IRLL024NTRPbF
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor
phase, infra red, or wave soldering techniques. Its unique
package design allows for easy automatic pick-and-place as with
other SOT or SOIC packages but has the added advantage of
improved thermal performance due to an enlarged tab for heat
sinking. Power dissipation of 1.0W is possible in a typical surface
mount application.
Base Part Number
Package Type
IRLL024NTRPbF
SOT-223
Absolute Maximum Ratings
Symbol
VDSS
55V
RDS(on)
0.065
ID
3.1A
SOT-223
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tape and Reel
2500
Parameter
Orderable Part Number
IRLL024NTRPbF
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V **
4.4
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V *
Continuous Drain Current, VGS @ 10V *
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount) **
3.1
2.5
12
2.1
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount) *
Linear Derating Factor (PCB Mount) *
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy *
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
Parameter
S
Source
Units
A
1.0
8.3
± 16
120
3.1
0.1
5.0
-55 to + 150
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
90
50
120
60
°C/W
Junction-to-Ambient (PCB Mount, steady state) *
Junction-to-Ambient (PCB Mount, steady state) **
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRLL024NTRPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
IGSS
Min. Typ. Max. Units
Conditions
55
–––
–––
V VGS = 0V, ID = 250µA
––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.065
VGS = 10V, ID = 3.1A
––– ––– 0.080 VGS = 5.0V, ID = 2.5A
––– ––– 0.100
VGS = 4.0V, ID = 1.6A
1.0
–––
2.0
V VDS = VGS, ID = 250µA
3.3
–––
–––
S VDS = 25V, ID = 1.9A
––– –––
25
VDS = 55 V, VGS = 0V
µA
––– –––
250
VDS = 44V,VGS = 0V,TJ =125°C
––– –––
100
VGS = 16V
nA
––– ––– -100
VGS = -16V
––– 10.4 15.6
ID = 1.9A
nC VDS = 44V
–––
1.5
2.3
VGS = 5.0V , See Fig. 6 and 13
–––
5.5
8.3
–––
7.4
–––
VDD = 28V
–––
21
–––
ID = 1.9A
ns
–––
18
–––
RG= 24
–––
25
–––
RD= 15See Fig. 10
––– 510
–––
VGS = 0V
pF VDS = 25V
––– 140
–––
ƒ = 1.0MHz, See Fig. 5
–––
58
–––
Min.
Typ.
Max. Units
–––
–––
3.1
–––
–––
12
–––
–––
1.0
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 1.9A,VGS = 0V
A
trr
Reverse Recovery Time
–––
39
58
ns
TJ = 25°C ,IF = 1.9A
Qrr
Reverse Recovery Charge
–––
63
94
nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 25mH, RG = 25, IAS = 3.1A (See fig. 12)
ISD 1.9A, di/dt 270A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
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IRLL024NTRPbF
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
2.7V
TJ = 25 °C
TJ = 150 °C
10
V DS= 25V
20µs PULSE WIDTH
6
8
10
Fig. 3 Typical Transfer Characteristics
3
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
4
10
100
Fig. 2 Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
2
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
12
ID = 3.1A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature
( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2019-01-28
IRLL024NTRPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
Crss
0
1
10
15
VGS , Gate-to-Source Voltage (V)
1000
12
VDS = 44V
VDS = 27V
VDS = 11V
9
6
3
0
100
ID = 1.9A
FOR TEST CIRCUIT
SEE FIGURE 13
0
12
16
20
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
8
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
0.6
0.8
1.0
1.2
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
4
4
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.4
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLL024NTRPbF
ID , Drain Current (A)
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
t1
0.01
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL024NTRPbF
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
300
TOP
250
BOTTOM
ID
1.4A
2.5A
3.1A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRLL024NTRPbF
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
SOT-223(TO-261AA) Part Marking Information
FL014N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
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IRLL024NTRPbF
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
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2019-01-28
IRLL024NTRPbF
Qualification Information
Qualification Level
SOT-223
Moisture Sensitivity Level
RoHS Compliant
†
Industrial
(per JEDEC JESD47F) †
MSL1
(per JEDEC J-STD-020D) †
Yes
Applicable version of JEDEC standard at the time of product release (04/27/2004).
Revision History
Date
01/28/2019
Comments
Updated datasheet with corporate template.
Added disclaimer on last page.
Corrected part number from”IRLL024NPbF” to “IRLL024NTRPbF”-all pages
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
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Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
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of
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personal injury.
2019-01-28
