IRSM505-015
IRSM515-015 Series
6.0Ω, 500V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-015 and IRSM515-015 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-015 includes temperature feedback while IRSM515-015 does not.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
500V 3-phase inverter including high voltage gate drivers
Integrated bootstrap functionality
Low 6.0Ω (max, 25°C) RDS(on) Trench FREDFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Temperature feedback via NTC (IRSM505-015 only)
Optimized dV/dt for loss and EMI trade offs
Open-source for single and leg-shunt current sensing
3.3V logic compatible with advanced input filter
Driver tolerant to negative transient voltage (-Vs)
Isolation 1900VRMS, 1min
RoHS Compliant
Certified by UL - File Number E252584
Standard Pack
Series
NTC
IRSM505-015
IRSM515-015
1
Yes
No
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Package Type
Product Name
Form
Quantity
SOP23
Tube
240
IRSM505-015PA
DIP23
Tube
240
IRSM505-015DA
DIP23A
Tube
240
IRSM505-015DA2
SOP23
Tube
240
IRSM515-015PA
DIP23
Tube
240
IRSM515-015DA
DIP23A
Tube
240
IRSM515-015DA2
© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Internal Electrical Schematic
1 COM
1 COM
17 V+
2 VB1
2 VB1
3 VCC1
3 VCC1
4 HIN1
Half-Bridge
HVIC
5 LIN1
18 U/VS1
5 LIN1
19 VR1
6 NC
Integrated in HVIC
7 VB2
4 HIN1
20 VR2
8 VCC2
6 NC
17 V+
Half-Bridge
HVIC
18 U/VS1
19 VR1
Integrated in HVIC
7 VB2
20 VR2
8 VCC2
9 HIN2
Half-Bridge
HVIC
10 LIN2
21 V/VS2
9 HIN2
10 LIN2
11 VTH
21 V/VS2
Half-Bridge
HVIC
11 NC
12 VB3
12 VB3
22 VR3
13 VCC3
14 HIN3
Half-Bridge
HVIC
15 LIN3
23 W/VS3
14 HIN3
15 LIN3
16 NC
22 VR3
13 VCC3
Half-Bridge
HVIC
23 W/VS3
16 NC
IRSM505-015
IRSM515-015
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested
at manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol
Description
Min
Max
Unit
BVDSS
MOSFET Blocking Voltage
---
500
V
IO @ TC=25°C
DC Output Current per MOSFET
---
1.2
IOP @ TC =25°C
Pulsed Output Current per MOSFET (Note 1)
---
9
Pd @ TC=25°C
Maximum Power Dissipation per MOSFET
---
18
W
VISO
Isolation Voltage (1min)
---
1900
VRMS
TJ
Operating Junction Temperature
-40
150
°C
TC
Operating Case Temperature
-40
150
°C
TS
Storage Temperature
VS1,2,3
High Side Floating Supply Offset Voltage
VB1,2,3
A
-40
150
°C
VB1,2,3 - 20
VB1,2,3 +0.3
V
High Side Floating Supply Voltage
-0.3
525
V
VCC
Low Side and Logic Supply voltage
-0.3
25
V
VIN
Input Voltage of LIN, HIN
COM -0.3
VCC+0.3
V
Note 1: Pulse Width = 100µs, Single Pulse
2
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Recommended Operating Conditions
Symbol
Description
Min
Max
Unit
V+
Positive DC Bus Input Voltage
---
400
V
VS1,2,3
High Side Floating Supply Offset Voltage
(Note 2)
400
V
VB1,2,3
High Side Floating Supply Voltage
VS+12
VS+20
V
VCC
Low Side and Logic Supply Voltage
13.5
16.5
V
VIN
Input Voltage of LIN, HIN, ITRIP, EN, FLT
0
5
V
Fp
PWM Carrier Frequency
--20
Note 2: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS.
kHz
Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to
VS.
Symbol
Description
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
---
---
V
TJ=25°C, ILK=250µA
ILKH
Leakage Current of High Side FET
12
µA
TJ=25°C, VDS=500V
ILKL
Leakage Current of Low Side FET
Plus Gate Drive IC
14
µA
TJ=25°C, VDS=500V
RDS(on)
Drain to Source ON Resistance
VSD
TJ=25°C, VCC=15V, Id=0.5A
TJ=150°C, VCC=15V, Id=0.5A
(Note 3)
TJ=25°C, VCC=15V, ID=0.5A
---
5.0
6.0
Ω
---
12.3
---
Ω
Mosfet Body Diode Forward Voltage
---
0.8
---
V
VIN,th+
Positive Going Input Threshold
2.2
---
---
V
VIN,th-
Negative Going Input Threshold
---
---
0.8
V
VCCUV+,
VBSUV+
VCC and VBS Supply Under-Voltage,
Positive Going Threshold
8
8.9
9.8
V
VCCUV-,
VBSUV-
VCC and VBS supply Under-Voltage,
Negative Going Threshold
6.9
7.7
8.5
V
VCCUVH,
VBSUVH
VCC and VBS Supply Under-Voltage
Lock-Out Hysteresis
---
1.2
---
V
IQBS
Quiescent VBS Supply Current VIN=0V
---
42
60
µA
IQBS, ON
Quiescent VBS Supply Current VIN=4V
---
42
60
µA
IQCC
Quiescent VCC Supply Current VIN=0V
---
1.7
4
mA
IQCC, ON
Quiescent VCC Supply Current VIN=4V
---
1.8
4
mA
IIN+
Input Bias Current VIN=4V
---
5.9
18
µA
VIN=3.3V
IIN-
Input Bias Current VIN=0V
---
---
2
µA
VIN=0V
RBR
Internal Bootstrap Equivalent Resistor
Value
---
250
---
Ω
TJ=25°C
Note 3: Characterized, not tested at manufacturing
3
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Dynamic Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified.
Symbol
Description
Min
Typ
Max
Units
TON
Input to Output Propagation Turn-On
Delay Time
---
0.7
1.5
µs
TOFF
Input to Output Propagation Turn-Off
Delay Time
---
0.9
1.5
µs
TFIL,IN
Input Filter Time (HIN, LIN)
200
300
---
ns
DT
Deadtime Inserted
---
400
---
ns
EON
Turn-on switching energy loss
---
17
---
µJ
EOFF
Turn-off switching energy loss
---
3
---
µJ
EREC
Recovery energy loss
---
4
---
µJ
EON,150
Turn-on switching energy loss
---
30
---
µJ
EOFF,150
Turn-off switching energy loss
---
4
---
µJ
---
9
---
µJ
Conditions
ID=120mA, V+=30V
See Fig.1
EREC,150
Recovery energy loss
Note 4: Characterized, not tested at manufacturing
VIN=0 & VIN=3.3V
VIN=0 & VIN=3.3V without
external deadtime
V+=320V, ID=0.3A, L=40mH,
TC=25°C (Note 4)
V+=320V, ID=0.3A, L=40mH,
TC=150°C (Note 4)
Thermal and Mechanical Characteristics
Symbol
Description
Rth(J-C)
Junction to Case Thermal Resistance
Min
Typ
Max
Units
Conditions
---
7.4
---
°C/W
High Side V-Phase Mosfet
(Note 5)
Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2.
Internal NTC – Thermistor Characteristics (IRSM505-015 Only)
Symbol
Description
Min
Typ
Max
Units
R25
Resistance
---
47
---
kΩ
TC=25°C, ±5% tolerance
R125
Resistance
---
1.41
---
kΩ
TC=125°C
B
B-constant (25-50°C)
---
4050
---
K
±2% tolerance (Note 6)
-40
---
125
°C
Temperature Range
Note 6: See application notes for usage
4
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Conditions
January 21, 2020
IRSM505-015
IRSM515-015 Series
Qualification Information†
Qualification Level
Industrial††
Moisture Sensitivity Level
MSL3†††
RoHS Compliant
Yes
UL Certified
Yes – File Number E252584
Machine Model
Class B
Human Body Model
Class 2
ESD
†
Qualification standards can be found at International Rectifier’s web site http://www.infineon.com/
††
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
†††
SOP23 package only. Higher MSL ratings may be available for the specific package types listed here. Please
contact your International Rectifier sales representative for further information.
5
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Module Pin-Out Description
Pin
1
Name
COM
Description
Logic Ground
2
VB1
High Side Floating Supply Voltage 1
3
VCC1
15V Supply 1
4
HIN1
Logic Input for High Side Gate Driver - Phase 1
5
LIN1
Logic Input for Low Side Gate Driver - Phase 1
6
NC
Not Connected
7
VB2
High Side Floating Supply Voltage 2
8
VCC2
15V Supply 2
9
HIN2
Logic Input for High Side Gate Driver - Phase 2
10
LIN2
Logic Input for Low Side Gate Driver - Phase 2
VTH
Thermistor Output (IRSM505-015DA)
NC
Not Connected (IRSM515-015DA)
12
VB3
High Side Floating Supply Voltage 3
13
VCC3
15V Supply 3
14
HIN3
Logic Input for High Side Gate Driver - Phase 3
15
LIN3
Logic Input for Low Side Gate Driver - Phase 3
16
NC
Not Connected
17
V+
DC Bus Voltage Positive
18
U/VS1
Output - Phase 1, High Side Floating Supply Offset 1
19
VR1
Phase 1 Low Side Source
20
VR2
Phase 2 Low Side Source
21
V/VS2
Output - Phase 2, High Side Floating Supply Offset 2
22
VR3
Phase 3 Low Side Source
23
W/VS3
Output - Phase 3, High Side Floating Supply Offset 2
11
16
15
14
13
12
11
9
10
8
7
6
0
4
3
2
1
A 0123-412W
IRSM505-015PA
23
22
21
20
19
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18
17
6
© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Referenced Figures
VCE
IC
IC
VCE
HIN /LIN
50%
HIN /LIN
90 % IC
90 % IC
50%
VCE
50%
HIN /LIN
HIN /LIN
50%
VCE
10 % IC
10 % IC
tr
tf
TON
TOFF
Figure 1a: Input to Output propagation turn-on
delay time.
