ISC015N04NM5
MOSFET
OptiMOSTM5Power-Transistor,40V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Batterypoweredapplication
•LVmotordrives
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
1
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.5
mΩ
ID
206
A
Qoss
54
nC
QG(0V..10V)
51
nC
Package
ISC015N04NM5
TDSON-8 FL
Final Data Sheet
Marking
15N04NM5
1
6
5
5
3
4
4
Productvalidation
Type/OrderingCode
2
7
3
2
6
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
206
145
188
133
33
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=7V,TC=25°C
VGS=7V,TC=100°C
VGS=10V,TA=25°C,
RTHJA=50°C/W2)
-
824
A
TC=25°C
-
-
220
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
115
3.0
W
TC=25°C
TA=25°C,RTHJA=50°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1.3
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area
RthJA
-
-
50
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental
conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
3.4
V
VDS=VGS,ID=60µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.2
1.4
1.5
1.8
mΩ
VGS=10V,ID=50A
VGS=7V,ID=50A
Gate resistance
RG
-
0.9
1.3
Ω
-
Transconductance
gfs
-
210
-
S
|VDS|≥2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
3700
4800
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
1690
2200
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
130
230
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Rise time
tr
-
5
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
20
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Fall time
tf
-
6
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
16
-
nC
VDD=20V,ID=50A,VGS=0to10V
Qg(th)
-
11
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
9
14
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
15
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
51
67
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.2
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
46
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
54
-
nC
VDD=20V,VGS=0V
1)
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
115
A
TC=25°C
-
824
A
TC=25°C
-
0.84
1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
21
-
ns
VR=20V,IF=50A,diF/dt=100A/µs
Qrr
-
59
-
nC
VR=20V,IF=50A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
4Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
120
240
100
200
80
160
ID[A]
Ptot[W]
Diagram1:Powerdissipation
60
120
40
80
20
40
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
10 µs
10
200
101
10
2
175
TC[°C]
10 ms
100 µs
100
101
ZthJC[K/W]
ID[A]
1 ms
DC
0
10
10-1
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
4.0
4.5 V
10 V
350
3.5
7V
300
3.0
5V
5V
2.5
RDS(on)[mΩ]
ID[A]
250
200
150
4.5 V
100
2.0
1.5
7V
10 V
1.0
50
0.5
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
25
50
75
VDS[V]
100
125
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
320
4.0
280
3.5
240
3.0
200
2.5
RDS(on)[mΩ]
ID[A]
150
175
200
ID[A]
160
120
175 °C
2.0
1.5
25 °C
80
1.0
40
0
0.5
175 °C
0
1
2
3
25 °C
4
5
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0.0
RDS(on)=f(VGS),ID=50A;parameter:Tj
7
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
3.5
3.0
2.5
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
2.0
600 µA
1.5
1.0
60 µA
0.4
0.5
0.0
-80
-40
0
40
80
120
160
0.0
-80
200
-40
0
40
Tj[°C]
80
120
160
200
Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
Coss
102
IF[A]
C[pF]
103
102
101
Crss
101
0
5
10
15
20
25
30
35
40
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8V
20 V
32 V
8
6
VGS[V]
IAV[A]
25 °C
101
100 °C
4
2
150 °C
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
45
44
43
VBR(DSS)[V]
42
41
40
39
38
37
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
5PackageOutlines
Figure1OutlineTDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.1,2020-03-22
OptiMOSTM5Power-Transistor,40V
ISC015N04NM5
RevisionHistory
ISC015N04NM5
Revision:2020-03-22,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2020-01-22
Release of final version
2.1
2020-03-22
Update condition Id pulse, Features and footnotes
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Final Data Sheet
11
Rev.2.1,2020-03-22