IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
C
IC = 7.0A, TC =100°C
E
G
tSC 5µs, TJ(max) = 175°C
G
E
VCE(ON) typ. = 1.75V @ IC = 4.0A
n-channel
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
IRGR4607DPbF
D-Pak
G
Gate
Features
Low VCE(ON) and Switching Losses
5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Base part number
C
G
E
IRGS4607DPbF
D2Pak
E
C
G
IRGB4607DPbF
TO-220AB
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Package Type
IRGR4607DPbF
D-Pak
IRGS4607DPbF
D2Pak
IRGB4607DPbF
TO-220AB
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Orderable Part Number
IRGR4607DPbF
IRGR4607DTRPbF
IRGR4607DTRLPbF
IRGR4607DTRRPbF
IRGS4607DPBF
IRGS4607DTRRPbF
IRGS4607DTRLPbF
IRGB4607DPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
1
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Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
© 2014 International Rectifier
Max.
Units
600
11
7.0
12
16
8.0
5.0
16
±20
±30
58
29
-40 to +175
V
A
V
W
300 (0.063 in.
10 lbf·in (1.1 N·m)
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°C
November 14, 2014
IRGR/S/B4607DPbF
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case (IGBT)
Thermal Resistance, Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
Min.
–––
–––
–––
Typ.
–––
–––
0.50
Max.
2.6
8.3
–––
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)
–––
–––
50
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)
–––
–––
–––
–––
40
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
ICES
Collector-to-Emitter Leakage Current
IGES
Gate-to-Emitter Leakage Current
VF
Diode Forward Voltage Drop
2
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Min.
600
—
Typ.
—
0.52
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 100µA (25°C-175°C)
—
—
—
4.0
—
—
—
—
—
—
—
1.75
2.15
2.20
—
-19
2.2
0.50
100
—
1.7
1.5
2.05
IC = 4.0A, VGE = 15V, TJ = 25°C
V
—
IC = 4.0A, VGE = 15V, TJ = 150°C
—
IC = 4.0A, VGE = 15V, TJ = 175°C
6.5
V
VCE = VGE, IC = 100µA
—
mV/°C VCE = VGE, IC =100µA (25°C-175°C)
—
S
VCE = 50V, IC = 4.0A, PW = 20µs
25
µA VGE = 0V, VCE = 600V
—
VGE = 0V, VCE = 600V, TJ = 175°C
±100
nA VGE = ±20V
2.3
V
IF = 4.0A
—
IF = 4.0A, TJ = 175°C
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IRGR/S/B4607DPbF
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Min.
—
—
—
—
—
—
—
—
—
—
—
Typ.
9.0
3.0
4.0
140
62
202
27
15
120
10
220
Max
—
—
—
—
—
—
—
—
—
—
—
Units
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
92
312
24
27
81
14
250
20
7.1
—
—
—
—
—
—
—
—
—
µJ
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5
—
—
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
7.4
48
5.1
—
—
—
FULL SQUARE
nC
Conditions
IC = 4.0A
VGE = 15V
VCC = 300V
µJ IC = 4.0A, VCC = 400V, VGE = 15V
RG = 100, TJ = 25°C
ns
ns
Energy losses include tail & diode
reverse recovery
IC = 4.0A, VCC = 400V, VGE = 15V
RG = 100, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 16A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
µs V = +15V to 0V
GE
µJ
ns
A
TJ = 175°C
VCC = 400V, IF = 4.0A
VGE = 15V, Rg = 100
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
3
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IRGR/S/B4607DPbF
14
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 29W
Load Current ( A )
12
10
8
6
4
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
12
70
10
60
50
Ptot (W)
IC (A)
8
6
4
40
30
20
2
10
0
0
25
50
75
100
125
150
175
25
TC (°C)
50
75
100
125
150
175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
100
10
10µsec
100µsec
1msec
1
IC (A)
IC (A)
DC
10
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.01
1
10
100
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
4
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10
100
1000
V CE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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IRGR/S/B4607DPbF
16
16
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
8
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
12
ICE (A)
ICE (A)
12
4
8
4
0
0
0
2
4
6
8
10
0
2
4
V CE (V)
8
10
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
16
30
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
14
12
175°C
25°C
-40°C
25
20
IF (A)
10
ICE (A)
6
8
6
15
10
4
5
2
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
V CE (V)
6
3.0
3.5
4.0
6
5
5
ICE = 8.0A
ICE = 4.0A
4
ICE = 8.0A
ICE = 4.0A
4
ICE = 2.0A
V CE (V)
V CE (V)
2.5
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
3
ICE = 2.0A
3
2
2
1
1
0
0
5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
5
2.0
VF (V)
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5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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IRGR/S/B4607DPbF
