IRL3705NSTRR

PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3705NS) l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET l D VDSS = 55V RDS(on) = 0.01Ω G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3705NL) is available for lowprofile applications. ID = 89A† S D 2 P ak T O -26 2 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 89† 63 310 3.8 170 1.1 ± 16 340 46 1.7 5.0 -55 to + 175 Units A W W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 0.90 40 °C/W 5/12/98 IRL3705NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– ––– ––– 1.0 50 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Typ. ––– 0.056 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 140 37 78 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA… 0.010 VGS = 10V, ID = 46A „ 0.012 Ω VGS = 5.0V, ID = 46A „ 0.018 VGS = 4.0V, ID = 39A „ 2.0 V VDS = VGS , ID = 250µA ––– S VDS = 25V, ID = 46A… 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 98 ID = 46A 19 nC VDS = 44V 49 VGS = 5.0V, See Fig. 6 and 13 „… ––– VDD = 28V ––– ID = 46A ns ––– RG = 1.8Ω, VGS = 5.0V ––– RD = 0.59Ω, See Fig. 10 „… Between lead, 7.5 ––– nH and center of die contact 3600 ––– VGS = 0V 870 ––– pF VDS = 25V 320 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 89† showing the A G integral reverse ––– ––– 310 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V „ ––– 94 140 ns TJ = 25°C, IF = 46A ––– 290 440 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 320µH RG = 25Ω, IAS = 46A. (See Figure 12) ƒ ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, … Uses IRL3705N data and test conditions † Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. TJ ≤ 175°C IRL3705NS/L 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V ID , Drain-to-Source Current (A ) ID , D rain-to-S ource C urrent (A ) 100 10 2.5V 2 0µ s P U LS E W ID T H T J = 2 5°C 1 0.1 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP TOP 1 10 100 2 .5V 10 2 0µ s P U LS E W ID TH T J = 1 75 °C 1 A 0.1 100 1 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 3.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D , D ra in -to-S ourc e C urrent (A) 1000 TJ = 2 5 °C T J = 1 7 5 °C 10 V D S= 2 5 V 2 0 µ s P U L S E W ID T H 1 2.0 3.0 4.0 5.0 6.0 7.0 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V ) 100 10 8.0 V G S , G a te -to -S o u rc e V o lta g e (V ) Fig 3. Typical Transfer Characteristics A I D = 7 7A 2.5 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature IRL3705NS/L V GS C iss C rs s C iss C o ss C , Capacitance (pF) 5000 = = = = 15 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S , G ate-to-S ource V oltage (V ) 6000 C oss 2000 C rss 1000 0 10 9 6 3 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 V D S = 44 V V D S = 28 V 12 4000 3000 I D = 46 A 0 100 V D S , D rain-to-S ourc e V oltage (V ) 40 60 80 100 120 A 140 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) I D , D rain Current (A ) I S D , Reverse D rain C urrent (A) 20 100 T J = 17 5°C T J = 2 5°C 10µ s 100 100µ s 1m s 10 10m s V G S = 0V 10 0.4 0.8 1.2 1.6 2.0 2.4 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.8 T C = 25 °C T J = 17 5°C S ing le P u lse 1 1 A 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area IRL3705NS/L 100 RD VDS LIMITED BY PACKAGE VGS 80 D.U.T. I D , Drain Current (A) RG + V - DD 60 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRL3705NS/L 1 5V D R IV E R L VD S D .U .T RG IA S 10V tp + - VD D A 0.0 1 Ω Fig 12a. Unclamped Inductive Test Circuit E A S , S ingle Pulse Avalanc he E nergy (m J) 800 TOP B O TT O M 600 400 200 0 V D D = 25 V 25 50 A 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 5.0 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 175 S tarting T J , J unc tion T em perature (°C ) V (B R )D SS tp ID 19 A 3 3A 46 A IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRL3705NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - V DD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRL3705NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRL3705NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRL3705NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 60.00 (2.3 62) MIN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/