IRLML2060TRPBF

PD - 97448A IRLML2060TRPbF HEXFET® Power MOSFET VDS 60 V VGS Max ± 16 V RDS(on) max 480 m 640 m (@VGS = 10V) RDS(on) max (@VGS = 4.5V) *   ' 6  Micro3TM (SOT-23) IRLML2060TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 Multi-vendor compatibility results in Easier manufacturing  Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 60 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 1.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.93 IDM Pulsed Drain Current 4.8 PD @TA = 25°C Maximum Power Dissipation 1.25 PD @TA = 70°C Maximum Power Dissipation 0.80 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 16 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient e Junction-to-Ambient (t