ISC058N04NM5ATMA1

ISC058N04NM5 MOSFET OptiMOSTM5Power-Transistor,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Batterypoweredapplication •LVmotordrives •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated 1 FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 5.8 mΩ ID 63 A Qoss 13 nC QG(0V..10V) 12 nC Package ISC058N04NM5 TDSON-8 FL Final Data Sheet Marking 58N04NM5 1 6 5 5 3 4 4 Productvalidation Type/OrderingCode 2 7 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 63 44 56 40 17 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=7V,TC=25°C VGS=7V,TC=100°C VGS=10V,TA=25°C, RTHJA=50°C/W2) - 252 A TC=25°C - - 30 mJ ID=25A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 42 3.0 W TC=25°C TA=25°C,RTHJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 3.6 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 3.4 V VDS=VGS,ID=13µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.5 5.2 5.8 7.2 mΩ VGS=10V,ID=31A VGS=7V,ID=31A Gate resistance RG - 2.0 2.9 Ω - Transconductance gfs - 83 - S |VDS|≥2|ID|RDS(on)max,ID=31A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 870 1100 pF VGS=0V,VDS=20V,f=1MHz Coss - 310 400 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 30 52 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 2 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 8 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 2 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4 - nC VDD=20V,ID=31A,VGS=0to10V Qg(th) - 2 - nC VDD=20V,ID=31A,VGS=0to10V Gate to drain charge Qgd - 2 3 nC VDD=20V,ID=31A,VGS=0to10V Switching charge Qsw - 4 - nC VDD=20V,ID=31A,VGS=0to10V Gate charge total Qg - 12 16 nC VDD=20V,ID=31A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=20V,ID=31A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 11 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 13 - nC VDD=20V,VGS=0V 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 42 A TC=25°C - 252 A TC=25°C - 0.89 1 V VGS=0V,IF=31A,Tj=25°C trr - 30 - ns VR=20V,IF=50A,diF/dt=100A/µs Qrr - 24 - nC VR=20V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 70 60 40 50 30 ID[A] Ptot[W] 40 30 20 20 10 10 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 2 10 10 µs 100 µs ZthJC[K/W] 101 ID[A] 1 ms 10 ms 100 100 DC 10-1 10-2 10-1 100 101 102 10-1 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 250 14 4.5 V 10 V 7 V 12 5V 200 10 ID[A] RDS(on)[mΩ] 150 100 8 6 7V 10 V 4 5V 50 2 4.5 V 0 4V 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 25 50 VDS[V] 75 100 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 80 14 70 12 60 10 RDS(on)[mΩ] 50 ID[A] 125 ID[A] 40 30 175 °C 8 6 25 °C 4 20 175 °C 25 °C 2 10 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=31A;parameter:Tj 7 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.5 3.0 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 130 µA 1.5 1.0 13 µA 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=31A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max 103 102 IF[A] C[pF] Ciss Coss 102 101 101 Crss 0 5 10 15 20 25 30 35 40 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8V 20 V 32 V 8 101 25 °C IAV[A] VGS[V] 6 4 100 °C 0 10 2 150 °C 10-1 100 101 102 103 tAV[µs] 0 0.0 2.5 5.0 7.5 10.0 12.5 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=31Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 44 43 VBR(DSS)[V] 42 41 40 39 38 37 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 5PackageOutlines Figure1OutlineTDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-03-23 OptiMOSTM5Power-Transistor,40V ISC058N04NM5 RevisionHistory ISC058N04NM5 Revision:2020-03-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-01-30 Release of final version 2.1 2020-03-23 Update condition Id pulse, Features and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-03-23