IRL3103D2

PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS(on) = 0.014Ω G ID = 54A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 54 34 220 2.0 70 0.56 ± 16 -55 to + 150 Units A W W W/°C V 300 (1.6mm from case ) 10 lbf•in (1.1N•m) °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. Max. Units ––– ––– 1.8 62 °C/W 7/16/97 IRL3103D2 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 ––– ––– ––– 1.0 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– LS Internal Source Inductance ––– Ciss Coss Crss Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance ––– ––– ––– ––– V(BR)DSS IGSS Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = 250µA 0.037 ––– V/°C Reference to 25°C, ID = 1mAƒ ––– 0.014 VGS = 10V, ID = 32A ‚ Ω ––– 0.019 VGS = 4.5V, ID = 27A ‚ ––– ––– V VDS = V GS, ID = 250µA ––– ––– S V DS = 25V, ID = 34Aƒ ––– 0.25 VDS = 30V, VGS = 0V mA ––– 35 VDS = 24V, VGS = 0V, TJ = 125°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 44 ID = 32A ––– 14 nC VDS = 24V ––– 24 VGS = 4.5V, See Fig. 6 ‚ 9.0 ––– VDD = 15V 210 ––– ID = 34A ns 20 ––– RG = 3.4Ω, VGS =4.5V 54 ––– R D = 0.43 Ω, ‚ƒ Between lead, ––– 4.5 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 2300 ––– VGS = 0V 1100 ––– VDS = 25V pF 310 ––– ƒ = 1.0MHz, See Fig. 5 3500 ––– VGS = 0V, VDS = 0V D S Body Diode & Schottky Diode Ratings and Characteristics Parameter IF (AV) ( Schottky) ISM Pulsed Source Current (Body Diode)  Diode Forward Voltage Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time VSD1 VSD2 trr Qrr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. ƒ Uses IRL3103 data and test conditions Min. Typ. Max. Units Conditions MOSFET symbol 5.0 ––– ––– showing the A integral reverse ––– ––– 220 p-n junction and Schottky diode. ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V ‚ ––– ––– 0.6 V TJ = 25°C, IS = 3.0A, VGS = 0V ‚ ––– 51 77 ns TJ = 25°C, IF = 32A ––– 47 71 nC di/dt = 100A/µs ‚ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D G S IRL3103D2 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A ) TOP 100 10 2.5V 2 0µ s P U LS E W ID TH T J = 2 5°C 1 0.1 1 10 100 10 2.5V 20µs PULSE WIDTH T J = 150°C 1 A 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 30 IS, Source-to-Drain Current ( A ) IS, Source-to-Drain Current ( A ) 30 20 VG S 10V 8.0V 6.0V 4.0V 2.0V B O T T O M 0.0V TOP 0.0V 20µ s P U LS E W ID TH TC = 25°C 0 0.0 0.2 0.4 0.6 0.8 A 100 V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 10 A 1.0 V D S , D rain-to-S ource V oltage (V) Fig 3. Typical Reverse Output Characteristics VG S 10V 8.0V 6.0V 4.0V 2.0V B O T T O M 0.0V TOP 20 0.0V 10 20µ s P U LS E W ID TH TC = 150°C 0 0.0 0.2 0.4 0.6 A 0.8 V D S , D rain-to-S ource V oltage (V) Fig 4. Typical Reverse Output Characteristics IRL3103D2 V C C C 4000 GS iss rs s os s = = = = 15 0V , f = 1M H z C g s + C g d , C d s SH O R T E D C gd C ds + C gd VGS , Gate-to-Source Voltage (V) C, Capacitance ( pF ) 5000 3000 C iss C oss 2000 1000 C rss 0 10 VDS = 24V VDS = 15V 12 9 6 3 0 A 1 ID = 32A 0 100 20 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 I D , Drain-to-Source Current (A) 60 50 I D , Drain Current (A) 40 QG , Total Gate Charge (nC) V D S , D rain-to-S o urce V oltage (V ) 40 30 20 10 TJ = 25°C 100 T J = 150°C 10 V D S = 15V 20µs PULSE WIDTH 1 0 25 50 75 100 125 TC , Case Temperature ( ° C) Fig 7. Maximum Drain Current Vs. Case Temperature 150 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V G S , Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics 9.0 A IRL3103D2 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 54A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 9. Normalized On-Resistance Vs. Temperature Th erm al R es pon se (Z th J C ) 10 1 D = 0.50 0 .2 0 0 .1 0 0.1 PD M 0.0 5 t 0 .0 2 0 .0 1 t2 SING L E PU L SE (TH ER M A L RE S PO N SE ) 0.01 0.00001 1 N o te s: 1 . D u ty fa c to r D = t 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 t 1 , R e ctan gular Pulse D uration (se c) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case A 1 IRL3103D2 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A - -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 2.54 (.10 0) 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB : IS TH IS A ISN AIR N F1 IR0F1 E X AEMXPA LMEP :L ETH 1 00 1 0 W ITWH ITAHS SAESMS BE LMYB L Y C EO D9EB 19MB 1 M L O TL OCTO D A INRTE N A TIO IN TE N ARTIO N A LN A L E C IE TIFR IE R R E CRTIF IR F IR 10F110 0 10 L O GL O G O 9 2 4962 4 6 9B 9B1 M 1 M A S SAESMS BE LMYB L Y C EO D E L O TL O TC O D A NB U EMRB E R P A RPTA RNTU M D A TE C EO D E D A TE COD (Y Y(Y W YWW) W ) Y Y Y=Y Y=E AYRE A R W WW W = W= EW E KE E K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/