27 January 2011
IRS2334SPbF/IRS2334MPbF
3 PHASE GATE DRIVER HVIC
Product Summary
Features
Floating channel designed for bootstrap operation
Fully operational to 600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Integrated dead time protection
Shoot-through (cross-conduction) prevention logic
Under-Voltage lockout for both channels
Independent 3 half-bridge drivers
3.3 V input logic compatible
Advanced input filter
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
RoHS compliant
Topology
3 phase
VOFFSET
≤ 600 V
VOUT
Io+ & I o- (typical)
200 mA & 350 mA
tON & tOFF (typical)
530 ns
Package Options
Typical Applications
10 V – 20 V
20 leads wide body SOIC
Motor Control
Low Power Fans
General Purpose Inverters
Micro/Mini Inverter Drivers
28 leads MLPQ 5x5 (32 leads without 4)
Typical Connection Diagram
Up to 600V
Vcc
Vcc
HIN1,2,3
HIN1,2,3
LIN1,2,3
LIN1,2,3
VB1,2,3
HO1,2,3
VS 1,2,3
TO
LOAD
LO1,2,3
COM
IRS2334
GND
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1
© 2010 International Rectifier
IRS2334SPbF/MPbF
Table of Contents
Page
Description
3
Simplified Block Diagram
3
Typical Application Diagram
4
Qualification Information
5
Absolute Maximum Ratings
6
Recommended Operating Conditions
6
Static Electrical Characteristics
7
Dynamic Electrical Characteristics
7
Functional Block Diagram
8
Input/Output Pin Equivalent Circuit Diagram
9
Lead Definitions
10
Lead Assignments
11
Application Information and Additional Details
12
Parameter Temperature Trends
21
Package Details
25
Tape and Reel Details
27
Part Marking Information
29
Ordering Information
30
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© 2010 International Rectifier
2
IRS2334SPbF/MPbF
Description
The IRS2334 is a high voltage, high speed power MOSFET and IGBT driver with three independent high side
and low side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune CMOS
technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL
outputs, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration up
to 600 V.
Simplified Block Diagram
HV floating well
Schmitt trigger, minimum dead time
and shoot-through protection
to high side
power switches
(x3)
HV Level
Shifters
Delay
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to low side
power switches
(x3)
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3
IRS2334SPbF/MPbF
Typical Application Diagram
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4
IRS2334SPbF/MPbF
Qualification Information†
Industrial††
Comments: This IC has passed JEDEC industrial
qualification. IR consumer qualification level is granted by
extension of the higher Industrial level.
Qualification Level
MSL2 , 260C
(per IPC/JEDEC J-STD-020)
Moisture Sensitivity Level
Class 1C
(per JEDEC standard JESD22-A114)
Class B
(per EIA/JEDEC standard EIA/JESD22-A115)
Class I, Level A
(per JESD78)
Human Body Model
ESD
Machine Model
IC Latch-Up Test
Yes
RoHS Compliant
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
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© 2010 International Rectifier
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IRS2334SPbF/MPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM unless otherwise specified. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB
VS
Definition
VHO1,2,3
VCC
VLO1,2,3
VIN
PWHIN
dVS/dt
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic and analog input voltages
High-side input pulse width
Allowable offset supply voltage slew rate
PD
Package power dissipation @ TA ≤ 25°C
RthJA
TJ
TS
TL
†
Thermal resistance, junction to ambient
20 lead SOIC
28 lead MLPQ
20 lead SOIC
28 lead MLPQ
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
Max.
-0.3
†
VB1,2,3 - 25
VS1,2,3 - 0.3
-0.3
-0.3
-0.3
500
—
—
—
—
—
—
-55
—
625
VB1,2,3 + 0.3
VB1,2,3 + 0.3
†
25
VCC + 0.3
VCC + 0.3
—
50
1.14
3.363
65.8
22.3
150
150
300
Units
V
ns
V/ns
W
°C/W
°C
All supplies are fully tested at 25 V. An internal 25 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are
absolute voltages referenced to COM unless otherwise specified. The VS1,2,3 offset ratings are tested with all
supplies biased at 15 V.
Symbol
VB1,2,3
VS1,2,3
VS1,2,3(t)
VHO1,2,3
VCC
VLO1,2,3
VIN
TA
†
††
Definition
Min.
High side floating supply voltage
†
Static high side floating supply offset voltage
Transient high side floating supply offset voltage††
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Ambient temperature
VS1,2,3 +10
-8
-50
VS1,2,3
10
0
0
-40
Max.
VS1,2,3 + 20
600
600
VB1,2,3
20
VCC
VCC
125
Units
V
°C
Logic operation for VS of –8 V to 600 V. Logic state held for VS of –8 V to –VBS.
Operational for transient negative VS of -50 V with a 50 ns pulse width. Guaranteed by design. Refer to the
Application Information section of this datasheet for more details.
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IRS2334SPbF/MPbF
Static Electrical Characteristics
(VCC-COM) = (VB1,2,3-VS1,2,3) = 15 V and TA = 25 oC unless otherwise specified. The VIN and IIN parameters are
referenced to COM. The VO and IO parameters are referenced to COM and VS1,2,3 and are applicable to the output
leads LO1,2,3 and HO1,2,3 respectively. The VCCUV and VBSUV parameters are referenced to COM and VS
respectively.
Symbol
VIH
VIL
VIN,TH+
VIN,THVOH
VOL
VCCUV+
VBSUV+
VCCUVVBSUVVCCUVH
VBSUVH
ILK
IQBS
IQCC
IIN+
IINIo+
Io-
Definition
Min.
Typ.
Max.
Units
2.5
—
—
—
—
—
—
—
1.9
1
0.9
0.4
—
0.8
—
—
1.4
0.6
V
10.4
11.1
11.6
10.2
10.9
11.4
VCC and VBS supply under-voltage hysteresis
0.1
0.2
—
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input bias current
Logic “0” input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
—
—
—
—
—
120
250
1
40
300
150
50
120
700
250
1
—
—
Logic “1” input voltage
Logic “0” input voltage
Input positive going threshold
Input negative going threshold
High level output voltage
Low level output voltage
VCC and VBS supply under-voltage positive
going threshold
VCC and VBS supply under-voltage negative
going threshold
200
350
µA
µA
Test Conditions
IO = 20 mA
VB =VS = 600 V
VIN = 0 V
µA
VIN = 5 V
VIN = 0 V
mA
VO = 0 V or 15 V
PW ≤ 10 µs
Dynamic Electrical Characteristics
VCC = VB1,2,3 = 15 V, VS1,2,3 = COM, TA = 25 oC and CL = 1000 pF unless otherwise specified.
Symbol
ton
toff
tr
tf
tFILIN
DT
MDT
MT
PM
†
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Input filter time
Dead time
Dead time matching
ton, toff propagation delay matching time
†
PW pulse width distortion
Min.
Typ.
Max.
400
400
—
—
200
190
—
—
—
530
530
125
50
350
290
—
—
—
750
750
190
75
510
420
60
50
75
Units
Test Conditions
VIN = 0V and 5V
ns
VIN = 0V & 5V
External dead time
0s
PW input =10µs
PM is defined as PWIN - PWOUT.
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IRS2334SPbF/MPbF
Functional Block Diagram
HIN1
Input
Noise
Filter
LIN1
Input
Noise
Filter
HIN2
Input
Noise
Filter
LIN2
Input
Noise
Filter
HIN3
Input
Noise
Filter
LIN3
Input
Noise
Filter
VB1
SD
SD
SD
HV
Level
Shifter
Deadtime &
Shoot-Through
Prevention
Deadtime &
Shoot-Through
Prevention
HV
Level
Shifter
Deadtime &
Shoot-Through
Prevention
HV
Level
Shifter
SET
Latch
RESET
UV
Detect
Driver
HO1
VS1
VB2
SET
Latch
RESET
UV
Detect
SET
Latch
RESET
UV
Detect
Driver
HO2
VS2
VB3
Driver
HO3
VS3
VCC
UV
Detect
Delay
Driver
LO1
Delay
Driver
LO2
Delay
Driver
LO3
COM
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IRS2334SPbF/MPbF
Input/Output Pin Equivalent Circuit Diagrams
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IRS2334SPbF/MPbF
Lead Definitions
Symbol
VCC
VB1
VB2
VB3
VS1
VS2
VS3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
HO1
HO2
HO3
LO1
LO2
LO3
COM
Description
Low side and logic power supply
High side floating power supply (phase 1)
High side floating power supply (phase 2)
High side floating power supply (phase 3)
High side floating supply return (phase 1)
High side floating supply return (phase 2)
High side floating supply return (phase 3)
Logic input for high side gate driver output HO1, input is in-phase with output
Logic input for high side gate driver output HO2, input is in-phase with output
Logic input for high side gate driver output HO3, input is in-phase with output
Logic input for low side gate driver output LO1, input is in-phase with output
Logic input for low side gate driver output LO2, input is in-phase with output
Logic input for low side gate driver output LO3, input is in-phase with output
High side gate driver output (phase 1)
High side gate driver output (phase 2)
High side gate driver output (phase 3)
Low side gate driver output (phase 1)
Low side gate driver output (phase 2)
Low side gate driver output (phase 3)
Low side supply return
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IRS2334SPbF/MPbF
Lead Assignments
VB2
HO2
VS2
VB3
HO3
HS3
31
30
27
26
25
32 leads MLPQ 5x5 without 4 leads
32
20 leads wide body SOIC
VS1
1
24
HO1
2
23
VB1
3
22
21
20
VCC
LO3
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COM
16
17
15
8
14
HIN3
13
LO2
12
18
11
7
LIN3
HIN2
10
LO1
LIN2
19
9
6
LIN1
HIN1
© 2010 International Rectifier
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IRS2334SPbF/MPbF
Application Information and Additional Details
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Shoot-Through Protection
Under-Voltage Lockout Protection
Truth Table: Under-Voltage lockout
Advanced Input Filter
Short-Pulse and Noise Rejection
Tolerant to Negative VS Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2334 HVIC is designed to drive high side and low side MOSFET or IGBT power devices. Figures 1 and 2
show the definition of some of the relevant parameters associated with the gate driver output functionality. The
output current that drives the gate of the external power switches is defined as IO. The output voltage that drives
the gate of the external power switches is defined as VHO for the high side and VLO for the low side; this
parameter is sometimes generically called VOUT and in this case the high side and low side output voltages are
not differentiated.
VB
(or VCC)
VB
(or VCC)
IO+
H
(or LO)
H
(or LO)
+
VH (or VL )
(or
VS
)
(or
Figure 1: HVIC sourcing current
VS
IO -
)
Figure 2: HVIC sinking current
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IRS2334SPbF/MPbF
Switching and Timing Relationships
The relationship between the input and output signals of the IRS2334 HVIC is shown in Figure 3. The definitions
of some of the relevant parameters associated with the gate driver input to output transmission are given.
LIN
or HIN
50%
50%
PWIN
t ON
LO
or HO
tR
PWOUT
90%
10%
tOFF
tF
90%
10%
Figure 3: Switching time waveforms
During interval A of Figure 4 the HVIC receives the command to turn on both the high and low side switches at
the same time; correspondingly, the shoot-through protection prevents the high and low side signals HO and LO
turn on by keeping them low.
