IRSM836-035MB

IRSM836-035MB 3A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-035MB is a 3A, 500V Integrated Power Module (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance AC motor-driver in an isolated package. This advanced IPM offers a combination of IR's low RDS(on) Trench MOSFET technology and the industry benchmark 3-phase high voltage, rugged driver in a small PQFN package. At only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surfacemount package makes it suitable for applications that are space-constrained. Integrated over-current protection, fault reporting and under-voltage lockout functions deliver a high level of protection and fail-safe operation. IRSM836-035MB functions without a heat sink. Features • • • • • • • • • • • Integrated gate drivers and bootstrap functionality Suitable for single shunt sensing Protection shutdown pin Low RDS(on) Trench FREDFET Under-voltage lockout for all channels Matched propagation delay for all channels Optimized dV/dt for loss and EMI trade offs 3.3V Schmitt-triggered active high input logic Cross-conduction prevention logic Motor power range up to ~110W, without heat sink Isolation 1500VRMS min Base Part Number Package Type IRSM836-035MB 27L PQFN 12 x 12 mm IRSM836-035MB Standard Pack Orderable Part Number Form Quantity Tape and Reel 2000 IRSM836-035MBTR Tray 800 IRSM836-035MB All part numbers are PbF 1 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Internal Electrical Schematic VB1 VB2 VB3 IRSM836-035MB V+ VCC HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FAULT ITRIP EN RCIN U, VS1 V, VS2 W, VS3 600V 3-Phase Driver HVIC COM V- VSS Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. Symbol Description Min Max Unit V BVDSS MOSFET Blocking Voltage --- 500 IO @ T=25°C DC Output Current per MOSFET --- 3 IOP Pulsed Output Current (Note 1) --- 20 Pd @ TC=25°C Maximum Power Dissipation per MOSFET --- 36 W VISO Isolation Voltage (1min) (Note 2) --- 1500 VRMS TJ Operating Junction Temperature -40 150 °C TL Lead Temperature (Soldering, 30 seconds) --- 260 °C TS Storage Temperature -40 150 °C VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High Side Floating Supply Voltage -0.3 500 V VCC Low Side and Logic Supply voltage -0.3 20 V VSS -0.3 VCC+0.3 V VIN Input Voltage of LIN, HIN, ITRIP, EN, RCIN, FLT Note 1: Pulse Width = 100µs, TC =25°C, Duty=1%. Note 2: Characterized, not tested at manufacturing 2 www.irf.com © 2013 International Rectifier A February 3, 2013 IRSM836-035MB Recommended Operating Conditions Symbol Description V+ Positive DC Bus Input Voltage Min Max Unit --- 400 V VS1,2,3 High Side Floating Supply Offset Voltage (Note 3) 400 V VB1,2,3 High Side Floating Supply Voltage VS+12 VS+20 V VCC Low Side and Logic Supply Voltage 13.5 16.5 V VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT 0 5 V Fp PWM Carrier Frequency --- 20 kHz The Input/Output logic diagram is shown in Figure 1. For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Note 3: Logic operational for Vs from COM-5V to COM+250V. Logic state held for Vs from COM-5V to COM-VBS. Static Electrical Characteristics o (VCC-COM) = (VB-VS) = 15 V. TA = 25 C unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. The VCCUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS. Symbol Description Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage 500 --- --- V TJ=25°C, ILK=250µA ILKH Leakage Current of High Side FET’s in Parallel 10 µA TJ=25°C, VDS=500V ILKL Leakage Current of Low Side FET’s in Parallel Plus Gate Drive IC 15 µA TJ=25°C, VDS=500V RDS(ON) Drain to Source ON Resistance --- 1.85 2.2 Ω TJ=25°C, VCC=15V, Id = 1A VIN,th+ Positive Going Input Threshold 2.5 --- --- V VIN,th- Negative Going Input Threshold --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS Supply Under-Voltage, Positive Going Threshold 8 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 7.4 8.2 9 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock-Out Hysteresis --- 0.7 --- V IQBS Quiescent VBS Supply Current VIN=0V --- --- 125 µA IQCC Quiescent VCC Supply Current VIN=0V --- --- 3.35 mA IQCC, ON Quiescent VCC Supply Current VIN=4V --- --- 10 mA IIN+ Input Bias Current VIN=4V --- 100 160 µA IIN- Input Bias Current VIN=0V --- -- 1 µA ITRIP+ ITRIP Bias Current VITRIP=4V --- 5 40 µA ITRIP- ITRIP Bias Current VITRIP=0V --- -- 1 µA VIT, TH+ ITRIP Threshold Voltage 0.37 0.46 0.55 V VIT, TH- ITRIP Threshold Voltage --- 0.4 --- V 3 www.irf.com Conditions © 2013 International Rectifier February 3, 2013 IRSM836-035MB VIT, HYS ITRIP Input Hysteresis --- 0.06 --- V RBR Internal Bootstrap Equivalent Resistor Value --- 200 --- Ω VRCIN,TH RCIN Positive Going Threshold --- 8 --- V RON,FAULT FAULT Open-Drain Resistance --- 50 100 Ω Min Typ Max Units 0.7 1.5 µs TJ=25°C Note 4: Characterized, not tested at manufacturing Dynamic Electrical Characteristics o (VCC-COM) = (VB-VS) = 15 V. TA = 25 C unless otherwise specified. Symbol Description Conditions TON Input to Output Propagation Turn-On Delay Time --- TOFF Input to Output Propagation Turn-Off Delay Time --- 0.7 1.5 µs TFIL,IN Input Filter Time (HIN, LIN) 200 330 --- ns VIN=0 & VIN=4V TFIL,EN Input Filter Time (EN) 100 200 --- ns VIN=0 & VIN=4V TBLT-ITRIP ITRIP Blanking Time 100 330 ns VIN=0 & VIN=4V, VI/Trip=5V TFAULT Itrip to Fault --- 600 1000 ns VIN=0 & VIN=4V TEN EN Falling to Switch Turn-Off 700 1000 ns VIN=0 & VIN=4V TITRIP ITRIP to Switch Turn-Off Propagation Delay 950 1300 ns ID=1A, V =50V, See Figure 3 + ID=1mA, V =50V See Fig.2 --- + MOSFET Avalanche Characteristics Symbol Description EAS Single Pulse Avalanche Energy Min Typ Max Units Conditions TJ=25°C, L=93mH, VDD=150V, ITEST=1.8A, TO-220 package --- 150 --- mJ Min Typ Max Units Conditions Thermal and Mechanical Characteristics Symbol Description Rth(J-CT) Total Thermal Resistance Junction to Case Top --- 27.4 --- °C/W One device Rth(J-CB) Total Thermal Resistance Junction to Case Bottom --- 2.2 --- °C/W One device 4 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Qualification Information† †† Qualification Level Industrial (per JEDEC JESD 47E) Moisture Sensitivity Level MSL3 (per IPC/JEDEC J-STD-020C) ††† Machine Model Class B (per JEDEC standard JESD22-A115) Human Body Model Class 2 (per standard ESDA/JEDEC JS-001-2012) ESD RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. 5 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Input/ Output Pin Equivalent Circuit Diagrams VB ESD Diode 20 V Clamp HO ESD Diode V CC HIN, LIN, or EN VS ESD Diode 600 V VCC 20 V Clamp ESD Diode 33k ESD Diode 25 V Clamp VSS LO ESD Diode COM VCC VCC ESD Diode ESD Diode RCIN or FAULT ITRIP ESD Diode VSS 6 www.irf.com ESD Diode 1M VSS © 2013 International Rectifier February 3, 2013 IRSM836-035MB Input-Output Logic Level Table V+ Ho Hin1,2,3 Gate Driver IC U, V, W Lo Lin1,2,3 EN Itrip Hin1,2,3 Lin1,2,3 U,V,W 1 0 1 0 V+ 1 0 0 1 0 1 0 0 0 off 1 1 X X off 0 X X X off HIN1,2,3 LIN1,2,3 ITRIP U,V,W Figure 1: Input/Output Logic Diagram 7 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB ID VDS ID VDS 90% ID 50% HIN /LIN 90% ID 50% VDS HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% ID 10% ID tf tr TON TOFF Figure 2a: Input to Output propagation turn-on delay time. Figure 2b: Input to Output propagation turn-off delay time. IF VDS HIN /LIN Irr trr Figure 2c: Diode Reverse Recovery. Figure 2: Switching Parameter Definitions 8 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% TITRIP TFLT-CLR Figure 3: ITRIP Timing Waveform 9 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Module Pin-Out Description Pin Name Description 1 HIN3 Logic Input High Side Gate Driver - Phase 3 2 LIN1 Logic Input Low Side Gate Driver - Phase 1 3 LIN2 Logic Input Low Side Gate Driver - Phase 2 4 LIN3 Logic Input Low Side Gate Driver - Phase 3 5 /FLT Fault Output 6 ITRIP Current Protection Pin 7 EN Enable Pin 8 RCIN RCIN Reset Programming Pin 9 10, 11, 21, 28 12, 13, 29 VSS Negative Main Supply U,VS1 Output 1 - High Side Floating Supply Offset Voltage V,VS2 Output 2 - High Side Floating Supply Offset Voltage 14, 15 16, 17, 30, 31 18, 19, 20 W,VS3 Output 3 - High Side Floating Supply Offset Voltage V- Negative Bus Input Voltage, COM V Positive Bus Input Voltage 22 VB1 High Side Floating Supply voltage 1 23 VB2 High Side Floating Supply voltage 2 24 VB3 High Side Floating Supply Voltage 3 25 VCC +15V Main Supply 26 HIN1 Logic Input High Side Gate Driver - Phase 1 27 HIN2 Logic Input High Side Gate Driver - Phase 2 + 17 16 18 19 Top View 20 15 14 29 21 28 22 13 12 23 24 30 31 25 26 27 1 10 www.irf.com 2 3 4 5 6 7 8 9 Notes Pin 28,29, 31 are not required to be connected electrically on the PCB All pins with the same name are internally connected. For example, pins 10, 11, 21 and 28 are internally connected. 10 11 © 2013 International Rectifier February 3, 2013 IRSM836-035MB Fault Reporting and Programmable Fault Clear Timer The IRSM836-035MB provides an integrated fault reporting output and an adjustable fault clear timer. There are two situations that would cause the IRSM836-035MB to report a fault via the FAULT pin. The first is an under-voltage condition of VCC and the second is when the ITRIP pin recognizes a fault. Once the fault condition occurs, the FAULT pin is internally pulled to VSS and the fault clear timer is activated. The fault output stays in the low state until the fault condition has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the FAULT pin will return to VCC. The length of the fault clear time period (tFLTCLR) is determined by exponential charging characteristics of the capacitor where the time constant is set by RRCIN and CRCIN. In Figure 4 where we see that a fault condition has occurred (UVLO or ITRIP), RCIN and FAULT are pulled to VSS, and once the fault has been removed, the fault clear timer begins. Figure 5 shows that RRCIN is connected between the VCC and the RCIN pin, while CRCIN is placed between the RCIN and VSS pins. V cc HIN (x 3) ITRIP VB ( x3 ) LIN (x 3) EN VRCIN tFLTCLR IRSM836-035MB VS (x 3 ) FAULT VCC R RCIN VRCIN,TH RCIN Time VSS ITRIP CRCIN VRx VSS VFAULT High Impedance State VSS Time I Figure 4: RCIN and FAULT pin waveforms - Figure 5: Programming the fault clear timer The design guidelines for this network are shown in Table 1. ≤1 nF CRCIN Ceramic 0.5 MΩ to 2 MΩ RRCIN >> RON,RCIN Table 1: Design guidelines The length of the fault clear time period can be determined by using the formula below.  