PD- 95154
IRLL014NPbF
Surface Mount
Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
HEXFET® Power MOSFET
l
D
l
VDSS = 55V
RDS(on) = 0.14Ω
G
ID = 2.0A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
4/20/04
IRLL014NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
V GS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V (BR)DSS
I GSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
C iss
Coss
C rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
1.0
2.3
Typ.
0.015
9.5
1.1
3.0
5.1
4.9
14
2.9
230
66
30
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.14
VGS = 10V, ID = 2.0A
0.20
Ω
VGS = 5.0V, ID = 1.2A
0.28
VGS = 4.0V, ID = 1.0A
2.0
V
VDS = VGS, I D = 250µA
S
VDS = 25V, I D = 1.0A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
14
ID = 2.0A
1.7
nC
VDS = 44V
4.4
VGS = 10V, See Fig. 6 and 9
VDD = 28V
ID = 2.0A
ns
RG = 6.0Ω
RD = 14Ω, See Fig. 10
VGS = 0V
pF
VDS = 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
1.3
showing the
A
integral reverse
16
p-n junction diode.
1.0
V
TJ = 25°C, IS = 2.0A, VGS = 0V
41
61
ns
TJ = 25°C, I F = 2.0A
73 110
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
VDD = 25V, starting TJ = 25°C, L = 4.0mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
RG = 25Ω, I AS = 4.0A. (See Figure 12)
2
TJ ≤ 150°C
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IRLL014NPbF
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
1
0.1
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
20µs PULSE WIDTH
TJ = 25°C
A
1
10
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
100
0.1
1
V DS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
V DS = 25V
20µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
10
10
V DS, Drain-to-Source Voltage (V)
A
7.0
I D = 2.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLL014NPbF
Ciss
C, Capacitance (pF)
300
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS , Gate-to-Source Voltage (V)
400
I D = 2.0A
V DS = 44V
V DS = 28V
16
12
200
Coss
100
Crss
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
VDS , Drain-to-Source Voltage (V)
3
6
9
12
A
15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
TJ = 150°C
TJ = 25°C
1
10µs
10
100µs
1ms
1
10ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.6
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLL014NPbF
10V
QGS
RD
V DS
QG
VGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
t
1
t
0.01
1
Notes:
1. Duty factor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1
/t
2
2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10
100
A
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
15V
L
VDS
D.U.T
RG
IAS
10V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
E AS , Single Pulse Avalanche Energy (mJ)
IRLL014NPbF
80
TOP
BOTTOM
ID
1.8A
3.2A
4.0A
60
40
20
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRLL014NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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IRLL014NPbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
INT ERNAT IONAL
RECTIF IER
LOGO
PART NUMBE R
T OP
8
LOT CODE
FL014
314P
AXXXX
A = AS S EMBLY S IT E
DAT E CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DE S IGNATES LEAD-F REE
PRODUCT (OPTIONAL)
BOT TOM
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IRLL014NPbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
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9
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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