Figure 4: Input/output timing diagram
Deadtime
The IRS2334 HVIC provides an integrated deadtime protection circuitry. The deadtime interval for this HVIC is
fixed; while other ICs within IR’s HVIC portfolio feature programmable deadtime for greater design flexibility. The
deadtime feature inserts a time interval in which both the gate driver outputs LO and HO are held off; to ensure
that the power switch being turned off has fully turned off before the second power switch is turned on. This
minimum deadtime is automatically inserted whenever the external deadtime commanded by the host
microcontroller is shorter than DT, while external deadtimes larger than DT are not modified by the gate driver.
Figure 7 illustrates the deadtime interval definition and the relationship between the output gate signals.
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IRS2334SPbF/MPbF
The deadtime interval introduced is matched with respect to the commutation from HIN turning off to LIN turning
on, and viceversa. Figure 5 defines the two deadtime parameters DT1 and DT2. The deadtime matching
parameter MDT is defined as the maximum difference between DT1 and DT2.
LIN
HIN
50%
LO
HO
50%
DT1
DT2
50%
50%
Figure 5: Deadtime definition
Matched Propagation Delays
The IRS2334 HVIC is designed for propagation delay matching. With this feature, the input to output propagation
delays tON, tOFF are the same for the low side and the high side channels; the maximum difference being specified
by the delay matching parameter MT as defined in Figure 6.
Figure 6: Delay Matching Waveform Definition
Input Logic Compatibility
The IRS2334 HVIC is designed with inputs compatible with standard CMOS and TTL outputs with 3.3 V and 5 V
logic level signals. Figure 7 shows how an input signal is logically interpreted.
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IRS2334SPbF/MPbF
Figure 7: HIN & LIN input thresholds
Shoot-Through Protection
The IRS2334 is equipped with a shoot-through protection circuitry which prevents cross-conduction of the power
switches. Table 1 shows the input to output relationship in the form of a truth table. Note that the HVIC has noninverting inputs (the output is in-phase with the respective input).
HIN
LIN
HO
LO
0
0
0
0
0
1
0
1
1
0
1
0
1
1
0
0
Table 1: Input/output truth table
Under-Voltage Lockout Protection
The IRS2334 HVIC provides under-voltage lockout protection on both the VCC low side and logic fixed power
supply and the VBS high side floating power supply. Figure 8 illustrates this concept by considering the VCC (or
VBS) plotted over time: as the waveform crosses the UVLO threshold, the under-voltage protection is entered or
exited.
Upon power up, should the VCC voltage fail to reach the VCCUV+ threshold, the gate driver outputs LO and HO will
remain disabled. Additionally, if the VCC voltage decreases below the VCCUV- threshold during normal operation,
the under-voltage lockout circuitry will shutdown the gate driver outputs LO and HO.
Upon power up, should the VBS voltage fail to reach the VBSUV threshold, the gate driver output HO will remain
disabled. Additionally, if the VBS voltage decreases below the VBSUV threshold during normal operation, the undervoltage lockout circuitry will shutdown the high side gate driver output HO.
The UVLO protection ensures that the HVIC drives external power devices only with a gate supply voltage
sufficient to fully enhance them. Without this protection, the gates of the external power switches could be driven
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IRS2334SPbF/MPbF
with a low voltage, which would result in power switches conducting current while with a high channel impedance,
which would produce very high conduction losses possibly leading to power device failure.
VCC
(or B )
V CCU +
(or BSU + )
VCCU (or BSU - )
Time
UVLO Protection
(Gate Driver Outputs Disabled
)
Norma
Operation
Norma
Operation
Figure 8: UVLO protection
Truth Table: Under-Voltage lockout
Table 2 provides the truth table for the IRS2334 HVIC.
The 1st line shows that for VCC below the UVLO threshold both the gate driver outputs LO and HO are disabled.
After VCC returns above VCCUV, the gate driver outputs return functional.
The 2nd line shows that for VBS below the UVLO threshold, the gate driver output HO is disabled. After VBS returns
above VBSUV, HO remains low until a new rising transition of HIN is received.
The last line shows the normal operation of the HVIC.
UVLO VCC
UVLO VBS
Normal operation
VCC
VBS