ISC007N04NM6ATMA1

ISC007N04NM6 MOSFET OptiMOSTM6Power-Transistor,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplication •OptimizedforSynchronousapplication •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated 1 FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Value Unit VDS 40 V RDS(on),max 0.7 mΩ ID 381 A Qoss 103 nC QG(0V..10V) 94 nC Type/OrderingCode Package ISC007N04NM6 PG-TDSON-8 FL Final Data Sheet Marking 07N04NM6 1 6 5 5 3 4 4 Productvalidation Parameter 2 7 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 381 269 48 - A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=50°C/W2) - 1524 A TA=25°C - - 674 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 188 3.0 W TC=25°C TA=25°C,RTHJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 0.8 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.3 2.8 V VDS=VGS,ID=1050µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.6 0.7 0.7 1.0 mΩ VGS=10V,ID=50A VGS=6V,ID=50A Gate resistance RG - 1.0 - Ω - Transconductance gfs - 310 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.8 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 6500 8400 pF VGS=0V,VDS=20V,f=1MHz Coss - 2100 2700 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 40 70 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 11.7 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 5.2 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 34.4 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 8.5 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 22 - nC VDD=20V,ID=50A,VGS=0to10V Qg(th) - 13 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 13 19 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 21 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 94 117 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 3.3 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 89 - nC VDS=0.1V,VGS=0to10V Qoss - 103 137 nC VDD=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 188 A TC=25°C - 1524 A TC=25°C - 0.79 1 V VGS=0V,IF=50A,Tj=25°C trr - 26.7 53.4 ns VR=20V,IF=50A,diF/dt=1000A/µs Qrr - 182.2 364.4 nC VR=20V,IF=50A,diF/dt=1000A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 200 400 175 350 150 300 125 250 ID[A] Ptot[W] Diagram1:Powerdissipation 100 200 75 150 50 100 25 50 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 103 10 µs 102 1 µs 100 100 µs 101 ZthJC[K/W] ID[A] 10 ms 1 ms 100 10-1 DC 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1600 1.2 8V 6V 1400 10 V 1.0 5V 4.5 V 1200 0.8 5V 800 4.5 V 600 RDS(on)[mΩ] ID[A] 1000 6V 0.6 8V 10 V 0.4 400 0.2 200 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 100 200 300 VDS[V] 400 500 600 700 800 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1500 2.00 25 °C 1.75 1250 1.50 1000 ID[A] 175 °C 750 RDS(on)[mΩ] 1.25 175 °C 1.00 0.75 500 25 °C 0.50 250 0.25 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.00 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.0 2.5 2.0 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 10500 µA 1.5 1050 µA 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 104 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 103 IF[A] C[pF] 103 102 102 Crss 101 0 5 10 15 20 25 30 35 40 101 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8V 20 V 32 V 8 25 °C 100 °C 101 VGS[V] IAV[A] 6 4 150 °C 100 100 101 102 103 tAV[µs] 2 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 44 43 VBR(DSS)[V] 42 41 40 39 38 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 04 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.00 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 3mm 2 EUROPEAN PROJECTION ISSUE DATE 05.11.2019 Figure1OutlinePG-TDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.0,2020-11-02 OptiMOSTM6Power-Transistor,40V ISC007N04NM6 PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 2 Final Data Sheet Outline Boardpads (TDSON-8 FL) 11 Rev.2.0,2020-11-02 OptiMOS TM 6 Power-Transistor , 40 V ISC007N04NM6 Revision History ISC007N04NM6 Revision: 2020-11-02, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-11-02 Release of final version Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 Rev. 2.0, 2020-11-02