IRLHS6276TRPBF

IRLHS6276PbF HEXFET® Power MOSFET 20 V VGS ±12 V RDS(on) max 45 mΩ '  D1 D1  *  D2 6  A  ' d  ' 3.4 G1 S1 2mm x 2mm Dual PQFN 7 )( (@Tc(Bottom) = 25°C) mΩ  ' ID 62   * (@VGS = 2.5V) S2 G2 D2 7 )( RDS(on) max  6 (@VGS = 4.5V) : ,( 9 3 2 7 VDS Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 45mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRLHS6276TRPBF IRLHS6276TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm results in ⇒ Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 20 VGS Gate-to-Source Voltage ±12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.6 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range d d 9.6d 6.1d 3.4d V A 40 1.5 6.6 f Units 0.012 -55 to + 150 W W/°C °C Notes  through † are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 IRLHS6276PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 9.3 33 ––– 45 Gate Threshold Voltage ––– 0.5 46 0.8 62 1.1 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– -3.8 ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Qgs Forward Transconductance 8.8 ––– ––– 3.1 ––– ––– S VDS = 10V, ID = 3.4A VDS = 10V Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time ––– ––– 0.22 1.3 ––– ––– nC Qgd VGS = 4.5V ID = 3.4A (See Fig.17 & 18) ––– ––– ––– 4.0 4.4 9.3 ––– ––– ––– Ω Turn-Off Delay Time Fall Time ––– ––– 10 4.9 ––– ––– Input Capacitance Output Capacitance ––– ––– 310 79 ––– ––– Reverse Transfer Capacitance ––– 49 ––– Min. Typ. BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS h Total Gate Charge Gate-to-Source Charge RG td(on) tr td(off) tf Ciss Coss Crss h h Max. Units V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 3.4A mΩ VGS = 2.5V, ID = 3.4A V VDS = VGS, ID = 10µA mV/°C VDS = 16V, VGS = 0V µA VDS = 16V, VGS = 0V, TJ = 125°C ed ed nA ns pF VGS = 12V VGS = -12V d d VDD = 10V, VGS = 4.5V ID = 3.4A d RG=1.8Ω See Fig.15 VGS = 0V VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton ––– Max. Units d 9.6 ––– ––– 40 ––– ––– ––– 5.2 1.2 7.8 Conditions D MOSFET symbol A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 10V di/dt = 126A/µs ––– 5.0 7.5 nC Time is dominated by parasitic Inductance G e d d S e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (