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IRGS4607DTRRPBF

IRGS4607DTRRPBF

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT404

  • 描述:

    IGBT 600V 11A 58W D2PAK

  • 数据手册
  • 价格&库存
IRGS4607DTRRPBF 数据手册
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C     C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ(max) = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding IRGR4607DPbF D-Pak G Gate   Features Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number C G E IRGS4607DPbF D2Pak E C G IRGB4607DPbF TO-220AB C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Package Type IRGR4607DPbF D-Pak IRGS4607DPbF D2Pak IRGB4607DPbF TO-220AB Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 50 Tape and Reel Right 800 Tape and Reel Left 800 Tube 50 Orderable Part Number IRGR4607DPbF IRGR4607DTRPbF IRGR4607DTRLPbF IRGR4607DTRRPbF IRGS4607DPBF IRGS4607DTRRPbF IRGS4607DTRLPbF IRGB4607DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG 1 www.irf.com Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw © 2014 International Rectifier Max. Units 600 11 7.0 12 16 8.0 5.0 16 ±20 ±30 58 29 -40 to +175 V A V W 300 (0.063 in. 10 lbf·in (1.1 N·m) Submit Datasheet Feedback °C November 14, 2014 IRGR/S/B4607DPbF   Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter Thermal Resistance, Junction-to-Case (IGBT)  Thermal Resistance, Junction-to-Case (Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) Min. ––– ––– ––– Typ. ––– ––– 0.50 Max. 2.6 8.3 ––– Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)  ––– ––– 50 Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak)  Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220) ––– ––– ––– ––– 40 62 Units   °C/W     Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance ICES Collector-to-Emitter Leakage Current IGES Gate-to-Emitter Leakage Current VF   Diode Forward Voltage Drop 2 www.irf.com   © 2014 International Rectifier Min. 600 — Typ. — 0.52 Max. — — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 100µA (25°C-175°C) — — — 4.0 — — — — — — — 1.75 2.15 2.20 — -19 2.2 0.50 100 — 1.7 1.5 2.05 IC = 4.0A, VGE = 15V, TJ = 25°C V — IC = 4.0A, VGE = 15V, TJ = 150°C —   IC = 4.0A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 100µA — mV/°C VCE = VGE, IC =100µA (25°C-175°C) — S VCE = 50V, IC = 4.0A, PW = 20µs 25 µA VGE = 0V, VCE = 600V — VGE = 0V, VCE = 600V, TJ = 175°C   ±100 nA VGE = ±20V 2.3 V IF = 4.0A — IF = 4.0A, TJ = 175°C Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Min. — — — — — — — — — — — Typ. 9.0 3.0 4.0 140 62 202 27 15 120 10 220 Max — — — — — — — — — — — Units Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — — — — — 92 312 24 27 81 14 250 20 7.1 — — — — — — — — — µJ  RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   5  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 7.4 48 5.1 — — — FULL SQUARE nC Conditions IC = 4.0A VGE = 15V VCC = 300V µJ   IC = 4.0A, VCC = 400V, VGE = 15V RG = 100, TJ = 25°C ns  ns Energy losses include tail & diode reverse recovery  IC = 4.0A, VCC = 400V, VGE = 15V RG = 100, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 16A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V VCC = 400V, Vp ≤ 600V µs   V = +15V to 0V GE µJ ns A TJ = 175°C VCC = 400V, IF = 4.0A VGE = 15V, Rg = 100 Notes:  VCC = 80% (VCES), VGE = 20V.  R is measured at TJ of approximately 90°C.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Pulse width limited by max. junction temperature.  Values influenced by parasitic L and C in measurement.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   14 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 29W Load Current ( A ) 12 10 8 6 4 2 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 12 70 10 60 50 Ptot (W) IC (A) 8 6 4 40 30 20 2 10 0 0 25 50 75 100 125 150 175 25 TC (°C) 50 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 100 10 10µsec 100µsec 1msec 1 IC (A) IC (A) DC 10 0.1 Tc = 25°C Tj = 175°C Single Pulse 1 0.01 1 10 100 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 4 www.irf.com © 2014 International Rectifier 10 100 1000 V CE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   16 16 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 8 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 12 ICE (A) ICE (A) 12 4 8 4 0 0 0 2 4 6 8 10 0 2 4 V CE (V) 8 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 16 30 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 14 12 175°C 25°C -40°C 25 20 IF (A) 10 ICE (A) 6 8 6 15 10 4 5 2 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 V CE (V) 6 3.0 3.5 4.0 6 5 5 ICE = 8.0A ICE = 4.0A 4 ICE = 8.0A ICE = 