IRLHS2242PbF
HEXFET® Power MOSFET
VDS
-20
V
VGS max
±12
V
RDS(on) max
31
mΩ
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
T OP VIEW
53
mΩ
9.6
nC
-8.5
i
D 1
D
6 D
D
D
D 2
D
5 D
D
S
G 3
G
4 S
D
S
S
2mm x 2mm PQFN
A
Applications
l
l
Charge and Discharge Switch for Battery Application
System/load switch
Features and Benefits
Features
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
⇒
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRLHS2242TRPbF
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
IRLHS2242TR2PbF
PQFN 2mm x 2mm
Tape and Reel
Note
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
-20
VGS
±12
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 4.5V
-5.8
-15
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 4.5V
-9.8
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 4.5V (Wirebond Limited)
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
c
PD @TC(Bottom) = 25°C
g
Power Dissipation g
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Units
V
-7.2
hi
hi
-8.5i
A
-34
2.1
g
W
9.6
0.02
-55 to + 150
W/°C
°C
Notes through are on page 9
1
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Submit Datasheet Feedback
December 16, 2013
IRLHS2242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-20
–––
–––
0.01
–––
–––
V VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
25
43
31
53
mΩ
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-0.4
–––
–––
-0.8
-3.8
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
10
–––
–––
-1.1
V
VDS = VGS, ID = -10μA
––– mV/°C
-1.0
VDS = -16V, VGS = 0V
μA
-150
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
–––
S VDS = -10V, ID = -8.5A
Total Gate Charge
–––
–––
–––
12
9.6
1.6
–––
–––
–––
–––
–––
3.7
4.3
–––
–––
Output Charge
–––
–––
4.8
6.8
–––
–––
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
17
7.9
54
–––
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
54
66
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
877
273
–––
–––
Crss
Reverse Transfer Capacitance
–––
182
–––
gfs
Qg
Qg
Qgs
Total Gate Charge
Gate-to-Source Charge
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Qsw
Qoss
nC
nC
VGS = -4.5V, ID = -8.5A
VGS = -2.5V, ID = -6.8A
e
e
VGS =-10V, VDS = -10V, ID = -8.5A
VDS = -10V
VGS = -4.5V
ID = -8.5A
nC
VDS = 16V, VGS = 0V
Ω
ns
pF
VDD = -10V, VGS = -4.5V
ID = -8.5A
RG = 2.0Ω
VGS = 0V
VDS = -10V
ƒ = 1.0KHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
c
Typ.
–––
–––
d
Max.
18
-8.5
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
h
D
–––
–––
-8.5
–––
-34
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.2
V
p-n junction diode.
TJ = 25°C, IS = -8.5A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
27
20
41
30
ns
nC
TJ = 25°C, IF = -8.5A, VDD = -10V
di/dt = 200A/μs
ton
Forward Turn-On Time
A
c
showing the
integral reverse
G
S
e
e
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (
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