Data Sheet No. PD60238 revE
IRS2153(1)D(S)PbF
SELF-OSCILLATING HALF-BRIDGE DRIVER IC
Features
Product Summary
Integrated 600 V half-bridge gate driver
CT, RT programmable oscillator
15.4 V Zener clamp on VCC
Micropower startup
Non-latched shutdown on CT pin (1/6th VCC)
Internal bootstrap FET
Excellent latch immunity on all inputs and outputs
+/- 50 V/ns dV/dt immunity
ESD protection on all pins
8-lead SOIC or PDIP package
Internal deadtime
Description
The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more
advanced silicon platform, and incorporates a high
voltage half-bridge gate driver with a front end oscillator
similar to the industry standard CMOS 555 timer. HVIC
and latch immune CMOS technologies enable rugged
monolithic construction. The output driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction. Noise immunity is achieved with low
di/dt peak of the gate drivers.
VOFFSET
600 V Max
Duty cycle
50%
Driver source/sink
current
180 mA/260 mA typ.
Vclamp
15.4 V typ.
Deadtime
1.1 µs typ. (IRS2153D)
0.6 µs typ. (IRS21531D)
Package
PDIP8
IRS2153(1)DPbF
SO8
IRS2153(1)DSPbF
Typical Connection Diagram
+ AC Rectified Line
RVCC
RT
2
RT
CT
CVCC
3
CT
COM
8
1
4
IRS2153(1)D
VCC
7
6
VB
CBOOT
HO
MHS
L
VS
RL
5
LO
MLS
- AC Rectified Line
1
IRS2153(1)D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Definition
Symbol
Min.
Max.
-0.3
625
VB
High side floating supply voltage
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS – 0.3
VB + 0.3
VLO
Low side output voltage
-0.3
VCC + 0.3
IRT
RT pin current
-5
5
VRT
RT pin voltage
-0.3
VCC + 0.3
VCT
CT pin voltage
-0.3
VCC + 0.3
ICC
Supply current (Note 1)
Maximum allowable current at LO and HO due to external
power transistor Miller effect.
Allowable offset voltage slew rate
---
20
-500
500
-50
50
IOMAX
dVS/dt
PD
Maximum power dissipation @ TA ≤ +25 ºC, 8-Pin DIP
---
1.0
PD
Maximum power dissipation @ TA ≤ +25 ºC, 8-Pin SOIC
---
0.625
RthJA
Thermal resistance, junction to ambient, 8-Pin DIP
---
85
RthJA
Thermal resistance, junction to ambient, 8-Pin SOIC
---
128
TJ
Junction temperature
-55
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
---
300
Units
V
mA
V
mA
V/ns
W
ºC/W
ºC
Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal
breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.
2
IRS2153(1)D
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Parameter
Definition
Symbol
Min.
Max.
VCC - 0.7
VCLAMP
-3.0 (Note 2)
600
Units
VBS
High side floating supply voltage
VS
Steady state side floating supply offset voltage
VCC
Supply voltage
VCCUV+ +0.1 V
VCC CLAMP
ICC
Supply current
(Note 3)
5
mA
TJ
Junction temperature
-40
125
ºC
V
Note 2: It is recommended to avoid output switching conditions where the negative-going spikes at the VS
node would decrease VS below ground by more than -5 V.
Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6 V zener diode
clamping the voltage at this pin.
Recommended Component Values
Parameter
Component
Symbol
Min.
Max.
Units
RT
Timing resistor value
1
---
kΩ
CT
CT pin capacitor value
330
---
pF
VBIAS (VCC, VBS) = 14 V, VS=0 V and TA = 25 °C, CLO = CHO = 1 nF.
Frequency vs. RT
1,000,000
CT Values
Frequency (Hz)
100,000
330pf
470pF
10,000
1nF
2.2nF
1,000
4.7nF
10nF
100
10
1,000
10,000
100,000
1,000,000
RT (Ohm)
For further information, see Fig. 12.
