PD - 95762
IRLMS1503PbF
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low RDS(on)
N-Channel MOSFET
Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
A
D
D
1
6
D
2
5
D
G
3
4
S
VDSS = 30V
RDS(on) = 0.10Ω
Top View
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
3.2
2.6
18
1.7
13
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient
Min.
Typ.
Max
Units
75
°C/W
1
1/14/05
IRLMS1503PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V (BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
1.0
1.1
Typ.
0.037
6.4
1.1
1.9
4.6
4.4
10
2.0
210
90
32
Max. Units
Conditions
V
V GS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.100
V GS = 10V, ID = 2.2A
Ω
0.20
V GS = 4.5V, ID = 1.1A
V
V DS = V GS, ID = 250µA
S
V DS = 10V, I D = 1.1A
1.0
V DS = 24V, V GS = 0V
µA
25
V DS = 24V, VGS = 0V, TJ = 125°C
-100
V GS = -20V
nA
100
V GS = 20V
9.6
I D = 2.2A
1.7
nC V DS = 24V
2.8
V GS = 10V, See Fig. 6 and 9
V DD = 15V
I D = 2.2A
ns
R G = 6.0Ω
R D = 6.7Ω, See Fig. 10
V GS = 0V
pF
V DS = 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
1.7
18
36
39
1.2
54
58
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, I F = 2.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
2
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IRLMS1503PbF
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
3.0V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
1
3.0V
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
10
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
TOP
TOP
TJ = 25 ° C
10
TJ = 150 ° C
1
V DS = 10V
20µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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ID = 2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLMS1503PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
300
250
Ciss
200
Coss
150
100
Crss
50
VGS , Gate-to-Source Voltage (V)
20
350
1
10
VDS = 24V
VDS = 15V
16
12
8
4
0
0
ID = 2.2A
100
FOR TEST CIRCUIT
SEE FIGURE 9
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
8
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150 ° C
TJ = 25 ° C
1
10us
10
100us
1ms
1
10ms
0.1
0.4
TC = 25° C
TJ = 150° C
Single Pulse
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.6
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLMS1503PbF
VDS
QG
10V
QGS
VGS
QGD
RD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS1503PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-channel HEXFET® power MOSFET s
6
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IRLMS1503PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
6
5
LEAD ASSIGNMENTS
1
2
D
D
6
5
2X 0.95 (.0375 )
S
4
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
-A-
RECOMMENDED FOOTPRINT
-B-
3
0.95 ( .0375 )
6X
2X
4
1
2
3
D
D
G
2.20 (.087 )
0.50 (.019 )
0.35 (.014 )
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
6X
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
6 SURFACES
0.15 (.006 )
MAX.
0.20 (.007 )
0.09 (.004 )
0.60 (.023 )
0.10 (.004 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
T OP
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLMS1902
IRLMS 1503
IRLMS6702
IRLMS5703
IRLMS 6802
IRLMS4502
IRLMS2002
IRLMS6803
Note: A line above the work week
(as shown here) indicates Lead-Free.
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WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRLMS1503PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/05
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