V t FLTCLR = −(RRCIN CRCIN )ln1 − RCIN ,TH VCC  11 www.irf.com    © 2013 International Rectifier February 3, 2013 IRSM836-035MB Typical Application Connection IRSM836-035MB VB2 VB1 VB3 IRSM836-035MB VBUS 2M VCC XTAL0 XTAL1 SPD-REF AIN2 HIN1 PWMVH HIN2 PWMWH HIN3 PWMUL LIN1 PWMVL LIN2 PWMWL FAULT ITRIP 6.04k AIN1 VDD EN IFB+ IFB- VDDCAP U, VS1 V, VS2 W, VS3 LIN3 GATEKILL IRMCK171 Power Supply HVIC PWMUH 2M 6.04k IFBO VSS 7.68k RCIN VSS COM 1nF 4.87k 0.5 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on application note AN-1044. 4. PWM generator must be disabled within Fault duration to guarantee shutdown of the system. Overcurrent condition must be cleared before resuming operation. 12 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Current Capability in a Typical Application Figure 6 shows the current capability for this module at specified conditions. The current capability of the module is affected by application conditions including the PCB layout, ambient temperature, maximum PCB temperature, modulation scheme, PCB copper thickness and so on. The curves below were obtained from measurements carried out on the IRMCS1171 reference design board which includes the IRSM836-035MB and IR’s IRMCK171 digital control IC. 320V, ΔTca = 70 °C 500 450 RMS Current (mA) 400 350 300 250 200 150 1oz, 2ph 1oz, 3ph 2oz, 2ph 2oz, 3ph 100 50 0 5 20 320V, ΔTca = 40 °C 500 450 1oz, 2ph 1oz, 3ph 2oz, 2ph 2oz, 3ph 400 RMS Current (mA) 10 15 Carrier Frequency (kHz) 350 300 250 200 150 100 50 0 5 10 15 Carrier Frequency (kHz) 20 Figure 6: Maximum Sinusoidal Phase Current vs. PWM Switching Frequency + Sinusoidal Modulation, V =320V, PF=0.95 13 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB PCB Example Figure 7 below shows an example layout for the application PCB. The effective area of the V+ top-layer copper plane is ~3cm² in this example. For an FR4 PCB with 1oz copper, Rth(J-A) is about 40°C/W. A lower Rth(J-A) can be achieved using thicker copper and/or additional layers. Module Figure 7: PCB layout example and corresponding thermal image At the module’s typical operating conditions, dV/dt of the phase node voltage is influenced by the load capacitance which includes parasitic capacitance of the PCB, MOSFET output capacitance and motor winding capacitance. To turn off the MOSFET, the load capacitance needs to be charged by the phase current. For the IRMCS1171 reference design, turn-off dV/dt ranges from 2 to 5 V/ns depending on the phase current magnitude. Turn-on dV/dt is influenced by PCB parasitic capacitance and motor winding capacitance and typically ranges from 4 to 6 V/ns. The MOSFET turn-on loss combined with the complimentary body diode reverse recovery loss comprises the majority of the total switching losses. Two-phase modulation can be used to reduce switching losses and run the module at higher phase currents. 14 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB 27L Package Outline IRSM836-035MB (Bottom View) Dimensions in mm 15 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB 27L Package Outline IRSM836-035MB (Bottom View) Dimensions in mm 16 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB 27L Package Outline IRSM836-035MB (Top and Side View) 17 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB 27L Top Marking IRSM836-035MB 18 www.irf.com © 2013 International Rectifier February 3, 2013 IRSM836-035MB Revision History January 30, 2013 Formatting corrections; added notes about what pins are internally connected; updated ordering table stating all parts are PbF. Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 19 www.irf.com © 2013 International Rectifier February 3, 2013