4.0A 4 ICE = 2.0A V CE (V) V CE (V) 2.5 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 3 ICE = 2.0A 3 2 2 1 1 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 5 2.0 VF (V) www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   16 6 ICE = 8.0A ICE = 4.0A 5 ICE (A) V CE (V) 12 ICE = 2.0A 4 TJ = 25°C TJ = 175°C 3 8 2 4 1 0 0 5 10 15 4 20 6 8 10 12 14 16 18 V GE (V) V GE (V) Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs Fig. 12 - Typical VCE vs. VGE TJ = 175°C 1000 600 Swiching Time (ns) 500 Energy (µJ) 400 EON 300 EOFF 200 tdOFF 100 tdON tR 100 tF 10 0 2 3 4 5 6 7 2 8 3 4 5 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V 7 8 9 Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V 250 100 tdOFF 200 Swiching Time (ns) EON Energy (µJ) 6 IC (A) 150 100 EOFF tdON 10 tF tR 50 0 1 0 20 40 60 80 100 Rg ( ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V 6 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 RG (  ) Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   14 12 RG = 10 RG = 22 10 10 IRR (A) IRR (A) 12 RG = 47 8 RG =  6 6 4 4 2 3 4 5 6 7 8 0 20 40 60 80 100 IF (A) RG (  Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 12 300 10 250 QRR (nC) IRR (A) 8 8 10 8.0A 200 22 4.0A 47 6 150 100 2.0A 100 4 200 400 600 800 200 1000 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 4.0A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 25 120 25 RG = 10 20 100 Isc Tsc 20 15 15 10 10 40 5 5 20 0 Time (µs) 80 RG = 47 60 Current (A) Energy (µJ) RG = 22 RG = 100 2 4 6 8 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C 7 www.irf.com © 2014 International Rectifier 0 9 10 11 12 13 14 15 16 V GE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   16 V GE, Gate-to-Emitter Voltage (V) 1000 Capacitance (pF) Cies 100 Coes 10 Cres V CES = 400V 14 V CES = 300V 12 10 8 6 4 2 1 0 0 100 200 300 400 500 600 0 2 V CE (V) 4 6 8 10 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 4.0A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 C 4 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Ri (°C/W) i (sec) 0.269077 0.000044 0.909352 0.000062 0.901247 0.001172 0.520324 0.010981 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 100 10 D = 0.50 0.20 1 0.10 0.05 J 0.02 0.01 0.1 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 C Ri (°C/W) i (sec) 0.818307 0.000094 2.548997 0.000484 2.967111 0.000971 1.975585 0.017217 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   600 500 10 400 8 80% ICE 4 200 10% VCE 100 300 Eoff Loss -100 -0.3 0 0.3 6 200 4 90% ICE 100 2 10% VCE 0 0 8 TEST CURRENT 10%ICE 2 10% ICE 10 400 VCE (V) 6 300 12 tr 500 ICE (A) VCE (V) tf ICE (A) 12 600 0 -2 0 Eon Loss -100 0.6 -0.3 time(µs) 0 -2 0.3 0.6 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 30 6 500 4 QRR 20 300 15 0 Peak IRR -4 -6 -0.10 ICE 200 10 100 5 0 0 -100 0.00 0.10 0.20 0.30 0.40 Ice (A) Vce (V) IF (A) 400 tRR 2 -2 25 VCE -5 -5 0 5 10 time (µs) time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 www.irf.com © 2014 International Rectifier Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information E X A M P L E : T H IS IS A N IR F R 1 2 0 W IT H A S S E M B L Y LO T C O D E 1234 ASSEM B LED O N W W 16, 1999 IN T H E A S S E M B L Y L IN E "A " IN T E R N A T IO N A L R E C T IF IE R LO G O PART N UM BER IR F U 1 2 0 12 916A 34 ASSEM BLY LO T C O D E D ATE C O D E YEAR 9 = 1999 W EEK 16 L IN E A Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   D-Pak (TO-252AA) Tape and Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   D2-PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 14 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM B LED O N W W 19, 2000 I N T H E A S S E M B L Y L IN E "C " N o t e : "P " i n a s s e m b l y lin e p o s i t i o n i n d i c a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEAR 0 = 2000 W EEK 19 L IN E C TO-220AB package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 15 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF   Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level   D-Pak MSL1 2 Moisture Sensitivity Level D Pak MSL1 TO-220 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 7/9/2014   11/14/2014  Comments  Updated typo on V(BR)CES test condition from “250uA” to “100uA” on page 2.  Updated Package outline on pages 11, 13 & 15. Added note  to IFM Diode Maximum Forward Current VGE = 15V on page 1. Removed note from switching losses test condition on page 3. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 16 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
IRGS4607DTRRPBF 价格&库存

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