IRLR8726TRLPBF

PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET® Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use : Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant G D S G D-Pak IRLR8726PbF D S I-Pak IRLU8726PbF G D S Gate Drain Source Absolute Maximum Ratings Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Parameter 30 ± 20 86 V 61 A IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current VDS VGS ID @ TC = 25°C ID @ TC = 100°C c PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range f f 340 h h W 75 38 W/°C °C 0.5 -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter h RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient h gh Typ. Max. ––– 2.0 ––– 50 ––– 110 Units °C/W Notes  through † are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/23/09 IRLR/U8726PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance 30 V ––– ––– 20 ––– ––– 4.0 5.8 mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A ––– 5.8 8.0 VGS = 4.5V, ID = 20A Gate Threshold Voltage 1.35 1.80 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -8.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 73 ––– ––– Qg Total Gate Charge ––– 15 23 VGS = 0V, ID = 250µA e e VGS(th) IGSS Conditions ––– VDS = VGS, ID = 50µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 20A VDS = 15V Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– Qgd Gate-to-Drain Charge ––– 5.7 ––– ID = 20A Qgodr Gate Charge Overdrive ––– 3.7 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 7.6 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– 2.0 3.5 Ω td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 49 ––– td(off) Turn-Off Delay Time ––– 15 ––– ID = 20A RG = 1.8Ω tf Fall Time ––– 16 ––– See Fig. 13 Ciss Input Capacitance ––– 2150 ––– VGS = 0V Coss Output Capacitance ––– 480 ––– Crss Reverse Transfer Capacitance ––– 205 ––– nC ns pF VGS = 4.5V VDS = 15V, VGS = 0V e VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 120 mJ ––– 20 A Diode Characteristics Parameter Min. Typ. Max. Units f Conditions IS Continuous Source Current ––– ––– 86 ISM (Body Diode) Pulsed Source Current ––– ––– 340 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 24 36 ns TJ = 25°C, IF = 20A, VDD = 15V Qrr Reverse Recovery Charge ––– 52 78 nC di/dt = 300A/µs 2 c MOSFET symbol A showing the integral reverse e e www.irf.com IRLR/U8726PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 100 BOTTOM 10 2.5V ≤ 60µs PULSE WIDTH Tj = 175°C 2.5V 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V 100 10 TJ = 175°C TJ = 25°C 1 VDS = 15V ≤ 60µs PULSE WIDTH 0.1 0.0 2.0 4.0 6.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 ID = 25A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLR/U8726PbF 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss Crss ID= 20A VDS= 24V VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175°C 100 10 12 16 20 24 28 32 36 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 100 1msec 10msec 10 1 VGS = 0V TC= 25°C TJ = 175°C Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 2.0 0.1 1 10 100 VDS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U8726PbF 100 2.5 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 ID = 500µA ID = 50µA ID = 25µA 2.0 1.5 1.0 0.5 175 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 τJ 0.01 R1 R1 τJ τ1 R2 R2 R4 R4 τC τ1 τ2 τ2 Ci= τi/Ri Ci i/Ri 0.01 R3 R3 SINGLE PULSE ( THERMAL RESPONSE ) τ3 τ3 τ4 τ4 τ Ri (°C/W) τι (sec) 0.014297 0.000003 0.373312 0.00009 1.010326 0.000973 0.602065 0.007272 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 EAS, Single Pulse Avalanche Energy (mJ) IRLR/U8726PbF 500 I D 5.6A 8.2A BOTTOM 20A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS 15V D.U.T RG 20V VGS DRIVER L VDS tp + V - DD IAS tp A 0.01Ω I AS Fig 12b. Unclamped Inductive Test Circuit V DS VGS RG RD VDS 90% D.U.T. + -VDD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 13a. Switching Time Test Circuit 6 Fig 12c. Unclamped Inductive Waveforms 10% VGS td(on) tr t d(off) tf Fig 13b. Switching Time Waveforms www.irf.com IRLR/U8726PbF Driver Gate Drive D.U.T P.W. + ƒ + - -  * RG • • • • „ *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD ** P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 20K 1K VCC Vgs(th) S Qgodr Fig 15. Gate Charge Test Circuit www.irf.com Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 7 IRLR/U8726PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 3$57180%(5 :,7+$66(0%/< ,17(51$7,21$/ /27&2'( ,5)5 $   5(&7,),(5 $66(0%/('21:: /2*2 ,17+($66(0%/