IRLH5036PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
60
V
5.5
mΩ
44
1.2
nC
Ω
h
100
A
PQFN 5X6 mm
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )
Low Thermal Resistance to PCB (< 0.8°C/W)
100% Rg tested
Low Profile (
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