IRLS3813PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
D
ID (Silicon Limited)
30V
1.60m
1.95m
247A
ID (Package Limited)
160A
RDS(on) typ.
max
G
S
D
S
G
Benefits
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Base part number
D2-Pak
IRLS3813PbF
G
D
S
Gate
Drain
Source
Standard Pack
Package Type
IRLS3813PbF
D2Pak
Form
Quantity
Tube
Tape and Reel Left
50
800
Orderable Part Number
IRLS3813PbF
IRLS3813TRLPbF
Absolute Maximum Rating
Symbol
VDS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
Symbol
Parameter
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient (PCB Mount)
RJA
TSTG
1
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Max.
30
247
156
160
850
195
1.6
± 20
Units
V
A
W
W/°C
V
-55 to + 150
°C
300
Max.
177
148
Typ.
–––
–––
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Units
mJ
A
Max.
0.64
40
Units
°C/W
January 23, 2014
IRLS3813PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
Min.
Typ. Max. Units
–––
–––
–––
–––
1.35
23
1.60
–––
––– mV/°C Reference to 25°C, ID = 1mA
1.95
m VGS = 10V, ID = 148A
2.35
V
VDS = VGS, ID = 150µA
–––
–––
1
–––
–––
–––
–––
–––
–––
–––
0.9
100
100
-100
–––
V
Conditions
30
µA
nA
VGS = 0V, ID = 250µA
VDS =30V, VGS = 0V
VDS =30V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
428
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
55
28
11
32
202
33
102
8020
1250
570
–––
83
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1560
–––
VDS = 10V, ID =148A
ID = 148A
nC VDS = 15V
VGS = 4.5V
VDD = 20V
ID = 148A
ns
RG= 4.5
VGS = 4.5V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Coss eff.(TR)
Output Capacitance (Time Related)
–––
1750
–––
VGS = 0V, VDS = 0V to 24V
Min.
Typ.
Max. Units
–––
–––
247
–––
–––
850
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
S
A
VSD
Diode Forward Voltage
–––
–––
1.3
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
–––
–––
2.2
32
–––
–––
Qrr
Reverse Recovery Charge
–––
–––
–––
33
24
26
–––
–––
–––
IRRM
Reverse Recovery Current
–––
1.2
–––
V
TJ= 25°C,IS = 148A,VGS = 0V
V/ns TJ = 150°C,IS =148A,VDS = 30V
ns
nC
A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 26V
IF = 148A,
di/dt = 100A/µs
TJ = 25°C
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source
bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 16µH, RG = 50, IAS = 148A, VGS =10V.
ISD 148A, di/dt 865A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Pulse drain current is limited at 640A by source bonding technology.
2
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January 23, 2014
IRLS3813PbF
1000
1000
100
BOTTOM
10
2.5V
BOTTOM
100
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
10
Fig 2. Typical Output Characteristics
1000
TJ = 150°C
100
TJ = 25°C
10
VDS = 15V
60µs PULSE WIDTH
ID = 148A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
1.0
1
2
3
4
5
6
-60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
ID= 148A
Coss = Cds + Cgd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
100
12
VDS = 24V
10
VDS = 15V
8
6
4
2
0
0.1
1
10
100
0
VDS , Drain-to-Source Voltage (V)
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40
80
120
160
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRLS3813PbF
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150°C
100
TJ = 25°C
10
1
VGS = 0V
0.4
0.8
1.2
1.6
100
1msec
10
1
Limited by Package
0.1
2.0
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
280
Limited by Package
ID, Drain Current (A)
240
200
160
120
80
40
0
75
100
1
125
36
Id = 1.0mA
35
34
33
32
31
30
-60 -40 -20 0
150
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
800
EAS , Single Pulse Avalanche Energy (mJ)
0.6
0.5
0.4
Energy (µJ)
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
TC , Case Temperature (°C)
0.3
0.2
0.1
ID
17A
38A
BOTTOM 148A
TOP
600
400
200
0
0.0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy
4
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
50
10msec
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
25
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
0.0
100µsec
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30
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. Drain Current
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IRLS3813PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Current vs. pulse Width
5
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IRLS3813PbF
RDS(on), Drain-to -Source On Resistance (m)
6
3.0
VGS(th), Gate threshold Voltage (V)
ID = 148A
5
4
3
TJ = 125°C
2
1
TJ = 25°C
2.5
2.0
ID = 150µA
ID = 250µA
1.5
ID = 1.0mA
ID = 1A
1.0
0
0.5
2
4
6
8
10
12
14
16
18
20
-75 -50 -25
VGS, Gate -to -Source Voltage (V)
Fig 15. Typical On-Resistance vs. Gate Voltage
75 100 125 150
IF = 148A
VR = 26V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
4
IRRM (A)
4
3
3
2
2
1
1
0
100
200
300
400
500
600
0
100
200
diF /dt (A/µs)
300
400
500
600
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Typical Recovery Current vs. dif/dt
90
140
120
IF = 99A
VR = 26V
80
70
100
TJ = 25°C
TJ = 125°C
QRR (nC)
QRR (nC)
50
5
IF = 99A
VR = 26V
5
80
60
IF = 148A
VR = 26V
TJ = 25°C
TJ = 125°C
60
50
40
40
30
20
20
0
100
200
300
400
500
600
0
100
Fig 19. Typical Stored Charge vs. dif/dt
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200
300
400
500
600
diF /dt (A/µs)
diF /dt (A/µs)
6
25
Fig 16. Threshold Voltage vs. Temperature
6
IRRM (A)
0
TJ , Temperature ( °C )
Fig 20. Typical Stored Charge vs. dif/dt
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IRLS3813PbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
VD
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
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Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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IRLS3813PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLS3813PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level
D2Pak
MSL1
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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