PD- 95223
IRLL3303PbF
Surface Mount
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
l Lead-Free
Description
HEXFET® Power MOSFET
l
D
VDSS = 30V
RDS(on) = 0.031Ω
G
ID = 4.6A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -22 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
6.5
4.6
3.7
37
2.1
1.0
8.3
± 16
140
4.6
0.10
1.3
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
93
48
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
04/27/04
IRLL3303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.0
5.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.034
–––
–––
–––
–––
–––
–––
–––
–––
34
4.4
10
7.2
22
33
28
840
340
170
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.031
VGS = 10V, ID = 4.6A
Ω
0.045
VGS = 4.5V, ID = 2.3A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 2.3A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 125°C
-100
VGS = -16V
nA
100
VGS = 16V
50
ID = 4.6A
6.5
nC
VDS = 24V
16
VGS = 10V, See Fig. 6 and 9
–––
VDD = 15V
–––
ID = 4.6A
ns
–––
R G = 6.2Ω
–––
R D = 3.2Ω, See Fig. 10
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
ISM
VSD
trr
Qrr
ton
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 0.91
showing the
A
integral reverse
––– –––
37
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 4.6A, VGS = 0V
––– 65
98
ns
TJ = 25°C, IF = 4.6A
––– 160 240
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Specification changes
Rev. #
1
1
Parameters
Old spec.
New spec.
VGS(th) (Max.)
VGS (Max.)
2.5V
±20
No spec.
±16
Comments
Removed V GS(th) (Max). Specification
Decrease VGS (Max). Specification
Revision Date
11/1/96
11/1/96
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 13mH
ISD ≤ 4.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.6A. (See Figure 12)
2
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IRLL3303PbF
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, D rain-to-Source C urrent (A )
I D , D rain-to-Source C urrent (A)
TO P
10
3 .0V
20 µ s P U LS E W ID TH
TJ = 2 5°C
A
1
0.1
1
10
3 .0V
2 0µ s P U L S E W ID TH
TJ = 15 0°C
A
1
10
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
TJ = 2 5 °C
TJ = 1 5 0 ° C
10
V DS= 10V
2 0 µ s P U L S E W ID T H
1
3.0
3.5
4.0
4.5
5.0
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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10
V D S, D rain-to-S ource V oltage (V )
5.5
A
I D = 4 .6A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLL3303PbF
20
1400
C , Capacitance (pF)
C iss
V GS
C iss
C rs s
C o ss
=
=
=
=
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-Source V oltage (V )
1600
1200
1000
C oss
800
600
C rss
400
I D = 4.6 A
V D S = 2 4V
V D S = 1 5V
16
12
8
4
200
0
A
1
10
F O R TE S T C IR C U IT
S E E F IG U R E 9
0
0
100
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
40
A
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , R everse Drain C urrent (A )
30
Q G , T otal G ate C harge (nC )
V D S , D rain-to-S ourc e V oltage (V )
10
TJ = 1 5 0°C
T J = 2 5°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
A
1.4
100µs
10
1m s
1
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
10m s
A
1
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRLL3303PbF
10V
VGS
QGS
RD
VDS
QG
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
T herm al R es pons e (Z th J A )
1000
100
D = 0 .5 0
0 .2 0
0 .1 0
10
0 .0 5
0 .02
0 .01
1
PD M
t
0.1
0.01
0.00001
1
t2
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N o te s :
1 . D u ty fac t or D = t
1
/t
2
2 . P e a k TJ = P D M x Z th J A + T A
0.0001
0.001
0.01
0.1
1
10
100
1000
A
10000
t 1 , R e cta n g u la r P u lse D u ra tio n (se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLL3303PbF
1 5V
L
VD S
D .U .T
RG
IA S
20V
tp
D R IV E R
+
- VD D
A
0 .01 Ω
Fig 12a. Unclamped Inductive Test Circuit
E A S , S ingle P ulse A valanche E nergy (m J)
350
TO P
300
B O TTO M
250
200
150
100
50
0
V D D = 15 V
25
V (B R )D SS
tp
ID
2.1 A
3.7A
4 .6 A
50
A
75
100
125
150
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6
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IRLL3303PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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7
IRLL3303PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRF L014
INT ERNATIONAL
RECTIF IER
LOGO
PART NUMBER
FL014
314P
TOP
8
LOT CODE
AXXXX
A = ASS EMBLY SITE
DAT E CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DES IGNATES LEAD-F REE
PRODUCT (OPT IONAL)
BOTT OM
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IRLL3303PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2 .0 5 (.0 8 0 )
1 .9 5 (.0 7 7 )
TR
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 4 )
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
1 6 .3 0 (.6 4 1 )
1 5 .7 0 (.6 1 9 )
7 .6 0 (.2 9 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
2 .3 0 (.0 9 0 )
2 .1 0 (.0 8 3 )
7 .1 0 (.2 7 9 )
6 .9 0 (.2 7 2 )
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S .
1 3 .2 0 (.5 1 9 )
1 2 .8 0 (.5 0 4 )
1 5 .40 (.6 0 7)
1 1 .90 (.4 6 9)
4
330.00
(13.000)
M AX.
NO TE S :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R ..
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
5 0.00 (1 .9 6 9 )
M IN .
1 4 .4 0 (.5 6 6 )
1 2 .4 0 (.4 8 8 )
3
1 8 .4 0 (.72 4 )
M AX .
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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9
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
