IRLML9301TRPBF

PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS(on) max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET® Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 64mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Symbol VDS Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly ⇒ Increased reliability Parameter Max. Units -30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V -3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -2.9 IDM Pulsed Drain Current -15 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t