ISC012N04LM6ATMA1

ISC012N04LM6 MOSFET OptiMOSTM6Power-Transistor,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated 1 2 7 6 5 5 3 6 4 4 3 2 Drain Pin 5-8 FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 4 Table1KeyPerformanceParameters Value Unit VDS 40 V RDS(on),max 1.2 mΩ ID 238 A Qoss 56 nC QG 25 nC Package ISC012N04LM6 PG-TDSON-8 FL Final Data Sheet *1 Source Pin 1-3 *1: Internal body diode Type/OrderingCode 1 8 1 Productvalidation Parameter 7 Marking RelatedLinks 12N04LM6 - Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 238 168 141 37 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) - 952 A TA=25°C - - 219 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 125 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Thermal resistance, junction - case, top Values Min. Typ. Max. RthJC - - 1.2 °C/W - RthJC - - 20 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2.3 V VDS=VGS,ID=250µA - 0.1 10 1.0 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 1.4 1.2 1.7 mΩ VGS=10V,ID=50A VGS=4.5V,ID=50A Gate resistance RG - 0.75 - Ω - Transconductance gfs - 230 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 3500 4600 pF VGS=0V,VDS=20V,f=1MHz Coss - 1200 1600 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 31 54 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 8 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 18 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 9.6 - nC VDD=20V,ID=50A,VGS=0to10V Qg(th) - 5.6 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 6.3 9.5 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 10.3 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 51 64 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.7 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 25 33 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 21 - nC VDS=0.1V,VGS=0to4.5V Qoss - 56 74 nC VDS=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 117 A TC=25°C - 952 A TC=25°C - 0.81 1.0 V VGS=0V,IF=50A,Tj=25°C - 73 - nC VR=20V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 250 120 200 150 80 ID[A] Ptot[W] 100 60 100 40 50 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 103 1 µs 10 µs 102 100 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10 ms 100 10-1 DC 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 Diagram5:Typ.outputcharacteristics 1000 Diagram6:Typ.drain-sourceonresistance 3.2 10 V 3.5 V 3V 4.5 V 5V 2.8 800 2.4 4V 2.0 ID[A] RDS(on)[mΩ] 600 400 3.5 V 4V 1.6 4.5 V 5V 1.2 10 V 0.8 200 0.4 3V 2.8 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 100 200 VDS[V] 300 400 500 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1000 3.2 2.8 800 2.4 25 °C 175 °C 2.0 ID[A] RDS(on)[mΩ] 600 400 175 °C 1.6 1.2 25 °C 0.8 200 0.4 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.4 2.0 1.6 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 1.2 2500 µA 0.8 0.4 250 µA 0.4 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 5 10 15 20 25 30 35 40 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8V 20 V 32 V 8 25 °C VGS[V] IAV[A] 6 101 100 °C 4 2 150 °C 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 44 43 VBR(DSS)[V] 42 41 40 39 38 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 04 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.00 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 3mm 2 EUROPEAN PROJECTION ISSUE DATE 05.11.2019 Figure1OutlinePG-TDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.1,2021-08-05 OptiMOSTM6Power-Transistor,40V ISC012N04LM6 PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 2 Final Data Sheet Outline Boardpads (TDSON-8 FL) 11 Rev.2.1,2021-08-05 OptiMOS TM 6 Power-Transistor , 40 V ISC012N04LM6 Revision History ISC012N04LM6 Revision: 2021-08-05, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-04-21 Release of final version 2.1 2021-08-05 Marking correction Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 Rev. 2.1, 2021-08-05