IRL3502S

PD -9.1676A IRL3502S PRELIMINARY HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS(on) = 0.007W G Description ID = 110A† S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 P ak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V… Continuous Drain Current, VGS @ 4.5V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 110† 67 420 140 1.1 ± 10 14 A W W/°C V V 390 64 14 5.0 -55 to + 150 mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 0.89 40 °C/W 11/18/97 IRL3502S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Min. 20 ––– ––– ––– 0.70 77 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LS Internal Source Inductance ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– IGSS Typ. ––– 0.019 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 140 96 130 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1.0mA… 0.008 VGS = 4.5V, ID = 64A „ W 0.007 VGS = 7.0V, ID = 64A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 64A… 25 VDS = 20V, VGS = 0V µA 250 VDS = 10V, VGS = 0V, TJ = 150°C 100 VGS = 10V nA -100 VGS = -10V 110 ID = 64A 27 nC VDS = 16V 39 VGS = 4.5V, See Fig. 6 „… ––– VDD = 10V ––– ID = 64A ns ––– RG = 3.8W, VGS = 4.5V ––– RD = 0.15W, „… Between lead, nH 7.5 ––– and center of die contact 4700 ––– VGS = 0V 1900 ––– pF VDS = 15V 640 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) … Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 110† showing the A G integral reverse ––– ––– 420 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V „ ––– 87 130 ns TJ = 25°C, IF = 64A ––– 200 310 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by „ Pulse width £ 300µs; duty cycle £ 2%. max. junction temperature. ‚ Starting TJ = 25°C, L = 190µH RG = 25W , IAS = 64A. … Uses IRL3502 data and test conditions ƒ ISD £ 64A, di/dt £ 86A/µs, VDD £ V(BR)DSS, TJ £ 150°C † Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. ` IRL3502S 1000 1000 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP TOP 100 100 2.25V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 2.25V 10 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 100 V DS = 15V 20µs PULSE WIDTH 3 4 5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 2 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20µs PULSE WIDTH TJ = 150 °C 6 ID = 110A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature IRL3502S 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 6000 Ciss 4000 Coss 2000 Crss 15 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0 1 10 ID = 64A VDS = 16V 12 9 6 3 0 100 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10us I D , Drain Current (A) C, Capacitance (pF) 8000 TJ = 150 ° C 100 100us 100 TJ = 25 ° C 10 0.5 V GS = 0 V 1.0 1.5 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 1 10ms 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRL3502S 120 EAS , Single Pulse Avalanche Energy (mJ) 800 LIMITED BY PACKAGE I D , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) TOP BOTTOM ID 29A 40A 64A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 0.014 RDS (on) Drain-to-Source On Resistance (W) RDS (on) Drain-to-Source On Resistance (W) IRL3502S 0.012 0.010 0.008 VG S = 4.5V 0.006 VG S = 7.0V 0.004 A 0 100 200 300 400 I D , D rain C urrent (A) Fig 12. On-Resistance Vs. Drain Current 0.010 0.008 I D = 64A 0.006 0.004 A 2.0 3.0 4.0 5.0 6.0 7.0 V G S , Gate-to-Source Voltage (V ) Fig 13. On-Resistance Vs. Gate Voltage 8.0 IRL3502S D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.4 9 (.610) 14.7 3 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.8 9 (.350) REF. 1.39 (.055) 1.14 (.045) B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X Part Marking Information D2Pak IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE A PART NUMBER F530S 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK 2.54 (.100) 2X IRL3502S Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4 330.00 (14.173) M A X. N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 6 0.0 0 (2 .3 6 2) M IN . 26 .40 (1.039) 24 .40 (.961) 3 3 0.4 0 (1 .1 97 ) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/