IRLI3803

PD - 9.1320B IRLI3803 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 30V RDS(on) = 0.006Ω G ID = 76A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Max. Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚† Avalanche Current† Repetitive Avalanche Current Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Units 76 54 470 63 0.42 ±16 610 71 6.3 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units –––– –––– –––– –––– 2.4 65 °C/W 8/25/97 IRLI3803 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 ––– ––– ––– 1.0 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– LS Internal Source Inductance ––– Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance ––– ––– ––– ––– V(BR)DSS Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 230 29 35 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.006 VGS = 10V, ID = 40A „ Ω 0.009 VGS = 4.5V, ID = 34A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 25V, I D = 71A† 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, T J = 150°C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 „† ––– VDD = 15V ––– ID = 71A ns ––– RG = 1.3Ω, VGS = 4.5V ––– RD = 0.20Ω, See Fig. 10 „† Between lead, 4.5 ––– 6mm (0.25in.) nH from package 7.5 ––– and center of die contact 5000 ––– VGS = 0V 1800 ––– pF VDS = 25V 880 ––– ƒ = 1.0MHz, See Fig. 5† 12 ––– ƒ = 1.0MHz D G S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 76 ––– ––– 470 ––– ––– ––– ––– 120 450 1.3 180 680 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 40A, VGS = 0V „ TJ = 25°C, IF = 71A di/dt = 100A/µs „† D G S Notes:  Repetitive rating; pulse width limited by ƒ I SD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS , … t=60s, ƒ=60Hz max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C ‚ VDD = 15V, starting TJ = 25°C, L = 180µH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. † Uses IRL3803 data and test conditions RG = 25Ω, IAS = 71A. (See Figure 12) IRLI3803 10000 10000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.0V 1000 ID , D ra in -to -S o u rce C u rre n t (A ) ID , D ra in -to -S o u rce C u rre n t (A ) 1000 100 10 1 0.1 2.0 V 20 µ s PU LSE W ID TH T J = 2 5°C 0.01 0.1 1 10 A 100 10 0.1 0.1 100 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) T J = 2 5 °C TJ = 1 7 5 °C 10 1 0.1 V DS = 2 5 V 2 0µ s PU L SE W ID TH 4.0 5.0 6.0 7.0 8.0 V G S , G ate-to -S ource V olta ge (V ) 10 A 100 Fig 2. Typical Output Characteristics 2.0 3.0 1 V D S , Drain-to-S ource Voltage (V ) 1000 0.01 2 0µ s PU L SE W ID TH T J = 1 75 °C 0.01 Fig 1. Typical Output Characteristics 100 2.0V 1 V D S , Drain-to-Source V oltage (V ) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP TOP 9.0 A I D = 12 0A 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRLI3803 8000 V GS C iss C rs s C is s C os s 6000 C os s = = = = 15 0V , f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd V G S , G a te -to -S o u rce V o lta g e (V ) C , C a p a c ita n c e (p F ) 10000 4000 C rs s 2000 0 10 V DS = 24 V V DS = 15 V 12 9 6 3 FO R TEST CIR CU IT SEE FIG UR E 13 0 A 1 I D = 71A 0 100 V D S , D rain-to-S ource Voltage (V ) 80 120 160 A 200 Q G , T otal Gate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) 1 0µs I D , D ra in C u rre n t (A ) IS D , R e ve rs e D ra in C u rre n t (A ) 40 TJ = 17 5°C 100 TJ = 2 5°C 1 00µs 100 1 ms VG S = 0 V 10 0.4 0.8 1.2 1.6 2.0 2.4 2.8 V S D , Source-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 3.2 T C = 25 °C T J = 17 5°C S ing le Pulse 10 1 10 ms 10 V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area A 100 IRLI3803 80 VDS D.U.T. RG 60 + - VDD 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf 10 Thermal Response (Z thJC ) ID , Drain Current (A) VGS RD D = 0.50 1 0.20 0.10 PDM 0.05 0.1 t1 0.02 t2 0.01 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 IRLI3803 L VDS D.U.T. RG + - VDD IAS 4.5 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 1500 ID 2 9A 50A 71 A TO P BO TTOM 1200 900 600 300 0 V D D = 1 5V 25 50 A 75 100 125 150 Starting TJ , Junction T emperature (°C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 4.5 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 IRLI3803 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRLI3803 Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) ø 3.40 (.133 ) 3.10 (.123 ) 4.8 0 (.189) 4.6 0 (.181) -A 3.70 (.145) 3.20 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 1.15 (.04 5) M IN . N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 1 2 3 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B- 13 .7 0 (.540) 13 .5 0 (.530) C A 1.40 (.05 5) 3X 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) 3X M A M 0.48 (.019) 0.44 (.017) 2.85 (.112 ) 2.65 (.104 ) B 2 .54 (.100) 2X D B M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 FullPak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER PA RT NU MBE R IRF I840G LOGO E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/