IRSM808-204MHTR

IRSM808-204MH Half-Bridge IPM for Small Appliance Motor Drive Applications 20A, 250V Description IRSM808-204MH is a 20A, 250V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in an isolated package. This advanced IPM offers a combination of IR's low RDS(on) Trench MOSFET technology and the industry benchmark half-bridge high voltage, rugged driver in a small PQFN package. At only 8x9mm and featuring integrated bootstrap functionality, the compact footprint of this surface-mount package makes it suitable for applications that are space-constrained. IRSM808-204MH functions without a heat sink. Features            Integrated gate drivers and bootstrap functionality Suitable for sinusoidal modulation applications Low 0.15Ω RDS(on) (max, 25°C) Trench MOSFET Under-voltage lockout for both channels Matched propagation delay for all channels Optimized dV/dt for loss and EMI trade offs 3.3V input logic compatible Active high HIN and active low LIN Motor Power range 80-200W Isolation 1500VRMS min ROHS compliant IRSM808-204MH Internal Electrical Schematic VB IRSM808-204MH V+ VCC HIN LIN Vs Half bridge driver with built in bootstrap DT V- COM Ordering Information 1 Orderable Part Number Package Type Form Quantity IRSM808-204MH PQFN 8x9mm Tray 1300 IRSM808-204MHTR PQFN 8x9mm Tape and Reel 2000 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to V SS unless otherwise stated in the table. The thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit BVDSS MOSFET Blocking Voltage --- 250 V IO Output DC Current per MOSFET @ TC=25°C (Note1) --- 20 A Pd Power dissipation per MOSFET @ TC=100°C (Note1) --- 38 W TJ (MOSFET & IC) Maximum Operating Junction Temperature --- 150 °C TL Lead temperature (soldering 30 seconds) --- 260 °C TS Storage Temperature Range -40 150 °C VB High side floating supply voltage -0.3 VS + 20 V VS High side floating supply offset voltage VB - 20 VB +0.3 V VCC Low Side fixed supply voltage -0.3 20 V VIN Logic input voltage LIN, HIN -0.3 VCC+0.3 V VISO Isolation voltage (1min) (Note2) --- 1500 VRMS Note1: Calculated based on maximum junction temperature. Bond wires current limit is 8A. Note2: Characterized, not tested at manufacturing Reccomended Operating Conditions Symbol V + Description Positive DC Bus Input Voltage Min Typ Max Units --- --- 200 V VS1,2,3 High Side Floating Supply Offset Voltage (Note 3) --- 200 V VB1,2,3 High Side Floating Supply Voltage VS+12 --- VS+20 V VCC Low Side and Logic Supply Voltage 13.5 --- 16.5 V VIN Logic Input Voltage COM --- VCC V Fp PWM Carrier Frequency --- --- 20 kHz Conditions For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Note 3: Logic operational for Vs from COM-8V to COM+250V. Logic state held for Vs from COM-8V to COM-VBS. 2 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Static Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM Symbol Description Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage 250 --- --- V TJ=25°C, ILK=250µA ILKH Leakage Current of High Side FET’s in Parallel --- 15 --- µA TJ=25°C, VDS=250V ILKL Leakage Current of Low Side FET’s in Parallel Plus Gate Drive IC --- 20 --- µA TJ=25°C, VDS=250V --- 0.13 0.15 RDS(ON) Drain to Source ON Resistance TJ=25°C, VCC=10V, Id=6A Ω --- 0.35 --- Conditions VSD Diode Forward Voltage --- 0.85 --- V VHIN/LIN Logic “1” input voltage for HIN & “0” for LIN 2.2 --- --- V VHIN/LIN Logic “0” input voltage for HIN & “1” for LIN --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS Supply Under-Voltage, Positive Going Threshold 8 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 7.4 8.2 9.0 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock-Out Hysteresis --- 