Figure 1b: Input to Output propagation turn-off
delay time.
IF
VCE
HIN /LIN
Irr
trr
Figure 1c: Diode Reverse Recovery.
Figure 1: Switching Parameter Definitions
14.5mm
3.8mm
TC
Top View
Figure 2: TC measurement point for Rth(j-C)
7
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Application Notes
A basic application schematic is shown below.
VB2
VB1
VB3
IRSM505-015x
VBUS
2M
VCC
XTAL0
XTAL1
SPD-REF
AIN2
HIN1
PWMVH
HIN2
PWMWH
HIN3
PWMUL
LIN1
PWMVL
LIN3
+
GATEKILL
-
AIN1
VDD
7.50k
3V
IFB+
VTH
IFBVDDCAP
U, VS1
V, VS2
W, VS3
LIN2
PWMWL
IRMCF171
Power
Supply
HVICs
PWMUH
COM
6.04k
IFBO
VSS
1nF
7.68k
4.87k
0.25
Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W
A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is
available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC.
“Reference design kits are available on www.infineon.com/ipm website”
Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC
8
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Figures 5-7 show the typical current capability for this module at specified conditions. In all tests, the application
board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow.
Figure 5 is derived from using a heat sink that maintains TC at 125°C. Figures 6-7 represent current capability for
the module as used without any heat sink. ∆TJA represents the difference in temperature between the junction of
the high-side V-phase Mosfet and the ambient, measured 10cm above and 6cm away from the board. Ambient
temperature kept within 28-29°C.
800
RMS Phase Current (mA)
700
600
500
400
3-Phase Modulation
2-Phase Modulation
300
200
100
0
6
8
10
12
14
Carrier Frequency (kHz)
16
18
20
Figure 5: Maximum sinusoidal phase current vs PWM switching frequency with a heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=150°C, TC=125°C
400
RMS Phase Current (mA)
350
300
250
200
3-Phase Modulation
2-Phase modulation
150
100
50
0
6
8
10
12
14
Carrier Frequency (kHz)
16
18
20
Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=128°C
9
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IRSM505-015
IRSM515-015 Series
350
RMS Phase Current (mA)
300
250
200
3-Phase Modulation
150
2-Phase Modulation
100
50
0
6
8
10
12
14
Carrier Frequency (kHz)
16
18
20
Figure 7: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=320V, TA=28°C, TJ=98°C
The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the
temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises.
The NTC resistance can be calculated at any temperature as follows:
𝑅𝑅𝑇𝑇𝑇𝑇 = 𝑅𝑅25 𝑒𝑒
1
1
−
��
𝑇𝑇𝑇𝑇𝑇𝑇 𝑇𝑇25
�𝐵𝐵�
, where 𝑅𝑅25 is 47kΩ and 𝐵𝐵 is 4050K
An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as
shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 8 below. The
min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on
the B-parameter.
Figure 9 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for
a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C.
10
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IRSM505-015
IRSM515-015 Series
14.0
min
12.0
typical
max
10.0
VTH (V)
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
TTH (°C)
Figure 8: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor.
A 15V, 1% variation in VCC is assumed.
140
120
TTH (°C
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100 110 120 130 140 150 160
TJ (°C)
Figure 9: TTH vs TJ for a module without a heat sink. VCC=15.4V, R=7.50kΩ
11
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January 21, 2020
IRSM505-015
IRSM515-015 Series
SOP23 Package Outline
Dimensions in mm
12
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January 21, 2020
IRSM505-015
IRSM515-015 Series
DIP23A Package Outline
Dimensions in mm
13
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
DIP23 Package Outline
Dimensions in mm
14
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Top Marking
A 0123-412P
IRSM505-015PA
Marking Code
Date Code
P = Pb Free; Y = Engineering Samples
YWW format, where Y = least significant digit of the production year , WW = two digits
representing the week of the production year
Revision History:
•
July 2014 - Corrected Figure 1 to show positive logic
•
Jan 2020 - Updated the part table on page 1. OPNs are no longer listed in the
datasheet, updated headers, footers and disclaimers on datasheet.
15
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© 2020 Infineon Technologies
January 21, 2020
IRSM505-015
IRSM515-015 Series
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2019-08-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2019 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
16
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For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
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of
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Technologies, Infineon Technologies’ products may
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© 2020 Infineon Technologies
January 21, 2020