ISC022N10NM6ATMA1

ISC022N10NM6 MOSFET OptiMOSTM6Power-Transistor,100V PG-TSON-8-3 8 7 Features 5 6 6 7 5 •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Pin 1 2 4 3 4 3 2 1 Drain Pin 5-8 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 4 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.24 mΩ ID 230 A Qoss 135 nC QG(0V...10V) 73 nC Qrr(100A/µs) 70 nC *1 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package Marking RelatedLinks ISC022N10NM6 PG-TSON-8-3 022N1N6 - Final Data Sheet 8 1 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 230 163 147 25 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=8V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) - 920 A TA=25°C - - 50 A TC=25°C EAS - - 1535 mJ ID=21A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 254 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Thermal resistance, junction - case, top Values Min. Typ. Max. RthJC - 0.29 0.59 °C/W - RthJC - - 20 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=147µA - 0.1 10 1.0 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C1) IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.8 2.2 2.24 2.7 mΩ VGS=10V,ID=50A VGS=8V,ID=25A Gate resistance RG 0.7 1.4 2.1 Ω - Transconductance gfs 48.5 97 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 5400 6880 pF VGS=0V,VDS=50V,f=1MHz Coss - 1200 1500 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 19 28 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=50V,VGS=10V,ID=25A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=50V,VGS=10V,ID=25A, RG,ext=1.6Ω Turn-off delay time td(off) - 30 - ns VDD=50V,VGS=10V,ID=25A, RG,ext=1.6Ω Fall time tf - 7 - ns VDD=50V,VGS=10V,ID=25A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold1) Values Min. Typ. Max. Qgs - 24 32 nC VDD=50V,ID=25A,VGS=0to10V Qg(th) - 15.1 19 nC VDD=50V,ID=25A,VGS=0to10V Gate to drain charge Qgd - 11.9 18 nC VDD=50V,ID=25A,VGS=0to10V Switching charge Qsw - 21 - nC VDD=50V,ID=25A,VGS=0to10V Gate charge total Qg - 73 91 nC VDD=50V,ID=25A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=25A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 67 - nC VDS=0.1V,VGS=0to10V Qoss - 135 169 nC VDS=50V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 212 A TC=25°C - 920 A TC=25°C - 0.80 1.0 V VGS=0V,IF=50A,Tj=25°C trr - 52 78 ns VR=50V,IF=25A,diF/dt=100A/µs Qrr - 70 105 nC VR=50V,IF=25A,diF/dt=100A/µs trr - 28 42 ns VR=50V,IF=25A,diF/dt=1000A/µs Qrr - 325 488 nC VR=50V,IF=25A,diF/dt=1000A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 280 240 240 200 200 160 ID[A] Ptot[W] 160 120 120 80 80 40 40 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 103 1 µs 10 µs 102 100 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10 ms 100 10-1 DC 10-1 10-2 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 Diagram5:Typ.outputcharacteristics 1000 Diagram6:Typ.drain-sourceonresistance 6 10 V 7V 6V 5 800 4 8V ID[A] 7V 400 RDS(on)[mΩ] 8V 600 3 10 V 2 6V 200 0 1 5V 4.5 V 0 1 2 3 4 0 5 0 100 200 VDS[V] 300 400 500 9 10 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 500 6 5 400 175 °C 4 ID[A] RDS(on)[mΩ] 300 200 3 2 100 25 °C 1 175 °C 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 5 6 7 8 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 3.6 3.2 2.0 1.6 2.4 VGS(th)[V] RDS(on)(normalizedto25°C) 2.8 1.2 0.8 1470 µA 2.0 147 µA 1.6 1.2 0.8 0.4 0.4 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 101 Crss 100 0 20 40 60 80 100 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 25 °C VGS[V] IAV[A] 6 100 °C 101 4 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=25Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 112 110 108 VBR(DSS)[V] 106 104 102 100 98 96 94 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=10mA Final Data Sheet 9 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlinePG-TSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2021-07-05 OptiMOSTM6Power-Transistor,100V ISC022N10NM6 RevisionHistory ISC022N10NM6 Revision:2021-07-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-07-05 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2021-07-05