IRLHS6242TR2PBF

IRLHS6242PbF HEXFET® Power MOSFET VDS 20 VGS ±12 V V RDS(on) max 11.7 mΩ (@VGS = 4.5V) RDS(on) max 15.5 (@VGS = 2.5V) ID (@TC (Bottom) = 25°C) 12 d T OP VIEW D 1 mΩ D 2 A G 3 6 D D S D D D 5 D D 4 S D S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 11.7mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRLHS6242TRPbF IRLHS6242TR2PbF PQFN 2mm x 2mm PQFN 2mm x 2mm results in ⇒ Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 EOL notice # 259 Max. Units Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage 20 VGS ±12 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V 8.3 22 ID @ TC(Bottom) = 70°C 10 i i d d 12d 18 IDM Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation ID @ TC(Bottom) = 25°C c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 88 1.98 g V 9.6 0.016 -55 to + 150 W W/°C °C Notes  through ‡ are on page 2 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 G IRLHS6242PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 6.8 9.4 ––– 11.7 Gate Threshold Voltage ––– 0.5 12.4 0.8 15.5 1.1 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– -4.2 ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Qgs Forward Transconductance 36 ––– ––– 14 ––– ––– S VDS = 10V, ID = 8.5A VDS = 10V Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time ––– ––– 1.5 6.3 ––– ––– nC Qgd VGS = 4.5V ID = 8.5A (See Fig.17 & 18) ––– ––– ––– 2.1 5.8 15 ––– ––– ––– Ω Turn-Off Delay Time Fall Time ––– ––– 19 13 ––– ––– Input Capacitance Output Capacitance ––– ––– 1110 260 ––– ––– Reverse Transfer Capacitance ––– 180 ––– Min. Typ. BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS h Total Gate Charge Gate-to-Source Charge RG td(on) tr td(off) tf Ciss Coss Crss h h Max. Units V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A mΩ VGS = 2.5V, ID = 8.5A V VDS = VGS, ID = 10μA mV/°C VDS = 16V, VGS = 0V μA VDS = 16V, VGS = 0V, TJ = 125°C ed ed nA ns pF VGS = 12V VGS = -12V d d VDD = 10V, VGS = 4.5V ID = 8.5A d e RG=1.8Ω See Fig.15 VGS = 0V VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– ––– c Reverse Recovery Time Reverse Recovery Charge Qrr ton ––– Forward Turn-On Time ––– Conditions MOSFET symbol 22 A (Body Diode) Diode Forward Voltage VSD trr Max. Units 88 ––– ––– 1.2 V ––– ––– 15 12 23 18 ns nC D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 8.5A , VGS = 0V d d TJ = 25°C, IF = 8.5A , V di/dt = 210A/μs e DD S e = 10V Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (