Data Sheet No. PD60277
IRS2304(S)PbF
HALF-BRIDGE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
Floating channel designed for bootstrap operation
to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Internal 100 ns deadtime
Output in phase with input
RoHS compliant
Product Summary
VOFFSET
IO+/- (min)
VOUT
Delay Matching
Internal deadtime
ton/off (typ.)
600 V max.
60 mA/130 mA
10 V - 20 V
50 ns
100 ns
150 ns/150 ns
Package
Description
The IRS2304 is a high voltage, high speed power
MOSFET and IGBT driver with independent high-side
and low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with Feature Comparison
Crossstandard CMOS or LSTTL output,
Input
conduction
Part
down to 3.3 V logic. The output driver
logic
prevention
features a high pulse current buffer
logic
stage designed for minimum driver 2106/2301 HIN/LIN
no
21064
cross-conduction. The floating chan2108
HIN/LIN
yes
nel can be used to drive an N-chan21084
nel power MOSFET or IGBT in the 2109/2302
IN/SD
yes
high-side configuration which oper21094
yes
HIN/LIN
ates up to 600 V.
2304
Block Diagram
8-Lead
PDIP
Deadtime
(ns)
8 Lead
SOIC
Ground Pins
Programmable 540 - 5000
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
Internal 100
COM
none
Internal 540
Programmable 540 - 5000
Internal 540
ton/toff
(ns)
220/200
220/200
750/200
160/140
up to 600 V
Vcc
LIN
LIN
HIN
HIN
VCC
COM
VB
HO
VS
LO
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). These diagrams show electrical connections
only. Please refer to our Application
Notes and DesignTips for proper circuit board layout.
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1
IRS2304(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
VS
High- side offset voltage
VB
High- side floating supply voltage
Min.
Max.
VB - 25
VB + 0.3
-0.3
625
VS - 0.3
VB + 0.3
VHO
High- side floating output voltage HO
VCC
Low- side and logic fixed supply voltage
-0.3
25
VLO
Low- side output voltage LO
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN, LIN)
Com
Logic ground
dVS/dt
PD
RthJA
Allowable offset supply voltage transient
Package power dissipation @ TA ≤ +25 °C
Thermal resistance, junction to ambient
-0.3
VCC + 0.3
VCC -25
VCC + 0.3
—
50
8-Lead SOIC
—
0.625
8-Lead PDIP
—
1.0
8-Lead SOIC
—
200
8-Lead PDIP
—
125
TJ
Junction temperature
—
150
TS
Storage temperature
-50
150
TL
Lead temperature (soldering, 10 seconds)
—
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential.
Symbol
Definition
VB
High- side floating supply voltage
VS
High- side floating supply offset voltage
Min.
Max.
VS + 10
VS + 20
Note 1
600
VHO
High-side (HO) output voltage
VS
VB
VLO
Low- side (LO) output voltage
COM
VCC
VIN
Logic input voltage (HIN, LIN)
COM
VCC
VCC
Low- side supply voltage
10
20
-40
125
TA
Ambient temperature
Units
V
°C
Note 1: Logic operational for VS of COM -5 V to COM +600 V. Logic state held for VS of COM -5 V to COM -VBS.
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2
IRS2304(S)PbF
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15 V and TA = 25 °C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and VS is applicable to HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
VCCUV+
VBSUV+
VCC and VBS supply undervoltage positive going
threshold
8
8.9
9.8
VCCUV-
VCC and VBS supply undervoltage negative going
threshold
7.4
8.2
9
VCC supply undervoltage lockout hysteresis
0.3
0.7
—
VBSUVVCCUVH
VBSUVH
ILK
Offset supply leakage current
—
—
50
IQBS
Quiescent VBS supply current
20
60
150
IQCC
Quiescent VCC supply current
50
120
240
VIH
Logic “1” input voltage
2.3
—
—
VIL
Logic “0” input voltage
—
—
0.7
VOH
High level output voltage, VBIAS - VO
—
0.05
0.2
VOL
Low level output voltage, VO
—
0.02
0.1
IIN+
Logic “1” input bias current
—
5
40
IIN-
Logic “0” input bias current
—
1.0
5.0
IO+
Output high short circuit pulse current
60
290
—
IO-
Output low short circuit pulsed current
130
600
—
V
VB = VS = 600 V
µA
VIN = 0 V or 5 V
V
IO = 2 mA
µA
mA
VIN = 5 V
VIN = 0 V
VO = 0 V
PW ≤ 10 µs
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15 V, VS = COM, CL = 1000 pF and TA = 25 °C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
Turn-on propagation delay
90
150
toff
210
VS = 0 V
VS = 0 V or 600 V
Turn-off propagation delay
90
150
210
tr
Turn-on rise time
—
70
120
tf
Turn-off fall time
—
35
60
DT
Deadtime
80
100
190
MT
Delay matching, HS & LS turn-on/off
—
—
50
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ns
3
IRS2304(S)PbF
Functional Block Diagram
VB
2304
UV
DETECT
HO
R
HV
LEVEL
SHIFTER
HIN
R
PULSE
FILTER
S
VS
PULSE
GENERATOR
SHOOTTHROUGH
PREVENTION
VCC
UV
DETECT
DELAY
LIN
Q
LO
COM
Lead Definitions
Symbol
Description
VCC
Low-side supply voltage
COM
Logic ground and low-side driver return
HIN
Logic input for high-side gate driver output
LIN
Logic input for low-side gate driver output
VB
High-side floating supply
HO
High-side driver output
VS
High voltage floating supply return
LO
Low-side driver output
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4
IRS2304(S)PbF
Lead Assignments
1
LIN
VB
8
1
LIN
VB
8
2
HIN
HO
7
2
HIN
HO
7
3
VCC
VS
6
3
VCC
VS
6
4
COM
LO
5
4
COM
LO
5
8-Lead PDIP
8-Lead SOIC
HIN
LIN
HO
Internal Deadtime
LO
Figure 1. Input/Output Functionality Diagram
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5
IRS2304(S)PbF
50%
50%
HIN LIN
t on
t off
tr
90%
90%
HO
LO
tf
10%
10%
Figure 2. Switching Time Waveforms
HIN
LIN
50%
50%
90%
10%
LO
HO
DT
DT
90%
10%
Figure 3. Internal Deadtime Timing
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6
Vc c U VLO T hr es hold (- ) (V)
12
11
10
M ax.
9
Typ.
8
M in.
7
-50
-25
0
25
50
75
100
125
10
M ax.
9
Typ.
8
M in.
7
6
-50
-25
240
180
120
60
M ax.
0
25
50
50
75
100
125
Figur e 5. V CC / V DD Undervoltage Threshold (-)
vs. T emperature
300
-25
25
Temperature ( C)
Temperature ( C)
0
-50
0
o
Figure 4. VC C and V BS Undervoltage
Threshold (+) vs. Temperature
Offs et Supply Leak ag e Current (µA)
11
o
75
100
125
Offset Supply Leakage Current (µA)
VCC and VBS U VLO T hr es hold (+) (V)
IRS2304(S)PbF
300
240
180
120
0
0
o
100
200
300
400
500
600
VB Boost Voltage (V)
Temperature ( C)
Figure 6A. Offset Supply L eakage Curre nt
vs. Temperature
M ax.
60
Figure 6B. Offse t Supply Leak age Current
vs. Supply Voltage
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7
IRS2304(S)PbF
V BS Supply Current (µA)
VBS Supply Current (µA)
300
240
180
120
M ax.
60
Typ.
M in.
300
240
180
120
0
-50
-25
0
25
50
75
100
M ax.
60
Typ.
M in.
0
10
125
12
o
Temperature ( C)
20
500
V CC Supp ly Current (µA)
V CC Supp ly Current (µA)
18
Figur e 7B. V BS Sup ply Current
vs. Supply Voltage
500
400
Max.
200
Typ.
100
0
-50
16
V BS Supply Voltage (V)
Figure 7A. V BS Supply Current
vs. Temperatu re
300
14
Min.
-25
0
25
50
75
100
o
Temperature ( C)
125
400
300
200
Max.
100
Typ.
Min.
0
10
12
14
16
18
20
VCC Supply Voltage (V)
Figure 8A. Quiescen t VCC Supply
Cu rrent vs. Tem perature
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Figure 8B. Quiescent Vcc Supply Curre nt
vs. Supply Voltage
8
6
6
5
5
Input Voltage (V)
Input Voltage (V)
IRS2304(S)PbF
4
3
M in.
2
1
4
3
M in.
2
1
0
-50
0
-25
0
25
50
75
100
125
5
10
Temperature ( oC)
20
Supply Voltage (V)
Figure 9A. Logic "1" Input Voltage
vs. Temperature
Figure 9B. Logic "1" In put Voltage
vs. Supply Voltage
4
4
Input Voltage (V)
Input Voltage (V)
15
3
2
1
3
2
1
Max.
0
- 50
M ax.
0
-25
0
25
50
75
100
125
10
o
Temperatre ( C)
Figure 10A. Logic "0" Inpu t Voltage vs.
Temperature
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12
14
16
18
20
Supply Voltage (V)
Figure 10B. Logic "0" In put Voltage
vs. Supply Volt age
9
0.5
High L evel Output Vol tage (V)
High L ev el O utput Vo ltage (V)
IRS2304(S)PbF
0.4
0.3
0.2
M ax.
0.1
0.0
-50
-25
0
25
50
75
100
125
0.5
0.4
0.3
M ax
0.2
0.1
0.0
10
12
Temperature (oC)
18
20
Figure 11B. High Level Output Voltage
vs. Su pply Voltage (Io = 2 mA)
Low Level Output Voltage (V)
Low Level Output Voltage (V)
16
V BIAS Supply Voltage (V)
Figure 11A. High Level Output Voltage
vs. Te mperature (I o = 2 mA)
0.20
0.15
0.10
14
M ax.
0.05
0.20
0.15
M ax
0.10
0.05
0.00
0.00
-50
-25
0
25
50
75
100
125
10
12
14
16
18
Temperature ( C)
V BIAS Supply Voltage (V)
Figure 12A. Low Level Output Voltage
vs.Temperature (Io = 2 mA)
Figure 12B. Low L evel Output
vs. Supply Voltage (Io = 2 mA)
o
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20
10
100
Logic "1" Input Current (µA))
Logic "1" Input Curren t (µA)
IRS2304(S)PbF
75
50
25
Max.
Typ.
0
-50
-25
0
25
50
75
100
50
Max.
40
30
20
10
Typ.
0
125
10
12
Logic "0" Input Bias C urrent (µA)
Lo gic "0" Input Bia s Current (µA)
6
Max
4
3
2
1
-25
0
25
50
75
100
Temperature (°C)
Figure 14A. Logic "0" Input Bias Current
vs. Temperature
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18
20
Figure 13B. Logic "1" Input Current
vs. Supply Voltage
Figure 13A. Logic "1" Inpu t Current vs.
Temperature
0
-50
16
V CC Supply Voltage (V)
Temperature ( oC)
5
14
125
6
5
Max
4
3
2
1
0
10
12
14
16
18
20
Supply Voltage (V)
Figure 14B. Logic "0" Input Bias Current
vs. Voltage
11
100
Outpu t Sourc e Curren t (mA)
Outpu t Sourc e Curre nt (mA)
IRS2304(S)PbF
75
Min.
50
25
0
-50
-25
0
25
50
75
100
100
75
50
Min.
25
0
125
10
12
o
Temperature ( C)
16
18
20
V BIAS Supply Voltage (V)
Figure 15A. Output Sour ce Current vs .
Temperatu re
Figure 15B. Output Source Current
vs. Supply Voltage
200
Outpu t Sink Current (m A)
200
Outpu t Sink Current (mA)
14
Min.
150
100
50
0
-50
150
100
M in.
50
0
-25
0
25
50
75
100
125
10
12
14
16
18
Temperature ( oC)
V BIAS Supply Voltage (V)
Figure 16A. Output Sink Current
vs.Temperature
Figure 16B. Output Sink Current
vs. Supply Vo ltage
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20
12
500
Turn-On Delay Time ( ns ) .
Turn-On Delay Time ( ns ) .
IRS2304(S)PbF
400
300
200
M ax
100
Typ.
0
-50
500
400
300
M ax
200
Typ.
100
0
-25
0
25
50
75
100
125
10
12
Temperature(oC)
500
400
400
Turn- Off Time (ns)
Turn- Off Time (ns)
18
20
Figure 17B. Turn-On Pro pagation Delay
vs. Supply Vo ltage
500
300
100
16
Supply Voltage (V)
Figure 17A. Turn-On Pro pagation Delay
vs. Tem perature
200
14
M ax.
300
Max.
200
Typ.
100
Typ.
0
-50
0
-25
0
25
50
75
100
125
10
14
16
18
20
Supply Voltage (V)
Temperature(oC)
Figure 18A. Turn-Off Propagation Delay
vs . Temperatur e
12
Figure 18B. Tu rn-Off Propag ation Delay
vs. Supply Voltag e
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13
500
500
Turn-O n Rise Time (n s) .
Turn-O n Rise Time (ns) .
IRS2304(S)PbF
400
300
200
100
M ax.
400
300
200
100
Typ.
0
-50
M ax
Typ
0
-25
0
25
50
75
100
10
125
12
18
20
Figure 19B. Turn-On Rise Time
vs . Supply Voltage
Figure 19A. Turn-On Rise Time
vs.Temperatur e
500
Turn-Off Fall Time (n s)
500
Turn-Off Fall Time (n s)
16
V BIAS Supply Voltage (V)
Temperature (oC)
400
300
200
100
M ax.
0
-50
14
300
200
-25
0
25
50
75
100
o
Temperature ( C)
Figure 20A. Turn-Off Fall Time
vs. Temperature
125
M ax
100
0
Typ.
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400
Typ
10
12
14
16
18
20
V BIAS Supply Voltage (V)
Figure 20B. Turn-Off Fall Time
vs. Supply voltag e
14
300
300
250
250
200
Deadti me (ns)
Deadti me (ns)
IRS2304(S)PbF
M ax.
150
Typ.
100
50
150
Typ.
100
M in.
50
M in.
0
-50
M ax.
200
0
-25
0
25
50
75
100
125
10
12
Temperature ( oC)
16
18
20
Figure 21B. Deadtime vs. Supply Voltage
0
140
-2
120
Temperature ( oC)
VS Offset Supply Voltage (V)
Figure 21A. Deadtime vs. Temperature
Typ.
-4
14
Supply Voltage (V)
-6
-8
100
80
140 V
70 V
0V
60
40
-10
10
12
14
16
18
20
20
1
V BS Floating Supply Voltage (V)
Figure 22. Maximum V S Negative Offset
vs. Supply Voltag e
10
100
1000
Frequency (kHz)
Figure 23. IRS 2304 vs. Frequen cy (IRFBC20),
Rga te=33 Ω , VCC=15 V
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15
IRS2304(S)PbF
140
140
Temperature (oC)
Temperature (o C)
120
120
100
100
140 V
80
70 V
0 V
60
140 V
80
70 V
0 V
60
40
40
20
20
1
10
100
1
1000
Frequency (kHz)
R gate =15 Ω , Vcc =15 V
140 V
140
70 V
0 V
120
Tempe rature ( o C)
Temperature (o C)
111000
Frequency (kHz)
R gate =22 Ω , Vcc =15 V
120
100
Figure 25. IRS2304 vs. Frequency (IRFBC40),
Figure 24. IRS2304 vs. Frequency (IRFBC30),
140
10
100
80
60
40
100
80
140 V
60
70 V
0V
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
Figure 26. IRS2304 vs. Frequency (IRFPE50),
R gate =10 Ω , Vcc =15 V
Figure 27. IRS2304S vs. Frequency (IRFBC20),
R gate =33 Ω , Vcc =15 V
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16
IRS2304(S)PbF
140
140 V
100
70 V
80
0 V
60
40
Temperature (o C)
Temperature (oC)
120
120
0V
100
80
60
40
20
20
1
10
100
1000
1
