IRL100HS121

IRL100HS121 Typical values (unless otherwise specified) Target Applications    Wireless charging Adapter Telecom Benefits       Higher power density designs Higher switching frequency Uses OptiMOSTM5 Chip Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reductions VDSS VGS RDS(on) (max.) 100V min. ± 20V max Qg tot Qgd 42m@ 10V Vgs(th) 3.7nC 1.6nC 1.7V Top View     6 D D 1 D 2 D S G 3 5 D 4 S PQFN 2 mm x 2 mm G Gate Base part number Package Type IRL100HS121 PQFN 2mm x 2mm Standard Pack Form Tape and Reel S Source Orderable Part Number Quantity 4000 IRL100HS121 100 120 110 ID = 6.7A 100 90 Typical RDS(on) (m ) RDS(on) , Drain-to -Source On Resistance (m  )   D Drain 80 T J = 125°C 70 60 50 T J = 25°C 40 VGS = 4.0V VGS = 4.5V VGS = 5.0V VGS = 6.0V VGS = 7.0V VGS = 10V 80 60 40 30 20 20 10 3 4 5 6 7 8 9 10 11 0 12 Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com 8 12 16 20 24 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Figure 1 4 Figure 2 Typical On-Resistance vs. Drain Current Please read the important Notice and Warnings at the end of this document V2.2 2019-12-13 IRL100HS121 Table of Contents Table of Contents Target Applications Benefits …..……..……..………………………………………………………………………...……1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………12 Qualification Information ……………………………………………………………………………………………14 Revision History …………………………………………………………………………………………..…………15 Final Datasheet 2 V2.2   2019-12-13 IRL100HS121 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 100 V RDS(on) max  42 m ID @ TC = 25°C 11 A ID @ TA = 25°C 5.1 A Final Datasheet 3 V2.2   2019-12-13 IRL100HS121 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ = 25°C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Silicon Limited) Continuous Drain Current (Silicon Limited) (Source Bonding Technologies Limited) Continuous Drain Current (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Maximum Power Dissipation Maximum Power Dissipation Gate-to-Source Voltage Peak Soldering Temperature Operating Junction and Storage Temperature Range Table 3 Thermal characteristics Parameter Symbol Junction-to-Case (Bottom)  RJC Junction-to-Case (Top)  RJC Junction-to-Ambient  RJA Junction-to-Ambient  RJA (