IRLR6225PBF

PD - 97594 IRLR6225PbF HEXFET® Power MOSFET VDS 20 V RDS(on) max 4.0 mΩ 5.2 mΩ Qg (typical) 48 nC RG (typical) 2.2 ID 42h Ω A (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) D D S G Applications G S D-Pak IRLR6225PbF G D S Gate Drain Source • Battery Protection Switch Features and Benefits Features Industry-Standard Pinout results in Compatible with Existing Surface Mount Techniques ⇒ RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRLR6225PbF IRLR6225TRPbF D-PAK D-PAK Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 75 2000 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @ TC = 100°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Soldering Temperature, for 10 seconds Max. 20 ±12 100 63 h h 400 63 25 0.5 -55 to + 150 Units V A W W/°C °C 300 (1.6mm from case) Notes  through † are on page 8 www.irf.com 1 11/15/2010 IRLR6225PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Output Charge Min. 20 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 205 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 6.6 3.2 4.2 0.8 -4.0 ––– ––– ––– ––– ––– 48 2.6 3.6 19 23 23 21 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1mA 4.0 VGS = 4.5V, ID = 21A mΩ 5.2 VGS = 2.5V, ID = 17A 1.1 V VDS = VGS, ID = 50µA ––– mV/°C 1.0 VDS = 16V, VGS = 0V µA 150 VDS = 16V, VGS = 0V, TJ = 125°C 100 VGS = 12V nA -100 VGS = -12V ––– S VDS = 10V, ID = 21A 72 ––– VDS = 10V ––– VGS = 4.5V nC ID = 17A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 2.2 9.7 37 63 52 3770 915 650 ––– ––– ––– ––– ––– ––– ––– ––– e e Ω ns pF VDD = 10V, VGS = 4.5V ID = 17A RG=1.8Ω See Fig.15 VGS = 0V VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c Typ. ––– ––– ––– d c Max. 170 17 6.3 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units h ––– ––– 100 c ––– ––– h 400 A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V TJ = 25°C, IF = 17A, VDD = 10V di/dt = 200A/µs ––– ––– 1.2 V ––– 35 53 ns ––– 57 86 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC RθJA RθJA 2 Parameter Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient f g g Typ. ––– ––– ––– Max. 2.0 50 110 Units °C/W www.irf.com IRLR6225PbF 1000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.5V 3.0V 2.3V 2.0V 1.8V 1.5V 100 100 1.5V BOTTOM 1.5V 10 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 10 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 10V ≤60µs PULSE WIDTH 0.1 0.0 1.0 2.0 3.0 4.0 ID = 42A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 5.0 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 17A C oss = C ds + C gd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 4.5V 3.5V 3.0V 2.3V 2.0V 1.8V 1.5V 12.0 VDS= 16V VDS= 10V 10.0 VDS= 4.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 25 50 75 100 125 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRLR6225PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec Limited by Package 10 10msec Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 DC 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.1 VGS(th) , Gate threshold Voltage (V) 100 Limited By Package 80 ID, Drain Current (A) 1msec 60 40 20 0 1.0 0.9 0.8 ID = 50µA 0.7 0.6 0.5 0.4 0.3 0.2 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 700 8 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to -Source On Resistance (mΩ) IRLR6225PbF ID = 17A 7 6 5 TJ = 125°C 4 3 TJ = 25°C 2 ID 5.9A 8.6A BOTTOM 17A 600 TOP 500 400 300 200 100 0 1 0 2 4 6 8 10 12 14 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01Ω tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRLR6225PbF D.U.T Driver Gate Drive ƒ + ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRLR6225PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 3$57180%(5 :,7+$66(0%/< ,17(51$7,21$/ /27&2'( ,5)5 $   5(&7,),(5 $66(0%/('21:: /2*2 ,17+($66(0%/