3
IRS2153(1)D
Electrical Characteristics
VBIAS (VCC, VBS) = 14 V, CT = 1 nF, VS=0 V and TA = 25 °C unless otherwise specified. The output voltage and current (VO and IO) parameters are
referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
Low Voltage Supply Characteristics
VCCUV+
Rising VCC undervoltage lockout threshold
10.0
11.0
12.0
VCCUV-
Falling VCC undervoltage lockout threshold
8.0
9.0
10.0
VCC undervoltage lockout hysteresis
1.6
2.0
2.4
Micropower startup VCC supply current
---
130
170
IQCC
Quiescent VCC supply current
---
800
1000
ICC
VCC supply current
---
1.8
---
mA
RT = 36.9 kΩ
14.4
15.4
16.8
V
ICC = 5 mA
Quiescent VBS supply current
---
60
80
µA
VBSUV+
VBS supply undervoltage positive going
threshold
8.0
9.0
9.5
VBSUV-
VBS supply undervoltage negative going
threshold
7.0
8.0
9.0
Offset supply leakage current
---
---
50
18.4
19.0
19.6
88
93
100
RT pin duty cycle
---
50
---
CT pin current
---
0.02
1.0
µA
mA
VCCUVHYS
IQCCUV
VCC CLAMP
VCC zener clamp voltage
V
µA
VCC ≤ VCCUV-
Floating Supply Characteristics
IQBS
ILK
V
µA
VB = VS = 600 V
Oscillator I/O Characteristics
fOSC
d
ICT
Oscillator frequency
kHz
%
RT = 36.5 kΩ
RT = 7.15 kΩ
fo < 100 kHz
ICTUV
UV-mode CT pin pulldown current
0.20
0.30
0.6
VCT+
Upper CT ramp voltage threshold
---
9.32
---
VCT-
Lower CT ramp voltage threshold
---
4.66
---
VCTSD
CT voltage shutdown threshold
2.2
2.3
2.4
VRT+
High-level RT output voltage, VCC - VRT
---
10
50
IRT = -100 µA
---
100
300
IRT = -1 mA
VRT-
Low-level RT output voltage
---
10
50
IRT = 100 µA
---
100
300
IRT = 1 mA
VRTUV
UV-mode RT output voltage
---
0
100
VRTSD
---
10
50
---
100
300
SD-mode RT output voltage, VCC - VRT
VCC = 7 V
V
VCC ≤ VCCUVmV
IRT = -100 µA,
VCT = 0 V
IRT = -1 mA,
VCT = 0 V
4
IRS2153(1)D
Electrical Characteristics
VBIAS (VCC, VBS) = 14 V, CT = 1 nF, VS=0 V and TA = 25 °C unless otherwise specified. The output voltage and current (VO and IO)
parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
Gate Driver Output Characteristics
VOH
High-level output voltage
---
VCC
---
VOL
Low-level output voltage
---
COM
---
VOL_UV
UV-mode output voltage
---
COM
---
tr
Output rise time
---
120
220
tf
Output fall time
---
50
80
tsd
Shutdown propagation delay
---
350
---
td
Output deadtime (HO or LO) (IRS2153D)
0.65
1.1
1.75
µs
td
Output deadtime (HO or LO) (IRS21531D)
0.35
0.6
0.85
µs
IO+
Output source current
---
180
---
IO-
Output sink current
---
260
---
IO = 0 A
V
IO = 0 A,
VCC ≤ VCCUVns
mA
Bootstrap FET Characteristics
VB_ON
VB when the bootstrap FET is on
---
13.7
---
IB_CAP
VB source current when FET is on
40
55
---
IB_10V
VB source current when FET is on
10
12
---
V
mA
CBS=0.1 uF
VB=10 V
5
IRS2153(1)D
Lead Definitions
RT
CT
COM
8
1
2
3
4
IRS2153(1)D
VCC
7
6
5
VB
HO
VS
LO
Lead
Description
Symbol
VCC
Logic and internal gate drive supply voltage
RT
Oscillator timing resistor input
CT
Oscillator timing capacitor input
COM
IC power and signal ground
LO
Low-side gate driver output
VS
High voltage floating supply return
HO
High-side gate driver output
VB
High side gate driver floating supply
6
IRS2153(1)D
Functional Block Diagram
RT 2
R
HV
LEVEL
SHIFT
+
R
R
+
-
S
Q
Q
+
R/2
S Q
R1
R2
R
7
HO
6
VS
S
PULSE
GEN
VB
Q
PULSE
FILTER
BOOTSTRAP
DRIVE
DEAD
TIME
R/2
CT 3
DEAD
TIME
8
15.4V
DELAY
1 VCC
5
LO
4
COM
M1
UV
DETECT
7
IRS2153(1)D
Timing Diagram
Operating Mode
VCCUV+
VCC
Fault Mode:
CT
