StrongIRFET™
IRL6283MTRPbF
DirectFET® N-Channel Power MOSFET
Applications
•ORing, eFuse, and high current
load switch
•Load switch for battery
application
•Inverter switches for DC motor
application
Typical values (unless otherwise specified)
VDSS
VGS
20V max ±12V max
Vgs(th)
0.8V
RDS(on)
RDS(on)
0.50mΩ@10V 0.65mΩ@4.5V
S
Features and Benefits
•
Environmentally Friendly Product
•
RoHs compliant containing no Lead, no Bromide
and no Halogen
•
Very Low RDS(on)
S
S
D
RDS(on)
1.1mΩ@2.5V
D
S
G
DirectFET™ ISOMETRIC
MD
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MD
MP
MC
Description
The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base part number
Package Type
IRL6283MTRPbF
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRL6283MTRPbF
Absolute Maximum Ratings
Typical RDS(on) (mΩ)
2.0
ID = 38A
1.8
1.6
1.4
1.2
1.0
T J = 125°C
0.8
T J = 25°C
0.6
0.4
0
1
2
3
4
5
6
7
8
9
10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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VGS, Gate-to-Source Voltage (V)
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Max.
±12
38
30
211
305
406
30
14.0
Units
V
A
mJ
A
ID= 30A
12.0
VDS= 16V
VDS= 10V
10.0
8.0
VDS= 4.0V
6.0
4.0
2.0
0.0
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.88mH, RG = 50Ω, IAS = 30A.
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IRL6283MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Total Gate Charge
Qg
Qgs1
Pre-VthGate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Qgd
Gate Charge Overdrive
Qodr
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
Gate Resistance
RG
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Diode Characteristics
IGSS
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
20
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
320
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
4.8
0.50
0.65
1.1
0.8
-3.9
–––
–––
–––
–––
–––
105
9.7
8.9
35
51
44
50
1.1
23
160
116
192
8292
2012
1526
Max.
–––
–––
0.75
0.87
1.5
1.1
–––
1.0
150
100
-100
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 50A
mΩ VGS = 4.5V, ID = 50A
VGS = 2.5V, ID = 50A
V
VDS = VGS, ID = 100µA
mV/°C
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ=125°C
nA VGS = 12V
VGS = -12V
S
VDS = 10V, ID = 30A
Min.
–––
Typ.
–––
Max.
211
–––
–––
305
Units
Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
TJ = 25°C, IS = 30A, VGS = 0V
ns TJ = 25°C, IF = 30A,VDD = 10V
nC di/dt = 200A/µs
nC
nC
Ω
VDS = 10V
VGS = 4.5V
ID = 30A
VDS = 16V, VGS = 0V
ns
VDD = 20V, VGS = 4.5V
ID = 30A
RG = 1.8Ω
pF
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
D
G
S
–––
–––
–––
–––
48
84
1.2
72
126
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Absolute Maximum Ratings
Parameter
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Max.
2.1
1.3
63
270
-40 to + 150
Units
W
°C
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
1.97
–––
Units
°C/W
0.02
W/°C
Thermal Response ( Z thJA )
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Used double sided cooling , mounting pad with large heat sink.
3
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Mounted on minimum footprint full size board with metalized
back and with small clip heat sink.
Rθ is measured at TJ of approximately 90°C.
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IRL6283MTRPbF
1000
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
VGS
10V
4.5V
2.5V
2.25V
2.0V
1.8V
1.6V
1.4V
10
1.4V
≤60µs PULSE WIDTH
TOP
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
1.4V
10
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.01
0.1
1
10
1
100
0.01
VDS, Drain-to-Source Voltage (V)
1
10
100
Fig 5. Typical Output Characteristics
2.0
1000
ID = 38A
VDS = 15V
≤60µs PULSE WIDTH
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
0.1
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
T J = 150°C
T J = 25°C
10
T J = -40°C
1
V GS = 10V
V GS = 4.5V
1.5
1.0
0.5
0.1
0.4
0.8
1.2
1.6
2.0
-60 -40 -20 0
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
2.4
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
T J = 25°C
2.2
2.0
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
Ciss
10000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS
10V
4.5V
2.5V
2.25V
2.0V
1.8V
1.6V
1.4V
Coss
Crss
Vgs = 2.0V
Vgs = 2.5V
Vgs = 3.5V
Vgs = 4.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
1
10
100
VDS, Drain-to-Source Voltage (V)
0
40
80
120
160
200
ID, Drain Current (A)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current and Voltage
4
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IRL6283MTRPbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 150°C
T J = 25°C
T J = -40°C
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
100
10
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
1.2
Typical VGS(th) Gate threshold Voltage (V)
250
200
ID, Drain Current (A)
100µsec
150
100
50
0
1.0
0.8
ID = 100µA
0.6
0.4
0.2
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
2000
ID
1.8A
2.6A
BOTTOM 30A
TOP
1600
1200
800
400
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRL6283MTRPbF
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
6
A
0.01Ω
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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IRL6283MTRPbF
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
DirectFET® Board Footprint, MD Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
G
S
S
S
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRL6283MTRPbF
DirectFET® Outline Dimension, MD Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MAX
MIN
6.25 6.35
0.246 0.250
A
B
4.80 5.05
0.189 0.199
3.85 3.95
0.152 0.156
C
0.35 0.45
0.014 0.018
D
0.58 0.62
0.023 0.024
E
0.58 0.62
0.023
0.024
F
0.93 0.97
0.037 0.038
G
1.28 1.32
0.050 0.052
H
J
0.38 0.42
0.015 0.017
J1
1.08 1.12
0.043 0.044
K
0.88 0.92
0.035 0.036
2.08 2.12
0.082 0.083
L
0.535 0.595 0.021
0.023
M
R
0.02 0.08 0.0008 0.0031
P
0.08 0.17
0.003 0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRL6283MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRL6283MTRPBF). For 1000 parts on 7"
reel, order IRL6283MTR1PBF
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
MIN
MAX
MIN
CODE
MAX
MIN
MIN
MAX
MAX
6.9
12.992
A
N.C
330.0
N.C
177.77
N.C
N.C
0.75
0.795
B
N.C
20.2
N.C
19.06
N.C
N.C
0.53
0.504
C
0.50
12.8
13.5
0.520
13.2
12.8
0.059
D
0.059
N.C
1.5
1.5
N.C
N.C
N.C
2.31
E
3.937
100.0
N.C
58.72
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
18.4
13.50
G
0.47
0.488
12.4
11.9
N.C
0.567
14.4
12.01
H
0.47
0.469
11.9
11.9
N.C
0.606
15.4
12.01
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
MSL1
DirectFET
Moisture Sensitivity Level
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
2/4/2014
•
•
Converted the data sheet to StrongIRFET template.
Updated the schematic drawing, on page 1.
9/24/2014
•
Updated notes on page 2 & page 3
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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