IRL3705NPbF
HEXFET® Power MOSFET
Logic - Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
D
G
S
Description
Fifth Generation HEXFETs utilize advanced
processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
Base part number
Package Type
IRL3705NPbF
TO-220
Absolute Maximum Ratings
Symbol
VDSS
55V
RDS(on) max.
0.01
ID
89A
S
D
G
TO-220AB
IRL3705NPbF
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
Orderable Part Number
50
IRL3705NPbF
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
89
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
63
310
170
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
1
S
Source
Units
A
1.1
± 16
340
46
17
5.0
-55 to + 175
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.50
–––
0.90
–––
62
°C/W
2018-05-25
IRL3705NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
Conditions
55
–––
–––
V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
VGS = 10V, ID = 46A
––– ––– 0.012 VGS = 5.0V, ID = 46A
––– ––– 0.018
VGS = 4.0V, ID = 39A
1.0
–––
2.0
V VDS = VGS, ID = 250µA
50
–––
–––
S VDS = 25V, ID = 46A
––– –––
25
VDS = 55V, VGS = 0V
µA
––– –––
250
VDS = 44V,VGS = 0V,TJ =150°C
––– –––
100
VGS = 16V
nA
––– ––– -100
VGS = -16V
––– –––
98
ID = 46A
nC VDS = 44V
––– –––
19
VGS = 5.0V , See Fig. 6 and 13
––– –––
49
–––
12
–––
VDD = 28V
––– 140
–––
ID = 46A
ns
–––
37
–––
RG= 1.8VGS = 5.0V
–––
78
–––
RD= 0.59See Fig. 10
LD
Internal Drain Inductance
–––
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source OnResistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
4.5
–––
nH
Internal Source Inductance
LS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
ton
Reverse Recovery Charge
Forward Turn-On Time
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
–––
7.5
–––
–––
–––
–––
3600
870
320
–––
–––
–––
Min.
Typ.
Max. Units
–––
–––
89
–––
–––
310
–––
–––
1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 46A,VGS = 0V
–––
94
140
ns
TJ = 25°C ,IF = 46A
pF
A
––– 290
440
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A.(See fig.12)
ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the
package refer to Design TIP # 93-4
.
2
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IRL3705NPbF
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
100
100
TJ = 175°C
10
V DS= 25V
20µs PULSE WIDTH
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
4.0
10
A
100
Fig. 2 Typical Output Characteristics
3.0
3.0
1
VDS , Drain-to-Source Voltage (V)
1000
1
20µs PULSE WIDTH
T J = 175°C
1
0.1
A
Fig. 1 Typical Output Characteristics
100
2.5V
10
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
TOP
8.0
A
I D = 77A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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IRL3705NPbF
6000
V GS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
4000
Coss
3000
2000
Crss
1000
0
1
10
100
I D = 46A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
60
80
100
120
140
A
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
40
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
100
TJ = 175°C
TJ = 25°C
10µs
100
100µs
1ms
10
10ms
VGS = 0V
10
0.4
0.8
1.2
1.6
2.0
2.4
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
20
A
2.8
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL3705NPbF
100
LIMITED BY PACKAGE
ID , Drain Current (A)
80
60
40
Fig 10a. Switching Time Test Circuit
20
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRL3705NPbF
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
10V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
800
TOP
BOTTOM
ID
19A
33A
46A
600
400
200
0
VDD = 25V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
A
175
Fig 13b. Gate Charge Test Circuit
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IRL3705NPbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
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IRL3705NPbF
TO-220 Package Outline (Dimensions are shown in millimeters (inches)
TO-220 Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
8
2018-05-25
IRL3705NPbF
Qualification Information
Industrial
(per JEDEC JESD47F)†
Qualification Level
N/A
TO-220
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
05/25/2018
Comments
Changed datasheet with Infineon logo - all pages.
Corrected TO-220 Package outline on page 8.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
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of
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Technologies, Infineon Technologies’ products
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personal injury.
2018-05-25
