PD 9.1675B
IRL3202S
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
D
VDSS = 20V
RDS(on) = 0.016W
G
Description
ID = 48A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
48
30
190
69
0.56
± 10
14
A
W
W/°C
V
V
270
29
6.9
5.0
-55 to + 150
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RqJC
RqJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.8
40
°C/W
11/18/97
IRL3202S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min.
20
–––
–––
–––
0.70
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
IGSS
Typ.
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.8
100
63
82
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.019
VGS = 4.5V, ID = 29A
W
0.016
VGS = 7.0V, ID = 29A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 16V, ID = 29A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 10V, VGS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
43
ID = 29A
12
nC
VDS = 16V
13
VGS = 4.5V, See Fig. 6
–––
VDD = 10V
–––
ID = 29A
ns
–––
RG = 9.5W, VGS = 4.5V
–––
RD = 0.3W,
Between lead,
nH
7.5 –––
and center of die contact
2000 –––
VGS = 0V
800 –––
pF
VDS = 15V
290 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
48
––– –––
showing the
A
G
integral reverse
––– ––– 190
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
––– 68 100
ns
TJ = 25°C, IF = 29A
––– 130 190
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.64mH
RG = 25W , IAS = 29A.
ISD £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3202S
1000
1000
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
10
2.0V
1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
3
4
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1
10
100
Fig 2. Typical Output Characteristics
1000
2
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.0V
1
0.1
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
TOP
TOP
5
ID = 48A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3202S
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
3000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
15
VGS , Gate-to-Source Voltage (V)
3500
VDS = 16V
12
9
6
3
0
1
10
ID = 29A
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
100
100
TJ = 150 ° C
TJ = 25 ° C
10
1
0.2
100us
1ms
10
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.6
1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3202S
600
EAS , Single Pulse Avalanche Energy (mJ)
50
I D , Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
TOP
500
BOTTOM
ID
13A
18A
29A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.018
RDS(on), Drain-to-Source On Resistance ( W )
R DS (on) , Drain-to-Source On Resistance(W)
IRL3202S
VGS = 4.5V
0.016
0.014
VGS = 7.0V
0.012
0.010
0.025
0.020
ID = 48A
0.015
0.010
0
10
20
30
40
50
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
60
A
0.0
2.0
4.0
6.0
V G S , Gate-to-Source V oltage (V )
Fig 13. On-Resistance Vs. Gate Voltage
8.0
IRL3202S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200 )
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1 .39 (.055)
1 .14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.4 50)
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
A
PART NUMBER
F530S
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
2.54 (.100)
2X
IRL3202S
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 )
1 2.8 0 (.5 04 )
2 7.4 0 (1 .07 9)
2 3.9 0 (.9 41 )
4
330.00
(14.173)
M A X.
N O TES :
1. C O M F O R M S T O E IA -41 8 .
2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
6 0.0 0 (2 .3 6 2)
M IN .
26 .40 (1.039)
24 .40 (.961)
3
3 0.4 0 (1 .1 97 )
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
