IRL3803PBF

IRMOSFET™ IRL3803PbF         Logic - Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D G S Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Base part number Package Type IRL3803PbF TO-220 30V RDS(on) max. 0.006 ID 140A TO-220AB IRL3803PbF G Gate D Drain Standard Pack Form Quantity Tube VDSS S Source Orderable Part Number 50 IRL3803PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140  ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 98  470 200 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 1.3 ± 16 610 71 20 5.0 -55 to + 175 Mounting torque, 6-32 or M3 screw. Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat, Greased Surface RJC Junction-to-Ambient RJA 1 Max. Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– Max. 0.75 ––– 62 Units °C/W Rev. 2.1, 2021-02-25 IRL3803PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source OnResistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance IGSS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.006 VGS = 10V, ID = 71A  ––– ––– 0.009 VGS = 4.5V, ID = 59A  1.0 ––– ––– V VDS = VGS, ID = 250µA 55 ––– ––– S VDS = 25V, ID = 71A ––– ––– 25 VDS = 30V, VGS = 0V µA ––– ––– 250 VDS = 24V,VGS = 0V,TJ =150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 140 ID = 71A ––– ––– 41 nC VDS = 24V ––– ––– 78 VGS = 4.5V , See Fig. 6 and 13 ––– 14 ––– VDD = 15V ––– 230 ––– ID = 71A ns ––– 29 ––– RG= 1.3 ––– 35 ––– RD= 0.2 See Fig. 10 Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package ––– 7.5 ––– and center of die contact ––– 5000 ––– VGS = 0V pF VDS = 25V ––– 1800 ––– ƒ = 1.0MHz, See Fig. 5 ––– 880 ––– Min. Typ. Max. Units ––– ––– 140 ––– ––– 470 ––– ––– 1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C,IS = 71A,VGS = 0V  ––– 120 180 ns TJ = 25°C ,IF = 71A A ––– 450 680 nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD) Notes:      Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) VDD = 15V, starting TJ = 25°C, L = 180H, RG = 25, IAS = 20A.(See Figure 12) ISD  71A, di/dt  130A/µs, VDD  V(BR)DSS, TJ  175°C. Pulse width  300µs; duty cycle  2%. Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 2 Rev. 2.1, 2021-02-25 IRL3803PbF 3 Fig. 1 Typical Output Characteristics TJ = 25°C Fig. 2 Typical Output Characteristics TJ = 175°C Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature Rev. 2.1, 2021-02-25 IRL3803PbF Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area Rev. 2.1, 2021-02-25 IRL3803PbF Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to-Case 5 Rev. 2.1, 2021-02-25 IRL3803PbF Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit Rev. 2.1, 2021-02-25 IRL3803PbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power 7 Rev. 2.1, 2021-02-25 IRL3803PbF TO-220Package Outline (Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to website at http://www.irf.com/packaging TO-220 Part Marking Information Note: For the most current drawing please refer to website at http://www.irf.com/packaging 8 Rev. 2.1, 2021-02-25 IRL3803PbF Revision History Date 02/25/2021 Rev. 2.1 Comments      Changed datasheet with Infineon logo - all pages. Updated datasheet based on IFX template. Removed “HEXFET® Power MOSFET” added “IR MOSFETTM “-page1 Corrected TO-220 Package outline on page 8. Added disclaimer on last page. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Rev. 2.1, 2021-02-25