0.7 --- V IQBS Quiescent VBS Supply Current VIN=0V --- 45 70 µA IQCC Quiescent VCC Supply Current VIN=0V --- 1100 3000 µA IHIN+ Input Bias Current VIN=4V --- 5 20 µA ILIN- Input Bias Current VIN=0V --- 1 2 µA RBR Internal Bootstrap Equivalent Resistor Value --- 200 --- Ω Min Typ Max Units --- 430 --- mJ TJ=150°C, VCC=10V, Id=6A (Note 4) TJ=25°C, VCC=10V, Id=6A TJ=25°C Note 4: Characterized, not tested at manufacturing MOSFET Avalanche Characteristics Symbol Description EAS Single Pulse Avalanche Energy 3 www.irf.com © 2015 International Rectifier Conditions TJ=25°C, L=3mH, VDD=150V, IAS=10A, TO220 package. February 12, 2015 IRSM808-204MH Dynamic Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified. Symbol Description Min Typ Max Units TON Input to Output Propagation TurnOn Delay Time --- 0.8 1.3 µs TOFF Input to Output Propagation TurnOff Delay Time --- 0.8 1.3 µs DT Built-in Deadtime 0.9 1.3 --- µs TFIL,IN Input Filter Time (HIN, LIN) --- 300 --- ns Min Typ Max Units --- 1.3 --- °C/W Conditions + ID=1mA, V =50V Gate Driver; VLIN=0 & VHIN=5V with no external deadtime Thermal and Mechanical Characteristics Symbol Description Rth(J-B) Thermal resistance, junction to mounting pad, each MOSFET Conditions Input-Output Logic Level Table V+ Ho HIN Gate Driver IC U/V/W Lo LIN HIN LIN U,V,W HI HI V+ LO LO 0 HI LO ** LO HI * * V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding ** Shoot-through condition 4 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Qualification Information† †† Qualification Level Industrial Moisture Sensitivity Level MSL3 ††† (per JEDEC JESD47) (per IPC/JEDEC J-STD-020) Machine Model Class B (per JESD22-A115) Human Body Model Class 1C (per JESD22-A114) ESD RoHS Compliant Yes † †† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. Module Pin-Out Description Pin 1, 4, 7, 32 2 3 Name COM VCC HIN 5 6 8, 9, 10 11 – 19 20 – 28 29 – 30 31 LIN DT VVS V+ VS VB Description Low Side Gate Drive Return 15V Gate Drive Supply Logic Input for High Side (Active High) Logic Input for Low Side (Active Low) Dead time Low Side Source Connection Phase Output DC Bus Phase Output (-ve Bootstrap Cap Connection) High Side Floating Supply (+ve Bootstrap Cap Connection) 7 6 5 4 3 2 1 8 31 9 30 32 10 29 11 28 12 27 13 26 14 25 15 24 16 23 17 18 19 20 21 22 Exposed pad (Pin 32) has to be connected to COM for better electrical performance 5 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Typical Application Connection IRSM808-204MH VBUS HVIC XTAL0 UH UL VH XTAL1 SPD-REF AIN2 HVIC HVIC VCC VB VCC VB HIN HO VH HIN HO WH HIN HO LIN VS VL LIN VS WL LIN VS COM LO COM LO COM LO U VCC V VB W VL WH WL IRSM808-204MH GATEKILL IRMCK171 Power Supply VDD VDDCAP VSS VDD AIN1 . CS_U+ CS_V+ Figure 1: Typical Application Connection 1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide a good decoupling between VCC-VSS and VB-VS terminals, the capacitors shown connected at these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1uF, are recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR Design tip DT04-4 or application note AN-1044. 6 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Package Outline IRSM808-204MH (Bottom View), 1 of 2 Dimensions in mm 7 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Package Outline IRSM808-204MH (Bottom View), 2 of 2 Dimensions in mm 8 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Package Outline IRSM808-204MH (Top & Side View) Dimensions in mm 9 www.irf.com © 2015 International Rectifier February 12, 2015 IRSM808-204MH Top Marking IRSM808-204MH Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 10 www.irf.com © 2015 International Rectifier February 12, 2015