IRLML0030TRPBF

PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS(on) max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET® Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 5.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.3 IDM Pulsed Drain Current 21 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t