IRLMS6702TRPBF

PD - 95224 IRLMS6702PbF HEXFET® Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) P-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D D G 1 6 2 5 3 4 A D VDSS = -20V D RDS(on) = 0.20Ω S Top View The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6™ Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Units -2.4 -1.9 -13 1.7 13 ± 12 5.0 -55 to + 150 A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA www.irf.com Maximum Junction-to-Ambient „ Min. Typ. ––– ––– Max Units 75 °C/W 1 1/14/05 IRLMS6702PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.70 1.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = -250µA -0.005 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.200 V GS = -4.5V, ID = -1.6A ƒ Ω ––– 0.375 V GS = -2.7V, ID = -0.80A ƒ ––– ––– V V DS = V GS, ID = -250µA ––– ––– S V DS = -10V, I D = -0.80A ––– -1.0 V DS = -16V, V GS = 0V µA ––– -25 V DS = -16V, V GS = 0V, TJ = 125°C ––– -100 V GS = -12V nA ––– 100 V GS = 12V 5.8 8.8 I D = -1.6A 1.8 2.6 nC V DS = -16V 2.1 3.1 V GS = -4.5V, See Fig. 6 and 9 ƒ 13 ––– V DD = -10V 20 ––– I D = -1.6A ns 21 ––– R G = 6.0Ω 18 ––– R D = 6.1Ω, See Fig. 10 ƒ 210 ––– V GS = 0V 130 ––– pF V DS = -15V 73 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -1.7 ––– ––– -13 ––– ––– ––– ––– 25 15 -1.2 37 22 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V ƒ TJ = 25°C, I F = -1.6A di/dt = -100A/µs ƒ D S Notes:  Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ ISD ≤ -1.6A, di/dt ≤ -100A/µs, VDD ≤ V(BR)DSS, „ Surface mounted on FR-4 board, t ≤ 5sec. max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C 2 www.irf.com IRLMS6702PbF 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM -1.75V VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM -1.75V TOP -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -1.75V 20µs PULSE WIDTH TJ = 25°C A 0.1 0.1 1 10 1 -1.75V 20µs PULSE WIDTH TJ = 150°C 0.1 10 0.1 1 -VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 100 10 TJ = 25°C TJ = 150°C 1 VDS = -10V 20µs PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 10 A I D = -1.6A 1.5 1.0 0.5 V GS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLMS6702PbF 400 10 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) 300 Ciss Coss 200 Crss 100 0 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 9 0 A 1 I D = -1.6A VDS = -16V 0 100 6 8 A 10 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 4 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 A 1.4 10 100µs 1ms 1 10ms TA = 25°C TJ = 150°C Single Pulse 0.1 1 A 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLMS6702PbF RD V DS QG -4.5V QGS VGS D.U.T. RG QGD + VDD -4.5V VG Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. td(on) t d(off) tf VGS 50KΩ .2µF 12V tr 10% .3µF D.U.T. +VDS VGS 90% -3mA IG VDS ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS6702PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - + **  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS* * „ + - * VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 12. For P-channel HEXFET® power MOSFETs 6 www.irf.com IRLMS6702PbF Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) 2.80 (.111 ) 1.75 (.068 ) 1.50 (.060 ) 6 5 LEAD ASSIGNMENTS 1 2 D D 6 5 4 1 2 3 D D G 2X 0.95 (.0375 ) S 6X (1.06 (.042 ) 4 3.00 (.118 ) 2.60 (.103 ) -A- RECOMMENDED FOOTPRINT -B- 3 0.95 ( .0375 ) 6X 2X 2.20 (.087 ) 0.50 (.019 ) 0.35 (.014 ) 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S O O 0 -10 1.30 (.051 ) 0.90 (.036 ) 6X 1.45 (.057 ) 0.90 (.036 ) -C- 0.10 (.004 ) 6 SURFACES 0.15 (.006 ) MAX. 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP LOT CODE YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 PART NUMBER CODE REF ERENCE: A= B= C= D= E= F= G= H= IRLMS 1902 IRLMS1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS2002 IRLMS6803 Note: A line above the work week (as s hown here) indicates Lead-Free. www.irf.com WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LET TER YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 7 IRLMS6702PbF Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 8mm FEED DIRECTION 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information01/05 8 www.irf.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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