IRL60SC216ARMA1

IRL60SC216 MOSFET StrongIRFETª D²-PAK7pin Features •VerylowRDS(on) •Optimizedforlogicleveldrive •Highcurrentcarryingcapability •175°Coperatingtemperature •Optimizedforbroadestavailabilityfromdistributionpartners Benefits •Reducedconductionlosses •Increasedpowerdensity •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21 Drain tab Productvalidation Gate Pin 1 QualifiedaccordingtoJEDECStandard Source Pin 2-7 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),typ 1.2 mΩ RDS(on),max 1.5 mΩ ID(SiliconLimited) 324 A QG(0V..10V) 174 nC Type/OrderingCode Package IRL60SC216 PG-TO263-7 Final Data Sheet Marking IRL60SC216 1 RelatedLinks - Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 324 229 A VGS=10V,TC=25°C VGS=10V,TC=100°C1) - 1296 A TC=25°C - - 531 mJ ID=100A,RGS=50Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 2.4 W TC=25°C TA=25°C,RTHJA=62°C/W3) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, 04) Values Min. Typ. Max. RthJC - - 0.4 °C/W - Thermal resistance, junction -Ambient, RthJA 0 - - 62 °C/W - RthCS - 0.5 - °C/W - Case-to-Sink, Flat Greased Surface 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: 4) RthJC is measured at TJ approximately 90°C. 2) Final Data Sheet 3 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=250uA 45 - mV/°C ID=5mA,referencedto25°C 1.0 - 2.4 V VDS=VGS,ID=250µA IDSS - - 1 150 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.2 1.4 1.50 1.8 mΩ VGS=10V,ID=100A VGS=4.5V,ID=50A Gate resistance1) RG - 2.0 - Ω - Transconductance gfs - 320 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. 60 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Ciss - 16000 - pF VGS=0V,VDS=30V,f=1MHz Coss - 1100 - pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 810 - pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 66 - ns VDD=30V,VGS=4.5V,ID=30A, RG,ext=2.7Ω Rise time tr - 149 - ns VDD=30V,VGS=4.5V,ID=30A, RG,ext=2.7Ω Turn-off delay time td(off) - 175 - ns VDD=30V,VGS=4.5V,ID=30A, RG,ext=2.7Ω Fall time tf - 90 - ns VDD=30V,VGS=4.5V,ID=30A, RG,ext=2.7Ω Input capacitance1) 1) Output capacitance 1) 1) Max. Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=30V,ID=100A,VGS=0to4.5V 26 - nC VDD=30V,ID=100A,VGS=0to4.5V - 78 - nC VDD=30V,ID=100A,VGS=0to4.5V Qsw - 95 - nC VDD=30V,ID=100A,VGS=0to4.5V Gate charge total Qg - 174 218 nC VDD=30V,ID=100A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=30V,ID=100A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 96 - nC VDS=0.1V,VGS=0to4.5V Output charge2) Qoss - 58 - nC VDD=30V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 43 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 313 A TC=25°C Diode pulse current IS,pulse - - 1296 A TC=25°C Diode forward voltage VSD - - 1.2 V VGS=0V,IF=100A,Tj=25°C trr - 40 - ns VR=51V,IF=100A,diF/dt=100A/µs Qrr - 52 - nC VR=51V,IF=100A,diF/dt=100A/µs Reverse recovery time2) 2) Reverse recovery charge 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 350 350 300 300 250 200 ID[A] Ptot[W] 250 200 150 150 100 100 50 50 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 10 10 µs 101 3 10 100 µs 100 ZthJC[K/W] ID[A] 102 1 ms 101 DC 10-1 10-1 10 ms 10-2 100 10-1 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 101 102 10-3 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1296 5.0 2.8 V 3V 3.8 V 4.5 V 5V 6V 10 V 15 V 1152 1008 4.0 3.5 RDS(on)[mΩ] ID[A] 864 4.5 720 576 3V 3.0 3.5 V 4V 4.5 V 2.5 432 2.0 288 1.5 5V 7V 144 0 1.0 0 1 2 3 4 0.5 5 10 V 0 300 600 900 VDS[V] 1200 1500 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1296 4.5 1152 4.0 1008 3.5 864 RDS(on)[mΩ] ID[A] 3.0 720 576 2.5 125 °C 2.0 432 1.5 288 0 25 °C 1.0 144 175 °C 25 °C 0 1 2 3 4 5 VGS[V] 2 4 6 8 10 12 14 16 18 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.5 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.5 4.0 2.0 1.5 VGS(th)[V] RDS(on)(normalizedto25°C) 3.0 1.0 2.0 2500 µA 250 µA 1.0 0.5 0.0 -60 -20 20 60 100 140 0.0 -75 180 -25 25 Tj[°C] 75 125 175 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 10 25 °C 175 °C 103 Ciss 4 IF[A] C[pF] 10 102 Coss 103 Crss 102 0 12 24 36 48 60 101 0.2 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 14 12 V 30 V 48 V 12 102 10 8 100 °C VGS[V] IAV[A] 25 °C 1 10 150 °C 6 4 100 2 10-1 10-1 100 101 102 103 104 tAV[µs] 0 0 50 100 150 200 250 300 350 400 450 Qgate[nC] IAS=f(tAV);RGS=50Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 72 70 VBR(DSS)[V] 68 66 64 62 -75 -25 25 75 125 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.2,2020-07-02 StrongIRFETª IRL60SC216 RevisionHistory IRL60SC216 Revision:2020-07-02,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2018-11-29 Release of preliminary version 2.0 2018-12-04 Release of final version 2.1 2019-05-08 Rev. 1 2.2 2020-07-02 Update from IR MOSFET/StrongIRFETTM to StrongIRFETTM Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.2,2020-07-02