ISC011N06LM5ATMA1

ISC011N06LM5 MOSFET OptiMOSTM5Power-Transistor,60V PG-TDSON-8 8 Features 5 7 6 6 7 5 •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalperformance •175°Crated •N-channel •Pb-freeleadplating:RoHScompliant •Halogen-freeaccordingtoEC61249-2-21 8 Pin 1 4 2 3 3 4 2 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V Gate Pin 4 *1 Source Pin 1-3 *1: Internal body diode RDS(on),max 1.15 mΩ ID 288 A Qoss 103 nC QG(0V..4.5V) 63 nC Type/OrderingCode Package Marking RelatedLinks ISC011N06LM5 PG-TDSON-8 FL 011N06L - Final Data Sheet 1 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 288 204 37 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) - 1152 A TC=25°C - - 570 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 188 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.6 0.8 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.3 V VDS=VGS,ID=116µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.85 1.1 1.15 1.45 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance RG - 1.9 - Ω - Transconductance gfs - 230 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 8500 11000 pF VGS=0V,VDS=30V,f=1MHz Coss - 1700 2300 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 68 90 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 7 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 10 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 78 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 32 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 21 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 14 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 18 - nC VDD=30V,ID=50A,VGS=0to4.5V Switching charge Qsw - 25 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge total Qg - 63 84 nC VDD=30V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=30V,ID=50A,VGS=0to4.5V Gate charge total1) Qg - 127 170 nC VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 118 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 103 - nC VDS=30V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 153 A TC=25°C - 1152 A TC=25°C - 0.80 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 56 - ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 73 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 300 250 160 200 ID[A] Ptot[W] 120 150 80 100 40 0 50 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 103 10 µs 1 ms 100 100 µs ID[A] ZthJC[K/W] 102 101 10 ms 100 10-1 10-1 DC 100 101 102 10-2 10-5 10-4 VDS[V] 10-3 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 175 101 10 10-1 150 TC[°C] ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 3.0 10 V 4.5 V 5V 1000 2.6 3V 4V 2.8 V 2.2 RDS(on)[mΩ] ID[A] 800 600 3.5 V 400 1.8 3.5 V 1.4 4V 4.5 V 3V 200 1.0 5V 2.8 V 0 0 1 2 3 10 V 4 0.6 5 0 50 100 150 VDS[V] 200 250 300 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1200 3.4 3.0 1000 25 °C 2.6 175 °C RDS(on)[mΩ] ID[A] 800 600 2.2 1.8 175 °C 400 1.4 200 1.0 25 °C 0 0 1 2 3 4 5 VGS[V] 0 4 8 12 16 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.6 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.25 2.00 1.75 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 1.2 1.50 1160 µA 1.25 116 µA 1.00 0.8 0.75 0.4 -75 -50 -25 0 25 50 75 100 125 150 0.50 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 25 °C, max 175 °C 175 °C, max 104 Ciss IF[A] C[pF] 102 Coss 103 101 102 Crss 101 0 10 20 30 40 50 60 100 0.2 0.4 VDS[V] 0.8 1.0 1.2 1.4 1.6 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.6 IF=f(VSD);parameter:Tj 8 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 25 °C 6 VGS[V] IAV[A] 100 °C 101 4 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 140 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A A1 b c D D1 D2 D3 E E1 E2 e L L1 aaa PG-TDSON-8-U04 MILLIMETERS MIN. MAX. 0.90 1.20 0 0.05 0.26 0.54 0.15 0.35 4.80 5.35 3.70 4.40 2.94 3.25 5.05 5.38 5.70 6.10 3.43 3.76 0.69 0.89 1.27 0.45 0.66 0.69 0.90 0.10 0.25 Figure1OutlinePG-TDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.2,2022-09-23 OptiMOSTM5Power-Transistor,60V ISC011N06LM5 RevisionHistory ISC011N06LM5 Revision:2022-09-23,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-03-12 Release of final version 2.1 2021-07-02 Update max Rdson 2.2 2022-09-23 Update package outline drawing and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.2,2022-09-23