IRLBD59N04ETRLP

PD -93910B IRLBD59N04E HEXFET® Power MOSFET





Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS(on) = 0.018Ω ID = 59A
Description The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET. Absolute Maximum Ratings 5 Lead-D2Pak Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt IG VESD TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt  VGS Clamp Current Electrostatic Votage Rating
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 59
41 230 130 0.89 ± 10 340 35 13 3.6 ± 50 ± 2.0 -55 to + 175 A W W/°C V mJ A mJ V/ns mA kV °C °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 1.12 40 °C/W 1 11/13/01 IRLBD59N04E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 ––– ––– ––– 1.0 10 29 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS gfs Gate Threshold Voltage Clamp Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– LS Internal Source Inductance ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– V(BR)DSS IGSS Typ. ––– 0.044 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.8 84 33 67 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.018 VGS = 10V, ID = 35A  Ω 0.021 VGS = 5.0V, ID = 30A  2.0 V VDS = V GS, ID = 250µA 20 V IGSS = 20µA ––– S VDS = 25V, ID = 35A 25 VDS = 40V, VGS = 0V µA 250 VDS = 32V, VGS = 0V, TJ = 150°C 1.0 VGS = 5.0V µA -1.0 VGS = -5.0V 50 ID = 35A 13 nC VDS = 32V 18 VGS = 5.0V, See Fig. 6 and 13  ––– VDD = 20V ––– ID = 35A ns ––– RG = 5.1Ω, ––– VGS = 5.0V, See Fig.10  Between lead, 2.0 ––– 6mm (0.25in.) nH G from package 5.0 ––– and center of die contact 2190 ––– VGS = 0V 670 ––– VDS = 25V 130 ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 59 showing the A G integral reverse ––– ––– 230 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V  ––– 57 86 ns TJ = 25°C, IF = 35A ––– 84 130 nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Sense Diode Rating VFM ∆VF/∆TJ 2 Parameter Sense Diode Maximum Voltage Drop Sense Diode Temperature Coefficient Min. Typ. Max. Units Conditions 675 ––– 725 mV IF = 250µA, TJ = 25°C -1.30 -1.40 -1.58 mV/°C IF = 250µA, (TJ = 25°C and 160°C) www.irf.com IRLBD59N04E 1000 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 300µs PULSE WIDTH T J = 25°C 1 0.1 1 10 100 2.7V 10 300µs PULSE WIDTH T J = 175°C 1 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 100 T J = 175°C VDS = 15V 300µs PULSE WIDTH 10 ID = 59A VGS = 10V 2.0 (Normalized) T J = 25°C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1.5 1.0 0.5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLBD59N04E VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED 6.0 ID= 35A C ds VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 100000 Crss = C gd Coss = Cds + Cgd 10000 Ciss 1000 Coss VDS= 32V VDS= 20V VDS= 8.0V 5.0 4.0 3.0 2.0 1.0 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0.0 100 1 10 0 100 10 20 30 40 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C 100 10.0 T J = 25°C 1.0 100µsec 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 1msec 10 3.0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLBD59N04E 60 50 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG 40 + -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 10 VDS 90% 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf (Z thJC) 10 1 Thermal Response D = 0.50 0.20 P DM 0.10 0.1 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t 2 J = P DM x Z thJC +T C 0.01 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLBD59N04E 800 15V ID TOP + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L VDS 14A 25A 35A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGD 0.8 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF Sense Diode Voltage Drop (V) QGS 0.7 0.6 IF = 250µA 0.5 .3µF D.U.T. + V - DS 0 VGS 25 50 75 100 125 150 175 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 0.4 Fig 14. Sense Diode Voltage Drop Vs.Temperature www.irf.com IRLBD59N04E Peak Diode Recovery dv/dt Test Circuit + D.U.T*
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer +  - -  +  • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRLBD59N04E Case Outline 5 Lead-D2Pak (SMD-220) PIN ASSIGNMENTS 1 2 3 4 5 - G - GATE - T1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )  Starting TJ = 25°C, L = 0.55mH RG = 25Ω, I AS = 35A. (See Figure 12)  Pulse width ≤ 400µs; duty cycle ≤ 2%.  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A
C = 100pF, R = 1.5kΩ
ISD ≤ 35A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/