PD-95660
IRL3302PbF
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Advanced Process Technology
Optimized for 4.5V Gate Drive
Ideal for CPU Core DC-DC Converters
150°C Operating Temperature
Fast Switching
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.020Ω
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
ID = 39A
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
39
25
160
57
0.45
± 10
14
Units
A
W
W/°C
V
V
130
23
5.7
5.0
-55 to + 150
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
2.2
62
°C/W
7/30/04
IRL3302PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
20
0.70
21
Typ.
0.022
7.2
110
41
89
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.023
VGS = 4.5V, ID = 23A
Ω
0.020
VGS = 7.0V, ID = 23A
V
VDS = VGS , ID = 250µA
S
VDS = 10V, ID = 23A
25
VDS = 20V, V GS = 0V
µA
250
VDS = 10V, V GS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
31
ID = 23A
5.7
nC VDS = 16V
13
VGS = 4.5V, See Fig. 6
VDD = 10V
ID = 23A
ns
RG = 9.5Ω, VGS = 4.5V
RD = 2.4Ω,
Between lead,
4.5
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
1300
VGS = 0V
520
pF
VDS = 15V
190
= 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
39
showing the
A
G
integral reverse
160
S
p-n junction diode.
1.3
V
TJ = 25°C, IS = 23A, VGS = 0V
62
94
ns
TJ = 25°C, IF = 23A
110 160
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 23A, di/dt ≤ 97A/µs, VDD ≤ V(BR)DSS,
Starting TJ = 25°C, L = 0.49mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
RG = 25Ω, IAS = 23A.
TJ ≤ 150°C
IRL3302PbF
1000
1000
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
6.0V
4.0V
4.0V
3.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
TOP
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
TOP
100
100
2.5V
2.5V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
3
4
5
6
7
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
2
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
8
ID = 39A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3302PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
Ciss
1200
800
Coss
400
Crss
0
1
10
ID = 23A
VDS = 16V
12
9
6
3
0
100
0
VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2000
15
VGS , Gate-to-Source Voltage (V)
2400
100
10us
100
TJ = 150 ° C
10
100us
1ms
10
TJ = 25 ° C
1
0.5
10ms
V GS = 0 V
1.0
1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.0
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3302PbF
40
EAS , Single Pulse Avalanche Energy (mJ)
300
I D , Drain Current (A)
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
TOP
250
BOTTOM
ID
10A
15A
23A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.022
RDS(on), Drain-to-Source On Resistance ( Ω )
R DS (on), Drain-to-Source On Resistance( Ω )
IRL3302PbF
VGS = 4.5V
0.021
0.020
0.019
0.018
VGS = 7.0V
0.017
0.016
0.020
0.019
0.018
0.017
0.016
I D = 39A
0.015
0.014
0
10
20
30
40
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
A
4
5
6
7
8
9
V GS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
10
IRL3302PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- EMITTER
3- SOURCE
4 - DRAIN
HEXFET
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E RNAT IONAL
RE CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PART NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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