16
6
ICE = 8.0A
ICE = 4.0A
5
ICE (A)
V CE (V)
12
ICE = 2.0A
4
TJ = 25°C
TJ = 175°C
3
8
2
4
1
0
0
5
10
15
4
20
6
8
10
12
14
16
18
V GE (V)
V GE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
1000
600
Swiching Time (ns)
500
Energy (µJ)
400
EON
300
EOFF
200
tdOFF
100
tdON
tR
100
tF
10
0
2
3
4
5
6
7
2
8
3
4
5
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V
7
8
9
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V
250
100
tdOFF
200
Swiching Time (ns)
EON
Energy (µJ)
6
IC (A)
150
100
EOFF
tdON
10
tF
tR
50
0
1
0
20
40
60
80
100
Rg ( )
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V
6
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0
20
40
60
80
100
RG ( )
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V
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IRGR/S/B4607DPbF
14
12
RG = 10
RG = 22
10
10
IRR (A)
IRR (A)
12
RG = 47
8
RG =
6
6
4
4
2
3
4
5
6
7
8
0
20
40
60
80
100
IF (A)
RG (
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
12
300
10
250
QRR (nC)
IRR (A)
8
8
10
8.0A
200
22
4.0A
47
6
150
100
2.0A
100
4
200
400
600
800
200
1000
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 4.0A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
25
120
25
RG = 10
20
100
Isc
Tsc
20
15
15
10
10
40
5
5
20
0
Time (µs)
80
RG = 47
60
Current (A)
Energy (µJ)
RG = 22
RG = 100
2
4
6
8
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
7
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0
9
10
11
12
13
14
15
16
V GE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
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IRGR/S/B4607DPbF
16
V GE, Gate-to-Emitter Voltage (V)
1000
Capacitance (pF)
Cies
100
Coes
10
Cres
V CES = 400V
14
V CES = 300V
12
10
8
6
4
2
1
0
0
100
200
300
400
500
600
0
2
V CE (V)
4
6
8
10
Q G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 4.0A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
C
4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Ri (°C/W)
i (sec)
0.269077
0.000044
0.909352
0.000062
0.901247
0.001172
0.520324
0.010981
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
100
10
D = 0.50
0.20
1
0.10
0.05
J
0.02
0.01
0.1
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
C
Ri (°C/W)
i (sec)
0.818307
0.000094
2.548997
0.000484
2.967111
0.000971
1.975585
0.017217
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGR/S/B4607DPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
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IRGR/S/B4607DPbF
600
500
10
400
8
80% ICE
4
200
10% VCE
100
300
Eoff Loss
-100
-0.3
0
0.3
6
200
4
90% ICE
100
2
10% VCE
0
0
8
TEST
CURRENT
10%ICE
2
10% ICE
10
400
VCE (V)
6
300
12
tr
500
ICE (A)
VCE (V)
tf
ICE (A)
12
600
0
-2
0
Eon Loss
-100
0.6
-0.3
time(µs)
0
-2
0.3
0.6
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
600
30
6
500
4
QRR
20
300
15
0
Peak
IRR
-4
-6
-0.10
ICE
200
10
100
5
0
0
-100
0.00
0.10
0.20
0.30
0.40
Ice (A)
Vce (V)
IF (A)
400
tRR
2
-2
25
VCE
-5
-5
0
5
10
time (µs)
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
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Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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IRGR/S/B4607DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
E X A M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E M B L Y
LO T C O D E 1234
ASSEM B LED O N W W 16, 1999
IN T H E A S S E M B L Y L IN E "A "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
PART N UM BER
IR F U 1 2 0
12
916A
34
ASSEM BLY
LO T C O D E
D ATE C O D E
YEAR 9 = 1999
W EEK 16
L IN E A
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4607DPbF
D-Pak (TO-252AA) Tape and Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4607DPbF
D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4607DPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM B LED O N W W 19, 2000
I N T H E A S S E M B L Y L IN E "C "
N o t e : "P " i n a s s e m b l y lin e p o s i t i o n
i n d i c a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEAR 0 = 2000
W EEK 19
L IN E C
TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
D-Pak
MSL1
2
Moisture Sensitivity Level
D Pak
MSL1
TO-220
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
7/9/2014
11/14/2014
Comments
Updated typo on V(BR)CES test condition from “250uA” to “100uA” on page 2.
Updated Package outline on pages 11, 13 & 15.
Added note to IFM Diode Maximum Forward Current VGE = 15V on page 1.
Removed note from switching losses test condition on page 3.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014
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