PD - 94879
IRL3502PbF
HEXFET® Power MOSFET
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Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
Lead-Free
D
VDSS = 20V
RDS(on) = 0.007Ω
G
Description
ID = 110A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
110
67
420
140
1.1
± 10
14
Units
A
W
W/°C
V
V
390
64
14
5.0
-55 to + 150
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
0.89
62
°C/W
12/9/03
IRL3502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
20
0.70
77
Typ.
0.019
10
140
96
130
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.008
VGS = 4.5V, ID = 64A
Ω
0.007
VGS = 7.0V, ID = 64A
V
VDS = VGS , ID = 250µA
S
VDS = 10V, ID = 64A
25
VDS = 20V, V GS = 0V
µA
250
VDS = 10V, V GS = 0V, TJ = 150°C
100
VGS = -10V
nA
-100
VGS = 10V
110
ID = 64A
27
nC VDS = 16V
39
VGS = 4.5V, See Fig. 6
VDD = 10V
ID = 64A
ns
RG = 3.8Ω, VGS = 4.5V
RD = 0.15Ω,
Between lead,
4.5
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
4700
VGS = 0V
1900
pF
VDS = 15V
640
= 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
110
showing the
A
G
integral reverse
420
S
p-n junction diode.
1.3
V
TJ = 25°C, IS = 64A, VGS = 0V
87 130
ns
TJ = 25°C, IF = 64A
200 310
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 190µH
Calculated continuous current based on maximum allowable
max. junction temperature.
RG = 25Ω, IAS = 64A.
ISD ≤ 64A, di/dt ≤ 86A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3502PbF
1000
1000
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
2.25V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
2.25V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 15V
20µs PULSE WIDTH
4
5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
TOP
6
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3502PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
Ciss
4000
Coss
2000
Crss
0
1
10
15
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
VDS = 16V
12
9
6
3
0
100
ID = 64A
VDS , Drain-to-Source Voltage (V)
0
40
80
120
160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
I D , Drain Current (A)
10us
TJ = 150 ° C
TJ = 25 ° C
10
0.5
V GS = 0 V
1.0
100us
100
1.5
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
1ms
10
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3502PbF
120
EAS , Single Pulse Avalanche Energy (mJ)
800
LIMITED BY PACKAGE
I D , Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
TOP
BOTTOM
600
ID
29A
40A
64A
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.014
0.012
0.010
0.008
VGS = 4.5V
0.006
VGS = 7.0V
0.004
0
100
200
300
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
A
400
RDS (on) Drain-to-Source On Resistance ( Ω )
RDS (on) Drain-to-Source On Resistance ( Ω )
IRL3502PbF
0.010
0.008
I D = 64A
0.006
0.004
2.0
3.0
4.0
5.0
6.0
7.0
V GS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
8.0
A
IRL3502PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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