IRSM515-055DA

IRSM505-055 IRSM515-055 Series 1.7Ω, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM505-055 and IRSM515-055 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a familiar package. The modules are optimized for low EMI characteristics. IRSM505-055 includes temperature feedback while IRSM515-055 does not. Features • • • • • • • • • • • • • 500V 3-phase inverter including high voltage gate drivers Integrated bootstrap functionality Low 1.7Ω (max, 25°C) RDS(on) Trench FREDFET Under-voltage lockout for all channels Matched propagation delay for all channels Temperature feedback via NTC (IRSM505-055 only) Optimized dV/dt for loss and EMI trade offs Open-source for single and leg-shunt current sensing 3.3V logic compatible & advanced input filter Driver tolerant to negative transient voltage (-Vs) Isolation 1900VRMS, 1min RoHS Compliant Certified by UL - File Number E252584 Standard Pack Series NTC IRSM505-055 IRSM515-055 1 www.infineon.com Yes No Package Type Product Name Form Quantity SOP23 Tube 240 IRSM505-055PA DIP23 Tube 240 IRSM505-055DA DIP23A Tube 240 IRSM505-055DA2 SOP23 Tube 240 IRSM515-055PA DIP23 Tube 240 IRSM515-055DA DIP23A Tube 240 IRSM515-055DA2 © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Internal Electrical Schematic 1 COM 17 V+ 1 COM 2 VB1 2 VB1 3 VCC1 3 VCC1 4 HIN1 5 LIN1 Half-Bridge HVIC 18 U/VS1 Integrated in HVIC 7 VB2 20 VR2 8 VCC2 9 HIN2 10 LIN2 21 V/VS2 Half-Bridge HVIC 6 NC 18 U/VS1 19 VR1 Integrated in HVIC 7 VB2 20 VR2 9 HIN2 21 V/VS2 Half-Bridge HVIC 10 LIN2 11 NC 12 VB3 12 VB3 22 VR3 13 VCC3 15 LIN3 Half-Bridge HVIC 8 VCC2 11 VTH 14 HIN3 4 HIN1 5 LIN1 19 VR1 6 NC 17 V+ Half-Bridge HVIC 23 W/VS3 22 VR3 13 VCC3 14 HIN3 Half-Bridge HVIC 15 LIN3 16 NC 23 W/VS3 16 NC IRSM505-055 IRSM515-055 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. Symbol Description Min Max Unit BVDSS MOSFET Blocking Voltage --- 500 V IO @ TC=25°C DC Output Current per MOSFET --- 2.4 IOP @ TC =25°C Pulsed Output Current per MOSFET (Note 1) --- 15 Pd @ TC=25°C Maximum Power Dissipation per MOSFET --- 18 W VISO Isolation Voltage (1min) --- 1900 VRMS TJ Operating Junction Temperature -40 150 °C TC Operating Case Temperature -40 150 °C TS Storage Temperature -40 150 °C VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High Side Floating Supply Voltage -0.3 525 V -0.3 25 V COM -0.3 VCC+0.3 V VCC Low Side and Logic Supply voltage VIN Input Voltage of LIN, HIN A Note 1: Pulse Width = 100µs, Single Pulse 2 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Recommended Operating Conditions Symbol Description Min V+ Positive DC Bus Input Voltage VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 Max Unit --- 400 V (Note 2) 400 V High Side Floating Supply Voltage VS+12 VS+20 V VCC Low Side and Logic Supply Voltage 13.5 16.5 V VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT 0 5 V Fp PWM Carrier Frequency --20 Note 2: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS. kHz Static Electrical Characteristics (VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS. Symbol Description Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 500 --- --- V TJ=25°C, ILK=250µA ILKH Leakage Current of High Side FET 12 µA TJ=25°C, VDS=500V ILKL Leakage Current of Low Side FET Plus Gate Drive IC 14 µA TJ=25°C, VDS=500V --- 1.3 1.7 Ω TJ=25°C, VCC=15V, Id = 1.2A --- 3.2 --- Ω TJ=150°C, VCC=15V, Id = 1A (Note 3) TJ=25°C, VCC=15V, ID=1.2A RDS(on) Drain to Source ON Resistance VSD Mosfet Body Diode Forward Voltage --- 0.8 --- V VIN,th+ Positive Going Input Threshold 2.2 --- --- V VIN,th- Negative Going Input Threshold --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS Supply Under-Voltage, Positive Going Threshold 8 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 6.9 7.7 8.5 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock-Out Hysteresis --- 1.2 --- V IQBS Quiescent VBS Supply Current VIN=0V --- 45 60 µA IQBS, ON Quiescent VBS Supply Current VIN=4V --- 45 60 µA IQCC Quiescent VCC Supply Current VIN=0V --- 1.8 4 mA IQCC, ON Quiescent VCC Supply Current VIN=4V --- 1.9 4 mA IIN+ Input Bias Current VIN=4V --- 5.7 18 µA VIN=3.3V IIN- Input Bias Current VIN=0V --- --- 2 µA VIN=0V RBR Internal Bootstrap Equivalent Resistor Value --- 250 --- Ω TJ=25°C Note 3: Characterized, not tested at manufacturing 3 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Dynamic Electrical Characteristics (VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. Symbol Description Min Typ Max Units TON Input to Output Propagation Turn-On Delay Time --- 0.8 1.5 µs TOFF Input to Output Propagation Turn-Off Delay Time --- 0.9 1.5 µs TFIL,IN Input Filter Time (HIN, LIN) 200 300 --- ns DT Deadtime Inserted --- 400 --- ns EON Turn-on switching energy loss --- 32 --- µJ EOFF Turn-off switching energy loss --- 6 --- µJ EREC Recovery energy loss --- 5 --- µJ EON,150 Turn-on switching energy loss --- 59 --- µJ EOFF,150 Turn-off switching energy loss --- 7 --- µJ --- 12 --- µJ Conditions ID=120mA, V+=30V See Fig.1 EREC,150 Recovery energy loss Note 4: Characterized, not tested at manufacturing VIN=0 & VIN=3.3V VIN=0 & VIN=3.3V without external deadtime V+=320V, ID=0.5A, L=40mH, TC=25°C (Note 4) V+=320V, ID=0.5A, L=40mH, TC=150°C (Note 4) Thermal and Mechanical Characteristics Symbol Description Rth(J-C) Junction to Case Thermal Resistance Min Typ Max Units Conditions --- 6.8 --- °C/W High Side V-Phase Mosfet (Note 5) Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2. Internal NTC – Thermistor Characteristics (IRSM505-055 Only) Symbol Description Min Typ Max Units R25 Resistance --- 47 --- kΩ TC=25°C, ±5% tolerance R125 Resistance --- 1.41 --- kΩ TC=125°C B B-constant (25-50°C) --- 4050 --- K ±2% tolerance (Note 6) -40 --- 125 °C Temperature Range Note 6: See application notes for usage 4 www.infineon.com © 2020 Infineon Technologies Conditions January 21, 2020 IRSM505-055 IRSM515-055 Series Qualification Information† Qualification Level Industrial†† Moisture Sensitivity Level MSL3††† RoHS Compliant Yes UL Certified Yes – File Number E252584 Machine Model Class B Human Body Model Class 2 ESD † Qualification standards can be found at International Rectifier’s web site http://www.infineon.com/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† SOP23 package only. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. 5 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Module Pin-Out Description Pin 1 Name COM Description Logic Ground 2 VB1 High Side Floating Supply Voltage 1 3 VCC1 15V Supply 1 4 HIN1 Logic Input for High Side Gate Driver - Phase 1 5 LIN1 Logic Input for Low Side Gate Driver - Phase 1 6 NC Not Connected 7 VB2 High Side Floating Supply Voltage 2 8 VCC2 15V Supply 2 9 HIN2 Logic Input for High Side Gate Driver - Phase 2 10 LIN2 Logic Input for Low Side Gate Driver - Phase 2 VTH Thermistor Output (IRSM505-055DA) NC Not Connected (IRSM515-055DA) 12 VB3 High Side Floating Supply Voltage 3 13 VCC3 15V Supply 3 14 HIN3 Logic Input for High Side Gate Driver - Phase 3 15 LIN3 Logic Input for Low Side Gate Driver - Phase 3 16 NC Not Connected 17 V+ DC Bus Voltage Positive 18 U/VS1 Output - Phase 1, High Side Floating Supply Offset 1 19 VR1 Phase 1 Low Side Source 20 VR2 Phase 2 Low Side Source 21 V/VS2 Output - Phase 2, High Side Floating Supply Offset 2 22 VR3 Phase 3 Low Side Source 23 W/VS3 Output - Phase 3, High Side Floating Supply Offset 2 11 16 15 14 13 12 11 10 9 8 7 6 0 4 3 2 1 A 0123-412W IRSM505-055PA 23 © 2020 Infineon Technologies 22 21 20 19 www.infineon.com 18 17 6 January 21, 2020 IRSM505-055 IRSM515-055 Series Referenced Figures VCE IC IC VCE HIN /LIN 50% HIN /LIN 90 % IC 90 % IC 50% VCE 50% HIN /LIN HIN /LIN 50% VCE 10 % IC 10 % IC tr tf TON TOFF Figure 1a: Input to Output propagation turn-on delay time. Figure 1b: Input to Output propagation turn-off delay time. IF VCE HIN /LIN Irr trr Figure 1c: Diode Reverse Recovery. Figure 1: Switching Parameter Definitions 14.5mm 3.8mm TC Top View Figure 2: TC measurement point for Rth(j-C) 7 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Application Notes A basic application schematic is shown below. VB2 VB1 VB3 IRSM505-055xA VBUS 2M VCC XTAL0 XTAL1 SPD-REF AIN2 HIN1 PWMVH HIN2 PWMWH HIN3 PWMUL LIN1 PWMVL LIN2 PWMWL + GATEKILL - AIN1 VDD 7.50k 3V VTH IFB+ IFB- VDDCAP U, VS1 V, VS2 W, VS3 LIN3 IRMCF171 Power Supply HVICs PWMUH COM 6.04k IFBO VSS 1nF 7.68k 4.87k 0.25 Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC. “Reference design kits are available on www.infineon.com/ipm website” Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC 8 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Figures 5-7 show the typical current capability for this module at specified conditions. In all tests, the application board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow. Figure 5 is derived from using a heat sink that maintains TC at 125°C. Figures 6-7 represent current capability for the module as used without any heat sink. ∆TJA represents the difference in temperature between the junction of the high-side V-phase Mosfet and the ambient, measured 10cm above and 6cm away from the board. Ambient temperature kept within 28-29°C. 1600 RMS Phase Current (mA) 1400 1200 1000 800 3-Phase Modulation 2-Phase Modulation 600 400 200 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 5: Maximum sinusoidal phase current vs PWM switching frequency with a heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=150°C, TC=125°C 700 RMS Phase Current (mA) 600 500 400 3-Phase Modulation 300 2-Phase modulation 200 100 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=128°C 9 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series 600 RMS Phase Current (mA) 500 400 300 3-Phase Modulation 2-Phase Modulation 200 100 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 7: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=98°C The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises. The NTC resistance can be calculated at any temperature as follows: 𝑅𝑅𝑇𝑇𝑇𝑇 = 𝑅𝑅25 𝑒𝑒 1 1 − �� 𝑇𝑇𝑇𝑇𝑇𝑇 𝑇𝑇25 �𝐵𝐵� , where 𝑅𝑅25 is 47kΩ and 𝐵𝐵 is 4050K An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 8 below. The min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on the B-parameter. Figure 9 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C. 10 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series 14.0 min 12.0 typical max 10.0 VTH (V) 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TTH (°C) Figure 8: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor. A 15V, 1% variation in VCC is assumed. 140 120 TTH (°C 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 TJ (°C) Figure 9: TTH vs TJ for a module without a heat sink. VCC=15.4V, R=7.50kΩ 11 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series SOP23 Package Outline Dimensions in mm 12 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series DIP23A Package Outline Dimensions in mm 13 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series DIP23 Package Outline Dimensions in mm 14 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Top Marking A 0123-412P IRSM505-055PA Marking Code Date Code P = Pb Free; Y = Engineering Samples YWW format, where Y = least significant digit of the production year , WW = two digits representing the week of the production year Revision History : • Nov 2014 Corrected logic in Figure 1. Added UL certification note. • Jan 2020 Updated the part table on page 1. OPNs are no longer listed in the datasheet. Updated headers, footers and disclaimers on datasheet. 15 www.infineon.com © 2020 Infineon Technologies January 21, 2020 IRSM505-055 IRSM515-055 Series Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-08-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 16 www.infineon.com © 2020 Infineon Technologies For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. January 21, 2020