IRLU014NPBF

PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak I-Pak IRLR014NPbF IRLU014NPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 10 7.1 40 28 0.2 ± 16 35 6.0 2.8 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units ––– ––– ––– 5.3 50 110 °C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 10/01/10 IRLR/U014NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 VGS = 10V, ID = 6A „ Ω ––– ––– 0.21 VGS = 4.5V, ID = 5A „ 1.0 ––– ––– V VDS = VGS, ID = 250µA 3.1 ––– ––– S VDS = 25V, ID = 6A‡ ––– ––– 25 VDS = 55V, VGS = 0V µA ––– ––– 250 VDS = 55V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 7.9 ID = 6A ––– ––– 1.4 nC VDS = 44V ––– ––– 4.4 VGS = 5.0V, See Fig. 6 and 13 „ ––– 6.5 ––– VDD = 28V ––– 47 ––– ID = 6A ns ––– 12 ––– RG = 6.2Ω, VGS = 5.0V ––– 23 ––– RD = 4.5Ω, See Fig. 10 „ Between lead, ––– 4.5 ––– nH 6mm (0.25in.) G from package ––– 7.5 ––– and center of die contact† ––– 265 ––– VGS = 0V ––– 80 ––– pF VDS = 25V ––– 38 ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 10 showing the A G integral reverse ––– ––– 40 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 6A, VGS = 0V „ ––– 37 56 nS TJ = 25°C, IF = 6A ––– 48 71 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ Starting TJ = 25°C, L = 1.96mH … This is applied for I-PAK, LS of D-PAK is measured between max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = 6A. (See Figure 12) lead and center of die contact ƒ ISD ≤ 6.0A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 www.irf.com IRLR/U014NPbF 10 100 VGS VGS 15V 15V 10V 12V 5.0V 10V 4.5V 7.0V 3.5V 5.0V 3.0V 4.5V 2.7V 2.7V BOTTOM BOTTOM2.0V 2.5V TOP TOP 1 2.5V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 100 TJ = 175 ° C 10 1 V DS = 50V 20µs PULSE WIDTH 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C www.irf.com 10 100 Fig 2. Typical Output Characteristics 2.5 8.0 1 VDS , Drain-to-Source Voltage (V) 100 6.0 20µs PULSE WIDTH TJ = 175 °C 0.1 0.1 Fig 1. Typical Output Characteristics 4.0 2.5V 1 VDS , Drain-to-Source Voltage (V) 0.1 2.0 VGS VGS 15V 15V 12V 10V 10V 5.0V 7.0V 4.5V 5.0V 3.5V 4.5V 3.0V 2.7V 2.7V BOTTOM 2.0V BOTTOM 2.5V TOP TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 ID = 10A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U014NPbF Ciss 400 C, Capacitance (pF) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 300 Coss 200 Crss 100 0 1 10 15 VGS , Gate-to-Source Voltage (V) 500 VDS = 44V VDS = 27V 10 5 0 100 ID = 6 A FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 4 6 8 10 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 2 QG , Total Gate Charge (nC) 10 TJ = 175 ° C 1 TJ = 25 ° C 0.1 0.2 0.6 1.0 V GS = 0 V 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.8 10us 10 100us 1ms 1 0.1 10ms TC = 25 ° C TJ = 175 ° C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U014NPbF 10.0 V GS 8.0 ID , Drain Current (A) RD VDS D.U.T. RG 6.0 + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 PDM 0.05 0.02 0.01 0.1 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D.U.T RG 10V 20V IAS DRIVER + V - DD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRLR/U014NPbF 60 TOP 50 BOTTOM ID 2.4A 5.0A 6.0A 40 30 20 10 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V .2µF IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLR/U014NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U014NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRF R120 116A 12 34 ASS EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF R120 12 ASS EMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) P = DES IGNAT ES LEAD-FREE PRODUCT QUALIFIED T O T HE CONSUMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS SEMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRLR/U014NPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information E XAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 IN T HE AS SEMBLY LINE "A" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBER IRF U120 119A 56 78 ASSE MBLY LOT CODE Note: "P" in as s embly line pos ition indicates Lead-Free" DAT E CODE YE AR 1 = 2001 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 ASS EMBLY LOT CODE 78 DAT E CODE P = DESIGNAT ES LE AD-FREE PRODUCT (OPT IONAL) YEAR 1 = 2001 WEEK 19 A = ASS EMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLR/U014NPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 10/2010 10 www.irf.com