IRLH5034TR2PBF

IRLH5034PbF HEXFET® Power MOSFET VDS 40 V R DS(on) max 3.2 mΩ Qg (typical) 43 nC RG (typical) 1.2 Ω (@VGS = 4.5V) ID (@Tmb = 25°C) h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features Low RDSon (≤3.2mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base part number Package Type IRLH5034PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRLH5034TRPBF Absolute Maximum Ratings VDS Parameter Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C PD @ Tmb = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range IDM PD @TA = 25°C g g Max. 40 c g ±16 29 23 100 100 h h 400 3.6 156 0.029 -55 to + 150 Units V A W W/°C °C Notes  through † are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5034PbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 130 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.0 2.7 ––– -6.4 ––– ––– ––– ––– ––– 82 43 8.1 5.0 24 5.9 29 31 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 2.4 VGS = 10V, ID = 50A mΩ VGS = 4.5V, ID = 50A 3.2 2.5 V VDS = VGS, ID = 150μA ––– mV/°C VDS = 40V, VGS = 0V 20 μA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 16V 100 nA -100 VGS = -16V ––– S VDS = 10V, ID = 50A ––– nC VGS = 10V, VDS = 20V, ID = 50A 65 ––– VDS = 20V ––– VGS = 4.5V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 21 54 31 21 4730 860 460 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 20V, VGS = 4.5V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM Units mJ A Max. 360 50 Min. Typ. Max. Units ––– ––– 100 ––– ––– 400 A c VSD trr Qrr ton Typ. ––– ––– d Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 400A/μs ––– ––– 1.3 V ––– 25 38 ns ––– 74 110 nC Time is dominated by parasitic Inductance e e Thermal Resistance Parameter Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient R θJC-mb R θJC (Top) R θJA f R θJA (