IRL3103D1STRL

PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS(on) = 0.014Ω G ID = 64A S Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 Pak T O -26 2 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10Vƒ Continuous Drain Current, VGS @ 10Vƒ Pulsed Drain Current ƒ Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 64 45 220 3.1 89 0.56 ± 16 -55 to + 150 Units A W W W/°C V °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 1.4 40 °C/W 4/2/98 IRL3103D1S MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 ––– ––– ––– 1.0 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.037 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 9.0 210 20 54 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance ––– ––– ––– ––– 1900 810 240 3500 V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mAƒ 0.014 VGS = 10V, ID = 34A ‚ Ω 0.019 VGS = 4.5V, ID = 28A ‚ ––– V VDS = VGS , ID = 250µA ––– S VDS = 25V, ID = 34Aƒ 0.10 VDS = 30V, VGS = 0V mA 22 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 16V nA -100 VGS = -16V 43 ID = 32A 14 nC VDS = 24V 23 VGS = 4.5V, See Fig. 6 ‚ ––– VDD = 15V ––– ID = 32A ns ––– RG = 3.4Ω, VGS =4.5V ––– RD = 0.43 Ω, ‚ƒ Between lead, ––– nH and center of die contact ––– VGS = 0V ––– VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 0V Body Diode & Schottky Diode Ratings and Characteristics Parameter IF (AV) ( Schottky) I SM Pulsed Source Current (Body Diode)  Diode Forward Voltage Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time VSD1 VSD2 trr Qrr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. ƒUses IRL3103D1 data and test conditions Min. Typ. Max. Units Conditions MOSFET symbol 2.0 ––– ––– showing the A integral reverse ––– ––– 220 p-n junction and Schottky diode. ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V ‚ ––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V ‚ ––– 51 77 ns TJ = 25°C, IF = 32A ––– 49 73 nC di/dt = 100A/µs ‚ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D G S ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRL3103D1S 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A ) TOP 100 10 2.5V 2 0µ s P U LS E W ID TH T J = 2 5°C 1 0.1 1 10 100 10 2.5V 20µs PULSE WIDTH T J = 150°C 1 A 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 30 VGS B 10V 8.0V 6.0V 4.0V 2.0V BOTTOM 0.0V VGS 10V 8.0V 6.0V 4.0V 2.0V BOTTOM 0.0V TOP I , Source-to-Drain Current (A) S I , Source-to-Drain Current (A) S TOP 20 10 0.0V 20µs PULSE WIDTH TJ = 25°C 0 0.0 0.2 0.4 0.6 A 100 V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 30 10 0.8 1.0 V S D , Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics A 20 10 0.0V 20µs PULSE WIDTH T J = 150°C 0 0 0.2 0.4 0.6 0.8 V S D , Source-to-Drain Voltage (V) Fig 4. Typical Reverse Output Characteristics A IRL3103D1S VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C, Capacitance (pF) 3000 Ciss 2000 Coss 1000 Crss 15 VGS , Gate-to-Source Voltage (V) 4000 ID = 32A V DS = 24V V DS = 15V 12 9 6 3 0 0 1 10 100 0 20 VDS , Drain-to-Source Voltage (V) 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 70 1000 I D , Drain-to-Source Current (A) 60 I D , Drain Current (A) 40 QG , Total Gate Charge (nC) 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 7. Maximum Drain Current Vs. Case Temperature 175 TJ = 25°C 100 T J = 150°C 10 V D S = 15V 20µs PULSE WIDTH 1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V G S , Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics 9.0 A IRL3103D1S R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) 2.0 I D = 56 A 1.5 1.0 0.5 V G S = 1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , J unc tion T em perature (°C ) Fig 9. Normalized On-Resistance Vs. Temperature Th erm al R es pon se (Z th J C ) 10 1 D = 0.50 0 .2 0 0 .1 0 0.1 PD M 0.0 5 t 0 .0 2 0 .0 1 t2 SING L E PU L SE (TH ER M A L RE S PO N SE ) 0.01 0.00001 1 N o te s: 1 . D u ty fa c to r D = t 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 t 1 , R e ctan gular Pulse D uration (se c) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case A 1 IRL3103D1S D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRL3103D1S Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 60.00 (2.3 62) MIN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/