Frequency (kHz)
Figure 28. IRS2304S vs. Frequency (IRFBC30),
R gate =22 Ω , Vcc =15 V
10
100
Frequency (kHz)
1000
Figure 29. IRS2304S vs. Frequency (IRFBC40),
R gate =15 Ω , Vcc =15 V
140 V 70 V 0 V
140
Tempr eture (oC)
1140 V 70 V
140
120
100
80
60
40
20
1
10
100
1000
Frequency (kHz)
Figure 30. IR2304s vs . Frequency (IRFPB50),
R gate =10 Ω , Vcc =15 V
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17
IRS2304(S)PbF
Case outlines
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
D
DIM
B
5
A
FOOTPRINT
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
6.46 [.255]
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
3X 1.27 [.050]
e1
.0098
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
0.25 [.010]
A1
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
8X L
8X c
7
C A B
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
2. C ONTROLLING DIMENSION: MILLIMETER
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
8 Lead SOIC
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.025 BASIC
1.27 BASIC
K x 45°
A
C
8X b
8X 1.78 [.070]
MAX
b
e1
6X
MILLIMETERS
MAX
A
8X 0.72 [.028]
INCHES
MIN
7 DIMENSION IS THE LENG TH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)
18
IRS2304(S)PbF
Tape & Reel
8-lead SOIC
LOAD ED TA PE FEED DIRECTION
A
B
H
D
F
C
N OT E : CO NTROLLING
D IM ENSION IN M M
E
G
C A R R I E R T A P E D IM E N S I O N F O R 8 S O I C N
M e tr ic
Im p e r ia l
Co d e
M in
M ax
M in
M ax
A
7 .9 0
8 .1 0
0. 31 1
0 .3 1 8
B
3 .9 0
4 .1 0
0. 15 3
0 .1 6 1
C
1 1 .7 0
1 2 . 30
0 .4 6
0 .4 8 4
D
5 .4 5
5 .5 5
0. 21 4
0 .2 1 8
E
6 .3 0
6 .5 0
0. 24 8
0 .2 5 5
F
5 .1 0
5 .3 0
0. 20 0
0 .2 0 8
G
1 .5 0
n/ a
0. 05 9
n/ a
H
1 .5 0
1 .6 0
0. 05 9
0 .0 6 2
F
D
C
B
A
E
G
H
R E E L D IM E N S I O N S F O R 8 S O IC N
M e tr ic
Im p e r ia l
Co d e
M in
M ax
M in
M ax
A
32 9.60
3 3 0 .2 5
1 2 .9 76
1 3 .0 0 1
B
2 0 .9 5
2 1 . 45
0. 82 4
0 .8 4 4
C
1 2 .8 0
1 3 . 20
0. 50 3
0 .5 1 9
D
1 .9 5
2 .4 5
0. 76 7
0 .0 9 6
E
9 8 .0 0
1 0 2 .0 0
3. 85 8
4 .0 1 5
F
n /a
1 8 . 40
n /a
0 .7 2 4
G
1 4 .5 0
1 7 . 10
0. 57 0
0 .6 7 3
H
1 2 .4 0
1 4 . 40
0. 48 8
0 .5 6 6
www.irf.com
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19
IRS2304(S)PbF
LEADFREE PART MARKING INFORMATION
Part number
Date code
IRSxxxxx
YWW?
?XXXX
Pin 1
Identifier
?
P
IR logo
MARKING CODE
Lead Free Released
Non-Lead Free
Released
Lot Code
(Prod mode - 4 digit SPN code)
Assembly site code
Per SCOP 200-002
ORDER INFORMATION
8-Lead PDIP IRS2304PbF
8-Lead SOIC IRS2304SPbF
8-Lead SOIC Tape & Reel IRS2304STRPbF
The SOIC-8 is MSL2 qualified.
This product has been designed and qualified for the industrial level.
Qualification standards can be found at www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 12/4/2006
www.irf.com
20
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