IRL3715STRR

PD - 94194A IRL3715 IRL3715S IRL3715L SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS RDS(on) max ID 20V 14mΩ 54A† Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715 D2Pak IRL3715S TO-262 IRL3715L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 20 54† 38† 210 71 3.8 0.48 -55 to + 175 V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… ––– 0.50 ––– ––– 2.1 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 6/5/01 IRL3715/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 11 15 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 14 VGS = 10V, ID = 26A ƒ mΩ 20 VGS = 4.5V, ID = 21A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 11 3.8 4.4 11 6.4 73 12 5.1 1060 700 120 Max. Units Conditions ––– S VDS = 10V, ID = 21A 17 ID = 21A ––– nC VDS = 10V ––– VGS = 4.5V 17 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 21A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 110 21 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge Min. Typ. Max. Units ––– ––– 54† ––– ––– 210 ––– ––– ––– ––– ––– ––– 0.9 0.8 37 28 38 30 1.3 ––– 56 42 57 45 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 21A, VGS = 0V ƒ TJ = 125°C, IS = 21A, VGS = 0V ƒ TJ = 25°C, IF = 21A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 21A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRL3715/S/L 1000 1000 VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 2.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C V DS = 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 3.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.0 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 100 2.5V 10 8.0 ID = 52A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL3715/S/L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 14 VGS, Gate-to-Source Voltage (V) 10000 10 1 10 ID = 21A 12 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 5 15 20 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) TJ = 175 ° C ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 10 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.7 1.2 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 16V VDS = 10V 100µsec 10 1msec 1 2.2 10msec Tc = 25°C Tj = 175°C Single Pulse 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL3715/S/L 60 VDS RD LIMITED BY PACKAGE VGS 50 D.U.T. I D , Drain Current (A) RG + -VDD 40 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3715/S/L D R IV E R L VDS D .U .T RG + - VD D IA S 2V0GS V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 240 1 5V TOP 200 BOTTOM ID 8.5A 15A 21A 160 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL3715/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRL3715/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 3X L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE ASSEMBLY LINE "C" INT ERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE 8 PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com IRL3715/S/L D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L 9 IRL3715/S/L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE 10 PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com IRL3715/S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 ( .0 6 5 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. Notes: 6 0.0 0 (2.36 2) M IN . N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.  Repetitive rating; pulse width limited by max. junction temperature. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220A package ‚ Starting TJ = 25°C, L = 0.51mH RG = 25Ω, IAS = 21A,VGS=10V … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/