IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 15A, TC =100°C
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 8A
G
G
E
Applications
n-channel
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
Gate
C
C
E
G
IRGS4715DPbF
D2‐Pak
IRGB4715DPbF
TO‐220AB
C
Collector
Features
E
Emitter
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
High Efficiency in a Wide Range of Applications
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
IRGB4715DPbF
TO-220
IRGS4715DPbF
D2-Pak
E
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
Units
V
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
A
V
W
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D2-Pak)
www.irf.com © 2014 International Rectifier
Min.
–––
–––
–––
–––
–––
Submit Datasheet Feedback
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
°C/W
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
Min.
650
—
Typ.
—
0.8
—
1.7
—
2.1
Gate Threshold Voltage
5.5
—
VGE(th)
—
-19
VGE(th)/TJ Threshold Voltage Temperature Coeff.
gfe
Forward Transconductance
—
5.7
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
1.0
Gate-to-Emitter Leakage Current
—
—
IGES
—
1.8
Diode Forward Voltage Drop
VF
—
1.3
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
2.0
V
IC = 8A, VGE = 15V, TJ = 25°C
—
IC = 8A, VGE = 15V, TJ = 175°C
7.4
V
VCE = VGE, IC = 250µA
—
mV/°C VCE = VGE, IC = 250µA (25°C-175°C)
—
S
VCE = 50V, IC = 8A, PW = 20µs
25
µA VGE = 0V, VCE = 650V
mA VGE = 0V, VCE = 650V, TJ = 175°C
—
±100
nA VGE = ±30V
2.8
V
IF = 8A
—
IF = 8A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
130
86
8
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
Typ. Max Units
Conditions
20
30
IC = 8A
6
9
nC VGE = 15V
VCC = 400V
8
12
200
310
90
180
µJ
IC = 8A, VCC = 400V, VGE=15V
290
490
RG = 50, TJ = 25°C
30
50
Energy losses include tail & diode
20
30
ns reverse recovery
100
120
20
30
340
—
170
510
30
20
120
70
540
50
15
—
—
—
—
—
—
—
—
—
FULL SQUARE
µJ
ns
IC = 8A, VCC = 400V, VGE=15V
RG = 50, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 32A
VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
µs V = +15V to 0V
GE
µJ
ns
A
TJ = 175°C
VCC = 400V, IF = 8A
VGE = 15V, Rg = 50
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
30
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
Load Current ( A )
25
20
15
Square Wave:
VCC
10
I
5
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
25
120
20
90
IC (A)
Ptot (W)
15
10
60
30
5
0
0
25
50
75
100
125
150
175
25
TC (°C)
50
75
100
125
150
175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
100
100
10µsec
10
IC (A)
IC (A)
100µsec
1msec
10
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
www.irf.com © 2013 International Rectifier
10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
32
32
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
24
ICE (A)
ICE (A)
24
16
8
16
8
0
0
0
2
4
6
8
10
0
2
4
10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
32
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
24
16
16
-40°C
25°C
175°C
8
8
0
0
0
2
4
6
8
10
0.0
0.5
1.0
V CE (V)
1.5
2.0
2.5
3.0
V F (V)
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
8
8
ICE = 4A
ICE = 8A
6
ICE = 16A
4
ICE = 16A
4
2
2
0
0
5
10
15
ICE = 4A
ICE = 8A
6
VCE (V)
VCE (V)
8
V CE (V)
24
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
6
V CE (V)
32
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
www.irf.com © 2013 International Rectifier
5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
8
32
ICE = 4A
ICE = 8A
24
ICE = 16A
ICE (A)
VCE (V)
6
TJ = 25°C
TJ = 175°C
4
16
2
8
0
0
5
10
15
20
6
7
8
9
10 11 12 13 14 15 16
V GE (V)
V GE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
1000
1000
600
Swiching Time (ns)
Energy (J)
800
EON
400
EOFF
tdOFF
100
tF
tdON
tR
10
200
0
1
0
2
4
6
8
10
12
14
16
0
2
4
6
8
IC (A)
10
12
14
16
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; VCE = 400V, RG = 50; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 50; VGE = 15V
1000
600
Swiching Time (ns)
500
Energy (J)
400
EON
300
200
EOFF
tdOFF
100
tF
tdON
tR
10
100
1
0
0
20
40
60
80
100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 8A; VGE = 15V
5
www.irf.com © 2013 International Rectifier
0
20
40
60
80
100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 8A; VGE = 15V
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
20
16
14
RG = 10
12
IRR (A)
IRR (A)
15
RG =22
10
RG = 50
8
RG = 100
5
10
6
0
4
2
4
6
8
10
12
14
0
20
40
IF (A)
60
80
100
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
15
1400
1200
12
16A
QRR (nC)
IRR (A)
1000
9
800
8A
600
6
4A
400
200
3
0
200
400
600
0
800
200
400
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
20
300
50
RG = 10
250
16
40
Isc
Time (µs)
Tsc
150
12
30
8
20
4
10
Current (A)
RG = 22
RG = 5
RG = 100
200
Energy (µJ)
600
100
50
0
0
0
2
4
6
8
10
12
14
16
18
0
9
10
11
6
www.irf.com © 2013 International Rectifier
13
14
15
16
VGE (V)
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
12
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
16
1000
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
Cies
100
Coes
10
Cres
14
VCES = 400V
VCES = 300V
12
10
8
6
4
2
0
1
0
100
200
300
400
500
0
600
5
10
15
20
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 8A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
J
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
C
4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Ri (°C/W)
i (sec)
0.04301
0.000008
0.47918
0.000100
0.59180
0.001347
0.38612
0.011340
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( ZthJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
J
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
1
2
2
3
3
4
4
Ci= iRi
Ci= iRi
0.01
1E-005
0.0001
i (sec)
0.04541
0.000011
1.07777
0.000254
1.68129
0.002170
0.79672
0.016960
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
www.irf.com © 2013 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
500
25
500
25
tr
tf
400
300
15
300
200
10
100
5
10% ICE
10% VCE
ICE (A)
VCE (V)
90% ICE
20
TEST
CURRENT
90% ICE
200
100
10%ICE
5
0
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-0.2
0.2
10
10% VCE
0
-0.6
15
ICE (A)
20
VCE (V)
400
0.6
-5
-0.3
1
-0.05
0.2
0.45
0.7
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
10
QRR
5
0
Vce (V)
IF (A)
80
VCE
-2.5
Peak
IRR
-10
-0.15
300
60
200
40
ICE
100
20
0
-7.5
0.05
0.25
0.45
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
400
tRR
2.5
-5
100
www.irf.com © 2013 International Rectifier
-100
-5.00
Ice (A)
7.5
500
0
0.00
5.00
-20
10.00
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level
TO-220
Moisture Sensitivity Level
N/A
2
D Pak
MSL1
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/12/2014
Comments
Added IFM Diode Maximum Forward Current = 32A with the note on page 1.
Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2014
工商网监
湘ICP备2023018690号
