ISC009N06LM5ATMA1

ISC009N06LM5 MOSFET OptiMOSTM5Power-Transistor,60V PG-TSON-8-3 8 7 Features 5 6 6 •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalperformance •N-channel •175°Crated •Pb-freeleadplating:RoHScompliant •Halogen-freeaccordingtoEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection 2 4 3 4 3 2 1 Drain Pin 5-8 FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 4 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.9 mΩ ID 348 A Qoss 127 nC QG(0V..4.5V) 77 nC *1 *1: Internal body diode Type/OrderingCode Package Marking RelatedLinks ISC009N06LM5 PG-TSON-8-3 009N06L - 1 8 Pin 1 Productvalidation Final Data Sheet 7 5 Source Pin 1-3 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 348 246 41 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RthJA=50°C/W2) - 1392 A TC=25°C - - 900 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 214 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.7 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area2) RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.3 V VDS=VGS,ID=147µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.75 0.9 0.90 1.1 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance1) RG - 2.5 - Ω - Transconductance gfs - 260 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Ciss - 10000 13000 pF VGS=0V,VDS=30V,f=1MHz Coss - 2000 2700 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 83 110 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 7 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 12 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 104 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 45 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Max. Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 25 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 17 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 22 - nC VDD=30V,ID=50A,VGS=0to4.5V Switching charge Qsw - 30 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge total Qg - 77 103 nC VDD=30V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=30V,ID=50A,VGS=0to4.5V Gate charge total1) Qg - 157 209 nC VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 145 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 127 - nC VDS=30V,VGS=0V 1) 1) 2) See Diagram 13 for more detailed information See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 173 A TC=25°C - 1392 A TC=25°C - 0.79 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 38 - ns VR=30V,IF=50A,diF/dt=400A/µs Qrr - 140 - nC VR=30V,IF=50A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD See Diagram 13 for more detailed information Final Data Sheet 5 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 240 400 200 300 ID[A] Ptot[W] 160 120 200 80 100 40 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 175 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 103 10 µs 102 100 µs 101 1 ms 100 ZthJC[K/W] ID[A] 150 TC[°C] DC 100 10-1 10 ms 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1400 3.0 5V 1200 10 V 2.8 V 2.5 4V 4.5 V 1000 3V RDS(on)[mΩ] ID[A] 800 3.5 V 600 2.0 1.5 3.5 V 400 1.0 3V 4V 4.5 V 200 5V 2.8 V 10 V 0 0 1 2 3 4 0.5 5 0 100 200 VDS[V] 300 400 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1400 2.4 1200 25 °C 2.0 800 RDS(on)[mΩ] 1000 ID[A] 175 °C 600 1.6 175 °C 1.2 400 0.8 25 °C 200 0 0 1 2 3 4 5 VGS[V] 0 4 8 12 16 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.4 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.4 1.6 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.6 1.2 1470 µA 147 µA 1.2 0.8 0.8 0.4 -75 -50 -25 0 25 50 75 100 125 150 0.4 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 25 °C, max 175 °C 175 °C, max 104 Ciss Coss IF[A] C[pF] 102 103 101 102 Crss 101 0 10 20 30 40 50 60 100 0.2 0.4 VDS[V] 0.8 1.0 1.2 1.4 1.6 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.6 IF=f(VSD);parameter:Tj 8 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 25 °C 6 VGS[V] IAV[A] 100 °C 101 4 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 140 160 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlinePG-TSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2021-03-08 OptiMOSTM5Power-Transistor,60V ISC009N06LM5 RevisionHistory ISC009N06LM5 Revision:2021-03-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-03-08 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2021-03-08