ISC026N03L5SATMA1

ISC026N03L5S MOSFET OptiMOSTMPower-MOSFET,30V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 2.6 mΩ ID 100 A QOSS 16 nC QG(0V..10V) 26 nC Type/OrderingCode Package ISC026N03L5S PG-TDSON-8 Final Data Sheet Marking 026N03L5 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 67 91 58 24 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 40 mJ ID=40A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 48 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 2.6 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.8 2.2 3.5 2.6 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 0.9 - Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1700 - pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 600 - pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 88 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 4.2 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 5.2 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 21 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3.6 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4.4 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 2.7 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 4.0 - nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 5.6 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 13 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 26 - nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 11 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 16 - nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 44 A TC=25°C - 175 A TC=25°C - 0.83 1 V VGS=0V,IF=30A,Tj=25°C - 15 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 60 120 50 100 40 80 ID[A] Ptot[W] Diagram1:Powerdissipation 30 60 20 40 10 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 µs 0.5 100 ID[A] 10 ms 101 0.2 ZthJC[K/W] 1 ms DC 0.1 0.05 10-1 0.02 0.01 100 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 4.0 10 V 5V 8V 3.5 4.5 V 300 3.0 4.5 V 5V RDS(on)[mΩ] ID[A] 2.5 200 3.3 V 100 8V 10 V 2.0 1.5 1.0 0.5 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 200 320 150 ID[A] gfs[S] 240 100 160 50 80 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4.0 2.5 3.5 2.0 3.0 1.5 typ VGS(th)[V] RDS(on)[mΩ] 2.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C Ciss 102 103 IF[A] C[pF] Coss 102 101 Crss 100 101 0 5 10 15 20 25 30 10-1 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 °C 8 VGS[V] IAV[A] 100 °C 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2020-02-25 OptiMOSTMPower-MOSFET,30V ISC026N03L5S PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.0,2020-02-25 OptiMOS TM Power-MOSFET , 30 V ISC026N03L5S Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.0, 2020-02-25 OptiMOS TM Power-MOSFET , 30 V ISC026N03L5S Revision History ISC026N03L5S Revision: 2020-02-25, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-02-25 Release of final version Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.0, 2020-02-25