IRLHS6342TR2PBF

IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 0.9 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRLHS6342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ±12 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 6.9 19 ID @ TC(Bottom)= 70°C Continuous Drain Current, VGS @ 10V 15 ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TA = 70°C TJ Linear Derating Factor Operating Junction and hi hi 12i TSTG Storage Temperature Range A 76 2.1 g V 8.7 c g Power Dissipation g Units 1.3 0.02 -55 to + 150 W W/°C °C Notes  through ‡ are on page 2 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6342PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 22 12.0 ––– 15.5 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 0.5 ––– 15.0 ––– -4.2 19.5 1.1 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 12V VGS = -12V gfs Qg Forward Transconductance Total Gate Charge Gate-to-Source Charge 39 ––– ––– ––– 11 0.5 ––– ––– ––– Gate-to-Drain Charge ––– 4.6 ––– Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 2.1 4.9 13 ––– ––– ––– Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 19 13 1019 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 97 70 ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Max. Units V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A mΩ VGS = 2.5V, ID = 8.5A V VDS = VGS, ID = 10μA mV/°C e e S VDS = 10V, ID = 8.5A VDS = 15V nC VGS = 4.5V ID = 8.5A (See Fig. 6 & 17) Ω ns pF VDD = 15V, VGS = 4.5V ID = 8.5A RG=1.8Ω See Fig.18 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c d Typ. ––– Max. 14 Units mJ ––– 8.5 A Diode Characteristics Parameter Min. IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– Max. Units i 12 ––– ––– 76 ––– ––– ––– 11 1.2 17 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 8.5A, VGS = 0V TJ = 25°C, IF = 8.5A, VDD = 15V di/dt = 300 A/μs ––– 13 20 nC Time is dominated by parasitic Inductance G e S e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (